2SJ412

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications • • • • • 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −100 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −100 −100 ±20 −16 −64 60 292 −16 6 150 −55 to 150 Unit V V V A W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― ― 2-10S1B Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics JEDEC Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.08 83.3 Unit °C/W °C/W ― ― 2-10S2B JEITA TOSHIBA Weight: 1.5 g (typ.) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 1.84 mH, RG = 25 Ω, IAR = −16 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SJ412 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Gate-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS −10 V 50 Ω 0V ID = − 8 A RL = 6.25 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −100 V, VGS = 0 V ID = −10 mA, VGS = 0 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −6 A VGS = −10 V, ID = −6 A VDS = −10 V, ID = −6 A Min ― ― −100 −0.8 ― ― 4.5 ― ― ― ― VOUT ― 30 ― ns ― 18 ― Typ. ― ― ― ― 0.25 0.15 7.7 1100 210 440 18 Max ±10 −100 ― −2.0 0.32 0.21 ― ― ― ― ― Unit μA μA V V Ω S pF pF pF Turn-on time Switching time Fall time ton tf VDD ≈ −50 V Duty ≤ 1%, tw = 10 μs ― 65 ― Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge toff Qg Qgs Qgd VDD ≈ −80 V, VGS = −10 V, ID = −16 A ― ― ― 48 29 19 ― ― ― nC nC nC Source-Drain Rating and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR Test Condition ― Min ― Typ. ― Max −16 Unit A IDRP VDSF trr Qrr ― IDR = −16 A, VGS = 0 V IDR = −16 A, VGS = 0 V dIDR/dt = 50 A/μs ― ― ― ― ― ― 160 0.5 −64 1.7 ― ― A V ns μC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Part No. (or abbreviation code) Lot No. Note 4 J412 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SJ412 ID – VDS −5 −4 −4 −8 −3 −16 −20 −8 ID – VDS Common source Tc = 25°C Pulse test −6 −4.0 −10 −12 −3.5 −8 −3 −4 VGS = −2 V Drain current ID (A) −3 Common source Tc = 25°C Pulse test −2.5 −2 −1 Drain current ID (A) −10 −6 −2.5 VGS = −2 V 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 0 0 −2 −4 −6 −8 −10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −10 Common source VDS = −10 V Pulse test 25 Tc = −55°C −6 100 −3.2 VDS – VGS Common source Tc = 25°C Pulse test −8 Drain current ID (A) VDS (V) Drain-source voltage −2.4 −4 −1.6 ID = −8 A −2 −0.8 −4 −2 0 0 −1 −2 −3 −4 −5 −6 0 0 −4 −8 −12 −16 −20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID |Yfs| (S) 30 Common source VDS = −10 V Pulse test 10 2.0 1.0 0.5 0.3 Common source Tc = 25°C Pulse test RDS (ON) – ID Forward transfer admittance Tc = −55°C Drain-source on resistance RDS (ON) (Ω) 5 3 100 25 VGS = −4 V −10 0.1 0.05 1 −0.3 −1.0 −3 −10 −20 0.03 −0.1 −0.3 −1.0 −3 −10 −20 Drain current ID (A) Drain current ID (A) 3 2009-09-29 2SJ412 RDS (ON) – Tc (Ω) 0.5 Common source Pulse test 0.4 −4 −30 Common source Tc = 25°C IDR – VDS Drain-source on resistance RDS (ON) (A) ID = −8 A −8 Pulse test −10 Drain reverse current IDR 0.3 −2, −4 0.2 VGS = −4 V −2 −5 −3 VGS = −10 V −3 −1.0 −5 −1 0.2 0.4 −2 0.1 VGS = −10 V 0 −80 −0.5 0 40 80 120 160 −0.3 0 0, 1 0.6 0.8 1.0 −40 Case temperature Tc (°C) Drain-source voltage VDS (V) Capacitance – VDS 5000 3000 Ciss −4 Vth – Tc Common source VDS = −10 V ID = −1 mA Pulse test Vth (V) Gate threshold voltage −100 (pF) 1000 500 300 Common source 100 50 30 −0.1 VGS = 0 V f = 1 MHz Tc = 25°C −0.3 −1 −3 −10 −3 Capacitance C Coss −2 Crss −1 −30 Drain-source voltage VDS (V) 0 −80 −40 0 40 80 120 160 Case temperature Tc (°C) PD – Tc 80 −100 Dynamic Input/Output Characteristic Common source ID = −16 A Tc = 25°C Pulse test −20 Drain power dissipation PD (W) VDS (V) −80 −16 60 Drain-source voltage 40 −20 V −40 −40 V −8 20 −20 VGS 0 0 −4 0 0 40 80 120 160 20 40 60 80 0 100 Case temperature Tc (°C) Total gate charge Qg (nC) 4 2009-09-29 Gate-source voltage −60 VDS VDD = −80 V −12 VGS (V) 2SJ412 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.01 0.01 10 μ Single pulse 100 μ 1m 10 m 100 m 0.05 0.02 PDM t T Duty = t/T Rth (ch-c) = 2.08°C/W 1 10 Pulse width tw (s) Safe Operating Area −300 500 EAS – Tch IC max (pulsed)* 100 μs* ID max (continuous) 1 ms* 10 ms* Avalanche energy EAS (mJ) −100 −50 400 Drain current ID (A) −30 300 −10 −5 −3 DC operation Tc = 25°C 200 100 −1 *: Single nonrepetitive pulse Tc = 25°C −0.3 Curves must be derated linearly with increase in temperature. −0.5 −0.1 −0.3 −1 −3 −10 0 25 VDSS max −30 −100 −300 50 75 100 125 150 Channel temperature Tch (°C) Drain-source voltage VDS (V) 15 V −15 V BVDSS IAR VDD VDS TEST CIRCUIT RG = 25 Ω VDD = −25 V, L = 1.84 mH WAVE FORM ⎞ 1 2⎛ B VDSS ⎟ Ε AS = ·L·I · ⎜ ⎜B 2 − VDD ⎟ ⎝ VDSS ⎠ 5 2009-09-29 2SJ412 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29