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2SJ618

2SJ618

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    2SJ618 - High-Power Amplifier Applications - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
2SJ618 数据手册
2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSⅤ) 2SJ618 High-Power Amplifier Applications Unit: mm 2.0 4.5 9.0 4.8 MAX. 1.0 • • 15.9 MAX. Ф3.2 ± 0.2 High breakdown voltage: VDSS = −180 V Complementary to 2SK3497 3.3 MAX. 2.0 2.0 ± 0.3 1.0 +0.3 -0.25 5.45 ± 0.2 1.8 MAX. 5.45 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD Tch Tstg Rating −180 ±20 −10 −30 130 150 −55 to 150 Unit V V A A W °C °C +0.3 0.6 -0.1 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC JEITA TOSHIBA Power dissipation (Tc = 25°C) Channel temperature Storage temperature range SC-67 2-16C1B Weight: 4.6 g (typ.) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.96 50 Unit °C / W °C / W 1 2 2.8 1 2 3 ⎯ 3 1 2009-09-29 20.5 ± 0.5 20.0 ± 0.3 2SJ618 Electrical Characteristics (Ta = 25°C) Characteristics Drain cut−off current Gate leakage current Drain-source breakdown voltage Drain-source saturation voltage Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Symbol IDSS IGSS V (BR) DSS VDS (ON) Vth |Yfs| Ciss Coss Crss VDS = −30 V, VGS = 0, f = 1 MHz Test Condition VDS = −180 V, VGS = 0 V VDS = 0, VGS = ±12 V ID = −10 mA, VGS = 0 ID = −5 A, VGS = −7 V VDS = 10 V, ID = 1 mA VDS = −10 V, ID = −5 A Min ⎯ ⎯ −180 ⎯ −1.1 6.0 ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 12.0 2300 330 65 Max −100 ±10 ⎯ −1.85 −2.1 ⎯ ⎯ ⎯ ⎯ pF Unit μA μA V V V S This transistor is the electrostatic-sensitive device. Plese handle with caution. Marking TOSHIBA J618 Part No. (or abbreviation code) Lot No. Note 3 Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SJ618 ID – VDS −20 Common source Tc = 25°C Pulse test −10 −4 −8 −3.5 −12 Common source VDS = −10V Pulse test ID – VGS −16 Drain current ID (A) Drain current ID (A) −6 −8 −3 −4 VGS = −2.5 V 0 0 −2 −4 −6 −8 −10 −4 Tc = 100°C 25 −55 −2 0 0 −1 −2 −3 −4 −5 Drain-source voltage VDS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID 100 Common source VDS = −10 V Pulse test 5 Common source VGS = −7 V Pulse test VDS (ON) – Tc (S) Forward transfer admittance ⎪Yfs⎪ Drain−source saturation voltage VDS (ON) (V) 4 −2.5 −5 10 Tc = −55 °C 100 25 3 ID = −10 A 2 1 1 0.1 −0.1 −1 −10 0 −80 −40 0 40 80 120 160 Drain current ID (A) Case temperature Tc (°C) Capacitance – VDS 10000 150 PD – Tc Ciss Drain power dissipation PD (W) 100 120 (pF) 1000 Coss Capacitance C 90 60 100 Crss Common source VGS = 0 V f = 1 MHZ Tc = 25°C 10 0.1 1 10 30 0 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (°C) 3 2009-09-29 2SJ618 Safe operating area −100 ID MAX. (pulsed) * Drain current ID (A) −10 ID MAX. (continuous) t = 1 m s* DC OPERATION Tc=25℃ −1 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.1 −1 −10 −100 VDSS MAX. −100 Drain-source voltage VDS (V) 4 2009-09-29 2SJ618 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2009-09-29
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