2SJ610(TE16L1,NQ)

2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 • High forward transfer admittance: |Yfs| = 18 S (typ.) • Low leakage current: IDSS = −100 μA (VDS = −250 V) • Enhancement mode: Vth = −1.5 to −3.5 V (VDS = 10 V, ID = 1 mA) 5.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.) 1.2 MAX. • Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS −250 V Drain-gate voltage (RGS = 20 kΩ) VDGR −250 V Gate-source voltage VGSS ±20 V (Note 1) ID −2.0 Pulse (t = 1 ms) (Note 1) IDP −4.0 Drain power dissipation PD 20 W Single-pulse avalanche energy (Note 2) EAS 180 mJ Avalanche current IAR −2.0 A Repetitive avalanche energy (Note 3) EAR 2.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current A 1 2 3 2.3 ± 0.2 Rating 0.6 MAX. 1.05 MAX. 0.1 ± 0.1 Symbol DC 1.1 ± 0.2 0.8 MAX. 0.6 ± 0.15 Characteristic 0.6 MAX. 9.5 ± 0.3 5.2 ± 0.2 2.3 ± 0.15 2.3 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURSE 2 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = 75 mH, IAR = −2.0 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2010-02-05 2SJ610 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = −250 V, VGS = 0 V ⎯ ⎯ −100 μA V (BR) DSS ID = −10 mA, VGS = 0 V −250 ⎯ ⎯ V Vth VDS = −10 V, ID = −1 mA −1.5 ⎯ −3.5 V Drain-source ON-resistance RDS (ON) VGS = −10 V, ID = −1.0 A ⎯ 1.85 2.55 Ω Forward transfer admittance ⎪Yfs⎪ VDS = −10 V, ID = −1.0 A 0.5 1.8 ⎯ S Input capacitance Ciss ⎯ 381 ⎯ Reverse transfer capacitance Crss ⎯ 52 ⎯ Output capacitance Coss ⎯ 157 ⎯ ⎯ 5 ⎯ ⎯ 20 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz tr Turn-on time VGS 0V ton tf Turn-off time Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VOUT RL = 100 Ω 50 Ω Switching time Fall time ID = 1.0 A 10 V pF ns ⎯ 6 ⎯ ⎯ 36 ⎯ ⎯ 24 ⎯ ⎯ 11 ⎯ ⎯ 13 ⎯ VDD ≈ 100 V VDD ≈ −200 V, VGS = −10 V, ID = −2.0 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ −2.0 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ −4.0 A (Note 1) Forward voltage (diode) VDSF IDR = −2.0 A, VGS = 0 V ⎯ ⎯ 2.0 V Reverse recovery time trr IDR = −2.0 A, VGS = 0 V, ⎯ 120 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 540 ⎯ nC Marking Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] J610 Part No. Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-02-05 2SJ610 ID – VDS ID – VDS −4 −8 −6 −10 Common source Tc = 25°C, pulse test −5.5 −4.5 −1 VGS = −4 V −0.5 Common source Tc = 25°C, pulse test −6 −15 −8 −5 −15 −1.5 Drain current ID (A) Drain current ID (A) −2 −5.5 −10 −3 −5 −2 −4.5 −1 VGS = −4 V 0 −1 0 −2 −3 Drain-source voltage 0 0 −4 −5 VDS (V) −10 Drain-source voltage ID – VGS VDS (V) −3 Drain-source voltage Drain current ID (A) Common source VDS = −10 V Pulse test −2 25 Tc = −55°C 100 0 0 −1 −2 −3 −4 Gate-source voltage −5 Common source Tc = 25°C Pulse test −8 −6 −2 −4 ID = −1 A −2 0 0 −6 −2 VGS (V) −4 −6 Gate-source voltage ⎪Yfs⎪ – ID −8 −10 VGS (V) RDS (ON) − ID 10 10 Common source Common source VDS = −10 V 5 Pulse test 3 Drain-source ON-resistance RDS (ON) (Ω) (S) VDS (V) −10 −1 −20 VDS – VGS −4 Forward transfer admittance ⎪Yfs⎪ −15 Tc = −55°C 100 25 1 0.5 0.3 0.1 −0.1 −0.3 −0.5 −1 −3 −5 Tc = 25°C 5 VGS = 10 V Pulse test 3 1 0.5 0.3 0.1 −0.01 −10 Drain current ID (A) −0.03 −0.1 −0.3 −1 −3 −10 Drain current ID (A) 3 2010-02-05 2SJ610 IDR – VDS −100 (A) 4 Common source VGS = −10 V Pulse test −2 A 3 Drain reverse current IDR Drain-source ON-resistance RDS (ON) (Ω) RDS (ON) – Tc 5 ID = −1 A 2 1 Common source Tc = 25°C Pulse test −10 −1 VGS = −10 V −5 V 0 −80 −40 0 40 80 Case temperature Tc 120 0.1 0 160 0.2 (°C) −3 V 0.4 1.0 Vth (V) Ciss Coss Gate threshold voltage 100 Crss 10 Common source VGS = 0 V f = 1 MHz Tc = 25°C −0.3 Common source VDS = −10 V ID = −1 mA Pulse test −4 −3 −2 −1 0 −80 −1 −3 −10 Drain-source voltage 1.4 VDS (V) −5 1 −0.1 1.2 Vth – Tc Capacitance – VDS (pF) 0.8 Drain-source voltage 1000 Capacitance C 0, 1 0.6 −30 −40 0 40 80 120 Case temperature Tc −100 160 (°C) VDS (V) PD – Tc Dynamic input/output characteristics −300 40 −30 20 10 −25 Tc = 25°C −200 Pulse test VDS −20 −15 −50 −100 VDD = −200 V −10 −100 −5 VGS (V) ID = −2 A Gate-source voltage VDS (V) 30 Drain-source voltage Drain power dissipation PD (W) Common source VGS 0 0 40 80 120 Case temperature Tc 160 0 0 200 (°C) 5 15 25 35 −0 Total gate charge Qg (nC) 4 2010-02-05 2SJ610 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.05 0.02 Single pulse 0.01 PDM t 0.01 T 0.005 Duty = t/T Rth (ch-c) = 6.25°C/W 0.003 0.001 10 μ 100 μ 1m 10 m 100 m Pulse width tw 1 10 100 (S) Safe operating area EAS – Tch −100 200 Avalanche energy EAS (mJ) −50 −30 Drain current ID (A) −10 −5 ID max (pulsed) * −3 100 μs * 1 ms * DC −1 160 120 80 40 −0.5 −0.3 0 25 50 125 150 * Single nonrepetitive pulse Tc = 25°C −0.0 Curves must be derated linearly 15 V with increase in temperature. −0.0 1 100 Channel temperature (initial) Tch (°C) −0.1 −0.0 75 VDSS max 3 5 10 30 50 Drain-source voltage 100 BVDSS IAR −15 V 300 500 1000 VDD VDS (V) Waveform Test circuit RG = 25 Ω VDD = −50 V, L = 75 mH 5 VDS Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2010-02-05 2SJ610 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2010-02-05