2SJ508

2SJ508 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSV) 2 2SJ508 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance High forward transfer admittance Enhancement mode : RDS (ON) = 1.34 Ω (typ.) : |Yfs| = 0.7 S (typ.) Low leakage current : IDSS = −100 μA(max) (VDS = −100 V) : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current Drain power dissipation Drain power dissipation (Note 2) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range Note: DC (Note 1) Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −100 −100 ±20 −1 −3 0.5 1.5 136.5 −1 0.05 150 −55~150 Unit V V V A A W W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― ― 2−5K1B Weight: 0.05 g (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch−a) Max 250 Unit °C / W Note 1: Note 2: Note 3: Note 4: Ensure that the channel temperature does not exceed 150°C. Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 Ω, IAR = −1 A Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Marking Part No. (or abbreviation code) Z Lot No. E A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2007-01-16 2SJ508 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ −80 V, VGS = −10 V, ID = − 1 A VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −100 V, VGS = 0 V ID = −10 mA, VGS = 0 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −0.5 A VGS = −10 V, ID = −0.5 A VDS = −10 V, ID = −0.5 A Min — — −100 −0.8 — — 0.3 — — — — Typ. — — — — 1.68 1.34 0.7 135 22 48 20 Max ±10 −100 — −2.0 2.5 1.9 — — — — — pF Unit μA μA V V Ω S Turn−on time Switching time Fall time — 32 — ns — 25 — Turn−off time Total gate charge (Gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) charge — — — — 130 6.3 4.1 2.2 — — — — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = −1 A, VGS = 0 V IDR = −1 A, VGS = 0 V dIDR / dt = 50 A / μs Min — — — — — Typ. — — — 90 180 Max −1 −3 1.5 — — Unit A A V ns nC 2 2007-01-16 2SJ508 ID – VDS −1.0 −8 −0.8 −10 −3.2 −3 −2.0 −10 −8 −1.6 ID – VDS −4 (A) (A) −6 −5 −2.8 −5 −4.5 −3.6 Common source Ta = 25°C Pulse test ID −0.6 ID Drain current −1.2 Drain current −0.4 −2.5 Common source Ta = 25°C Pulse test −0.8 −3 −0.2 VGS = −2.1V −0.4 −2.5 VGS = −2.1 V 0 0 −1 −2 −3 −4 −5 0 0 −2 −4 −6 −8 −10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −2.0 Common source VDS = −10 V Pulse test −3.0 VDS – VGS Common source Ta = 25°C Pulse test (V) VDS Drain-source voltage 100 Ta = −55°C −1.6 −2.5 ID (A) 25 −1.2 −2.0 I D = −1 A Drain current −1.5 −0.5 −0.2 −0.8 −1.0 −0.4 −0.5 0 0 −1 −2 −3 −4 −5 0 0 −4 −8 −12 −16 −20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 10 10 RDS (ON) – ID Forward transfer admittance ⎪Yfs⎪ (S) Drain-source ON resistance RDS (ON) (Ω) VGS = −4 V Ta = −55°C 1 100 25 1 −10 Common source VDS = −10 V Pulse test 0.1 −0. 1 −1 −10 Common source Ta = 25°C Pulse test 0.1 −0.01 −0.1 −1 −10 Drain current ID (A) Drain current ID (A) 3 2007-01-16 2SJ508 RDS (ON) − Ta 3.0 −10 Common source Pulse test ID = −0.5A Common source Ta = 25°C Pulse test IDR − VDS Drain-source ON resistance RDS (ON) ( Ω) 2.5 2.0 VGS = −4 V 1.5 −10V Drain reverse current IDR (A) −1 −5 −10 −0.1 −3 1.0 0.5 0 −80 −1 −40 0 40 80 120 160 −0.01 0 0.4 VGS = 0 V 0.8 1.2 1.6 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 Common source VGS = 0 V f = 1 MHz Ta = 25°C 1000 −2.5 Vth − Ta −2.0 (pF) Capacitance C Gate threshold voltage Vth (V) −1.5 Ciss 100 Coss Crss 10 −0.1 −1 −10 −100 −1.0 −0.5 Common source VDS = −10 V ID = −1mA Pulse test −40 0 40 80 120 160 0 −80 Drain-source voltage VDS (V) Ambient temperature Ta (°C) PD − Ta −160 2.0 ①25.4mm×25.4mm×0.8mm Mounted on ceramic substrate ① 1.5 ②Single Dynamic input/output characteristics −16 Common source ID = −1A Ta = 25°C Pulse test VDD = −80V VDS −2 0 V −40V −8 Drain power dissipation PD (W) VDS −120 −12 Drain-source voltage 1.0 −80 0.5 ② VGS −40 −4 0 0 40 80 120 160 200 0 0 2 4 6 8 0 10 Ambient temperature Ta (°C) Total gate charge Qg (nC) 4 2007-01-16 Gate-source voltage VGS (V) (V) 2SJ508 rth − tw 1000 Single pulse Single 15×15×0.8 100 Normalized transient thermal impedance rth (℃/w) 20×20×0.8 10 Mounted on ceramic substrate 40×50×0.8mm 1 1m 10m 100m 1 10 100 1000 Pulse width tw (s) SAFE OPERATING AREA −10 ID max (pulsed) * ID max (continuous) 1ms * 10 ms * 200 EAS – Tch Avalanche energy EAS (mJ) Drain current ID (A) −1 150 100 −0.1 DC operation Ta = 25°C 50 −0.01 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −1 −10 0 25 VDSS max −100 −1000 50 75 100 125 150 Channel temperature Tch (°C) −0. 001 −0.1 Drain-source voltage VDS (V) 15 V −15 V BVDSS IAR VDD VDS TEST CIRCUIT RG=25 Ω VDD = −50 V, L = 168mH WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B 2 − VDD ⎟ ⎝ VDSS ⎠ 5 2007-01-16 2SJ508 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-01-16