2SJ377_05

2SJ377 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV) 2 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON-resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0.16 Ω (typ.) : |Yfs| = 4.0 S (typ.) Unit: mm : IDSS = −100 µA (max) (VDS = −60 V) : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −60 −60 ±20 −5 −20 20 273 −5 2 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-64 2-7B1B Weight: 0.36 g (typ.) Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.25 125 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. JEDEC JEITA TOSHIBA ― SC-64 2-7J1B Weight: 0.36 g (typ.) 1 2005-03-04 2SJ377 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −60 V, VGS = 0 V ID = −10 mA, VGS = 0 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −2.5 A VGS = −10 V, ID = −2.5 A VDS = −10 V, ID = −2.5 A Min — — −60 −0.8 — — 2.0 — — — — Typ. — — — — 0.24 0.16 4.0 630 95 290 25 Max ±10 −100 — −2.0 0.28 0.19 — — — — — pF Unit µA µA V V Ω S Turn−on time Switching time Fall time ton — 45 — ns tf — 55 — Turn−off time Total gate charge (Gate−source plus gate−drain) Gate−source charge Gate−drain (“Miller”) charge toff Qg Qgs Qgd VDD ≈ −48 V, VGS = −10 V, ID = −5 A — — — — 200 22 16 6 — — — — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = −5 A, VGS = 0 V IDR = −5 A, VGS = 0 V dlDR / dt = 50 A / µS Min — — — — — Typ. — — — 80 0.1 Max −5 −20 1.7 — — Unit A A V ns µC Marking J377 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-03-04 2SJ377 3 2005-03-04 2SJ377 4 2005-03-04 2SJ377 5 2005-03-04 2SJ377 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2005-03-04