2SJ567_09

2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) 2SJ567 Switching Applications 5.2 ± 0.2 1.7 ± 0.2 Chopper Regulator, DC/DC Converter and Motor Drive Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) Enhancement model: Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA) 0.95 MAX. 0.6 ± 0.15 Unit: mm 6.8 MAX. 0.6 MAX. Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −200 −200 ±20 −2.5 −10 20 97.5 −2.5 2.0 150 −55 to 150 Unit V V V A W mJ A mJ °C °C 1.2 MAX. 1 2.3 2.3 2.5 MAX. 2 3 12.0 MIN. 5.5 ± 0.2 0.6 MAX. 1.1 ± 0.2 2 1 1. 2. GATE DRAIN （HEAT SINK） 3. SOURSE 3 JEDEC JEITA TOSHIBA ― SC-64 2-7B1B Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) 5.2 ± 0.2 1.5 ± 0.2 6.5 ± 0.2 0.6 MAX. 5.5 ± 0.2 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 9.5 ± 0.3 1.1 ± 0.2 0.6 MAX. 0.8 MAX. 0.6 ± 0.15 1 2 1.05 MAX. 3 2.3 ± 0.2 Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit °C/W °C/W 0.1 ± 0.1 2.3 ± 0.15 2.3 ± 0.15 2 1 GATE DRAIN （HEAT SINK） 3. SOURSE 1. 2. 3 JEDEC JEITA TOSHIBA ― ― 2-7J1B Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = −25.2 mH, IAR = −2.5 A RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Weight: 0.36 g (typ.) 1 2009-07-13 2SJ567 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton tf toff Qg Qgs Qgd 0V VGS −10 V 50 Ω ID = −1.5 A VOUT VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −200 V, VGS = 0 V ID = −10 mA, VGS = 0 V VDS = −10 V, ID = −1 mA VGS = −10 V, ID = −1.5 A VDS = −10 V, ID = −1.5 A Min ⎯ ⎯ −200 −1.5 ⎯ 1.0 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 1.6 2.0 410 40 145 20 Max ±10 −100 ⎯ −3.5 2.0 ⎯ ⎯ ⎯ pF Unit μA μA V V Ω S ⎯ ⎯ ⎯ RL = 66.7 Ω ⎯ VDD ≈ −100 V ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns Turn-on time Switching time Fall time 45 15 ⎯ ⎯ ⎯ ⎯ ⎯ nC Turn-off time Total gate charge (Gate source plus gate-drain) Gate-source charge Gate-drain (“Miller”) charge Duty ≤ 1%, tw = 10 μs 85 10 6 4 VDD ≈ −160 V, VGS = −10 V, ID = −2.5 A Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = −2.5 A, VGS = 0 V IDR = −2.5 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 135 0.81 Max −2.5 −10 2.0 ⎯ ⎯ Unit A A V ns μC Marking Note 4: A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. J567 Part No. Lot No. Note 4 2 2009-07-13 2SJ567 ID – VDS −2.0 Common source Tc = 25°C Pulse test −15 −10 −4.6 −4 −15 −8 −6 −5 −4.8 −5 −10 −6 −8 ID – VDS Common source Tc = 25°C Pulse test −5.75 −5.5 −5.25 −5 −2 −4.8 −4.6 −4.4 −1 −4.2 VGS = −4 V −10 −20 −30 −40 −50 −1.6 Drain current ID (A) −1.2 Drain current ID (A) −5 −4.4 −4.2 VGS = −4 V −3 −0.8 −0.4 0 0 −1 −2 −3 −4 0 0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −10 Common source −8 VDS = −10 V Pulse test Tc = −55°C −10 VDS – VGS Common source VDS (V) −8 Tc = 25°C Pulse test Drain current ID (A) Drain-source voltage −6 25 −6 −4 100 −4 ID = −2.5 A −1.5 −2 −0.8 −2 0 0 −2 −4 −6 −8 −10 0 0 −4 −8 −12 −16 −20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID 10 Common source 10 Common source Tc = 25°C Pulse test 25 100 VDS = −10 V Pulse test RDS (ON) – ID (S) Forward transfer admittance ⎪Yfs⎪ Drain-source ON-resistance RDS (ON) (Ω) Tc = −55°C VGS = −10 V −15 1 1 0.1 −0.1 −1 −10 0.1 −0.1 −1 −10 Drain current ID (A) Drain current ID (A) 3 2009-07-13 2SJ567 RDS (ON) – Tc 6 Common source VGS = −10 V Pulse test ID = −1.5 A −10 Common source Tc = 25°C Pulse test IDR – VDS Drain-source ON-resistance RDS (ON) (Ω) 4 −1.2 Drain reverse current IDR (A) −1 5 3 −1.0 2 1 −5 0 −80 −40 0 40 80 120 160 −0.1 0 0.2 −3 0.4 −1 0.6 VGS = 0 V 0.8 1 Case temperature Tc (°C) Drain-source voltage VDS (V) Capacitance – VDS 1000 Ciss -5 Vth – Tc Common source Vth (V) -4 VDS = 10 V ID = 1 m A Pulse test (pF) Gate threshold voltage 100 Coss -3 Capacitance C -2 10 Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 −0.1 −1 −10 Crss -1 0 −80 −100 −40 0 40 80 120 160 Case temperature Tc (°C) Drain-source voltage VDS (V) PD – Tc 40 −160 Dynamic input/output characteristics VDS VDS = −40 V −120 −160 −80 −80 −40 VGS −4 −12 Common source ID = −2.5 A Tc = 25°C −8 Pulse test −16 Drain power dissipation PD (W) 20 10 0 0 40 80 120 160 0 0 4 8 12 16 20 Case temperature Tc (°C) Total gate charge Qg (nC) 4 2009-07-13 Gate-source voltage VGS 30 Drain-source voltage VDS (V) (V) 2SJ567 rth – tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 10 μ Duty = 0.5 0.2 0.1 0.05 0.02 Single pulse PDM t 0.01 T Duty = t/T Rth (ch-c) = 6.25°C/W 100 μ 1m 10 m 100 m 1 10 100 Pulse width tw (S) Safe operating area −30 −10 −5 −3 ID max (pulse) * 100 μs* 100 EAS – Tch Avalanche energy EAS (mJ) 80 1 ms* (A) 60 Drain current ID −1 −0.5 −0.3 −0.1 −0.05 −0.03 −0.01 −0.005 −0.1 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.3 −1 −3 −10 −30 −100 −300 VDSS max DC operation 40 20 0 25 50 75 100 125 150 Channel temperature Tch (°C) Drain-source voltage VDS (V) 15 V −15 V BVDSS IAR VDD VDS Waveform Test circuit RG = 25 Ω VDD = −50 V, L = 25.2 mH Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ 5 2009-07-13 2SJ567 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-07-13