2SJ620
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ620
Switching Regulator and DC-DC Converter Applications Motor Drive Applications
• • • • • 4-V gate drive Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −100 V) Enhancement model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −100 −100 ±20 −18 −72 125 937 −18 12.5 150 −55 to150 Unit V V V A W mJ A mJ °C °C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― SC-97 2-9F1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.0 Unit °C/W
Circuit Configuration
4
1
Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = 3.56 mH, RG = 25 Ω, IAR = −18 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
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2SJ620
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton tf VGS 0V ID = −9 A RL = 5.55 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −100 V, VGS = 0 V ID = −10 mA, VGS = 0 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −9 A VGS = −10 V, ID = −9 A VDS = −10 V, ID = −6 A Min ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 85 63 15 2900 480 1000 25 45 25 Max ±10 Unit μA μA V V mΩ S
−100
⎯
−100 −0.8
⎯ ⎯ 7 ⎯ ⎯ ⎯ ⎯ VOUT ⎯ ⎯
−2.0
120 90 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
pF
−10 V 4.7 Ω
ns
Turn-OFF time
toff
Duty < 1%, tw = 10 μs =
VDD ∼ −50 V −
⎯
170
⎯
Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge
Qg Qgs Qgd VDD ∼ −80 V, VGS = −10 V, ID = −18 A −
⎯ ⎯ ⎯
140 90 50
⎯ ⎯ ⎯ nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = −18 A, VGS = 0 V IDR = −18 A, VGS = 0 V, dIDR/dt = 50 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 220 0.97 Max −18 −72 1.7 ⎯ ⎯ Unit A A V μs μC
Marking
Part No. (or abbreviation code)
J620
Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SJ620
ID – VDS
−20 Common source Tc = 25°C pulse test −50 −8 −6 −10 −4.5 −4 −40 −10 −8 −6 −5 −4.5
ID – VDS
Common source Tc = 25°C pulse test
−16
Drain current ID (A)
Drain current ID (A)
−3.5
−4 −30 −3.5
−12
−3
−8
−20
−4
−2.5
−3 −10 VGS = −2.5 V
VGS = −2 V 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 0 0 −4 −8 −12
−16
−20
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID – VGS
−20 Common source VDS = −10 V pulse test −3.0
VDS – VGS
Common source Tc = 25°C pulse test
−16
Drain current ID (A)
VDS (V) Drain-source voltage
−2.5
−2.0
−12
−1.5 ID = −18 A −1.0 −9 −4.5
−8 25 −4 100 Tc = −55°C
−0.5
0 0
−1
−2
−3
−4
−5
0 0
−2
−4
−6
−8
−10
−12
−14
−16
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
⎪Yfs⎪ − ID
100 0.3 Common source VDS = −10 V
RDS (ON) − ID
Common source Tc = 25°C Pulse test
Forward transfer admittance ⎪Yfs⎪
(S)
50 30
(Ω)
Tc = −55°C
25
Drain-source on resistance
pulse test
0.1
VGS = −4 V −10
100 10
RDS (ON)
0.03 0.01 −1
5 3 2 −1 −3 −5 −10 −30 −50 −100
−3
−10
−30
−100
Drain current ID (A)
Drain current ID (A)
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2SJ620
RDS (ON) − Tc
(Ω)
0.20 Common source pulse test 0.15 −100 −50
IDR − VDS
Common source Tc = 25°C pulse test −10
Drain-source on resistance RDS (ON)
(A) Drain reverse current IDR
−30
−10 −5 −3
−5
0.10 −4.5 VGS = −4 V 0.05 VGS = −10 V ID = −18 A
−9
−1.0 −1
VGS = 0, 1 V
−0.5 40 80 120 160 −0.3 0 0.4 0.8 1.2 1.6 2.0 2.4
0 −80
−40
0
Case temperature
Tc (°C)
Drain-source voltage
VDS (V)
Capacitance – VDS
50000 30000 −4
Vth − Tc
Common source VDS = −10 V ID = −1 mA pulse test
Vth (V)
Ciss
(pF)
10000 5000 3000
−3
Gate threshold voltage
Capacitance C
−2
1000 500 Common source 300 VGS = 0 V f = 1 MHz Tc = 25°C 100 −0.1 −0.3 −1 Coss
−1
Crss −3 −10 −30 −100 0 −80 −40 0 40 80 120 160
Drain-source voltage
VDS (V)
Case temperature Tc (°C)
PD − Tc
200 −200
Dynamic input/output characteristics
Common source ID = −18 A Tc = 25°C pulse test −16
Drain power dissipation PD (W)
VDS (V)
150
−120
VGS
−12
Drain-source voltage
100
−80 VDS −20 −40 −40
VDD = −80 V
−8
50
−4
0 0
40
80
120
160
0 0
40
80
120
160
0 200
Case temperature
Tc (°C)
Total gate charge Qg (nC)
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Gate-source voltage
VGS (V)
2SJ620
rth − tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-a)
3
1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 μ 100 μ 1m 10m 100m Single pulse PDM t T Duty = t/T Rth (ch-c) = 1.0°C/W 1 10
Pulse width
tw
(S)
Safe operating area
−1000 1000
EAS – Tch
Avalanche energy EAS (mJ)
800
−100 ID max (pulsed) *
100 μs *
Drain current ID (A)
600
ID max (continuous) −10 DC operation Tc = 25°C 1 ms *
400
−1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −1 −10
200
−0.1 −0.1
VDSS max −100 −1000
0 25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
Drain-source voltage
VDS (V)
15 V −15 V
BVDSS IAR VDD Test circuit Wave form VDS
RG = 25 Ω VDD = −50 V, L = 3.56 mH
Ε AS =
⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝
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2SJ620
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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