2SJ343

2SJ343

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    2SJ343 - High Speed Switching Applications - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
2SJ343 数据手册
2SJ343 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ343 High Speed Switching Applications Analog Switch Applications • • • • • Low threshold voltage: Vth = −0.8~−2.5 V High speed Enhancement-mode Small package Complementary to 2SK1826 Unit: mm Marking Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) JEDEC Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating −50 −7 −50 200 150 −55~150 Unit V V mA mW °C °C TO-236MOD SC-59 2-3F1F JEITA TOSHIBA Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshould voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = −7 V, VDS = 0 ID = −100 μA, VGS = 0 VDS = −50 V, VGS = 0 VDS = −5 V, ID = −0.1 mA VDS = −5 V, ID = −10 mA ID = −10 mA, VGS = −4 V VDS = −5 V, VGS = 0, f = 1 MHz VDS = −5 V, VGS = 0, f = 1 MHz VDS = −5 V, VGS = 0, f = 1 MHz VDD = −5 V, ID = −10 mA, VGS = 0~−4 V Min ⎯ −50 ⎯ −0.8 15 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 20 10.5 1.9 7.2 0.15 0.13 Max −1 ⎯ −1 −2.5 ⎯ 50 ⎯ ⎯ ⎯ ⎯ ⎯ Unit μA V μA V mS Ω pF pF pF μs 1 2007-11-01 2SJ343 Switching Time Test Circuit 2 2007-11-01 2SJ343 3 2007-11-01 2SJ343 4 2007-11-01 2SJ343 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01
2SJ343
1. 物料型号: - 型号:2SJ343 - 制造商:TOSHIBA - 类型:Field Effect Transistor, Silicon P Channel MOS Type(场效应晶体管,硅P沟道MOS类型)

2. 器件简介: - 2SJ343是一款P沟道MOS场效应晶体管,具有低阈值电压(Vth = -0.8~-2.5V)、高速开关特性,并且是增强模式。它体积小,与2SK1826互补。

3. 引脚分配: - 封装类型包括JEDEC的TO-236MOD、JEITA的SC-59以及TOSHIBA的2-3F1F。

4. 参数特性: - 绝对最大额定值(Ta = 25°C): - 漏源电压(Vps):-50V - 栅源电压(VGSS):-7V - 直流漏电流(ID):-50mA - 漏功耗散(PD):200mW - 沟道温度(Tch):150℃ - 存储温度范围(Tstg):-55~150℃

5. 功能详解: - 2SJ343适用于模拟开关应用和高速开关应用。它具有低阈值电压和高速特性,使其适合于需要快速响应的应用场合。

6. 应用信息: - 该产品适用于一般电子应用,如计算机、个人设备、办公设备、测量设备、工业机器人、家用电器等。不适用于需要极高质量和/或可靠性的设备,或其故障可能导致人员伤亡的设备(如原子能控制仪器、飞机或宇宙飞船仪器等)。

7. 封装信息: - 重量:0.012g(典型值) - 封装类型:S-MINI
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