2SD2406
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2406
Power Amplifier Applications
Unit: mm • • High power dissipation: PC = 25 W (Tc = 25°C) Good hFE linearity
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 4 0.4 25 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10R1A temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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2SD2406
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 80 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 IE = 10 mA, IC = 0 VCE = 5 V, IC = 0.5 A VCE = 5 V, IC = 3 A IC = 3 A, IB = 0.3 A VCE = 5 V, IC = 3 A VCE = 5 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 80 5 70 15 ― ― ― ― Typ. ― ― ― ― ― 50 0.45 1.0 8.0 90 Max 30 100 ― ― 240 ― 1.5 1.5 ― ― V V MHz pF Unit μA μA V V
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
D2406
Part No. (or abbreviation code) Lot No.
Characteristics indicator
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SD2406
IC – VCE
4.0 240 200 160 120 100 4.0
IC – VBE
Common emitter VCE = 5 V 3.0
(A)
60 2.4 40 1.6
Collector current IC
Collector current IC
(A)
3.2
80
Tc = 75°C 2.0
25
−25
IB = 20 mA
1.0
0.8 Common emitter Tc = 25°C 0 0 1.0 2.0 3.0 4.0 5.0 6.0
0 0
0.4
0.8
1.2
1.6
2.0
Collector-emitter voltage
VCE (V)
Base-emitter voltage
VBE (V)
hFE – IC
1000
VCE (sat) – IC
Collector-emitter saturation voltage VCE (sat) (V)
Common emitter VCE = 5 V 3 Common emitter IC/IB = 10
DC current gain hFE
500 300 Tc = 75°C 100 50 30 25 −25
1 0.5 0.3
Tc = 75°C −25 25
0.1 0.05 0.03 0.003 0.01 0.03 0.1 0.3
10 0.003
0.01
0.03
0.1
0.3
1
3
5
1
3
5
Collector current IC
(A)
Collector current IC
(A)
Safe Operating Area PC – Ta
35
(W)
(A)
30 25 20 15 10 5 0 0
Tc = Ta Infinite heat sink
10 IC max (pulsed)* 1 ms* 5 3 DC operation Tc = 25°C 1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) 1 s* 10 ms* 100 ms*
PC
Collector power dissipation
Collector current IC
VCE max 30 100
25
50
75
100
125
150
175
0.1 1
3
10
Ambient temperature Ta (°C)
Collector-emitter voltage
VCE (V)
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2SD2406
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-21
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