2SJ669

2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range ID IDP Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −60 −60 ±20 −5 −20 1.2 40.5 −5 0.12 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― ― 2-8M1B Weight: 0.54 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to ambient Symbol Rth (ch−a) Max 104 Unit °C / W Note 1: The channel temperature should not exceed 150℃ during use. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 2SJ669 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance tr ton tf toff Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“Miller”) charge Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ −48 V, VGS = −10 V, ID = −5 A Duty ≤ 1%, tw = 10 μs 0V VGS −10 V 4.7 Ω Switching time ID = −2.5 A Output Test Condition VGS = ±16 V, VDS = 0 V VDS = −60 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −2.5 A VGS = −10 V, ID = −2.5 A VDS = −10 V, ID = −2.5 A Min — — −60 −35 −0.8 — — 2.5 — Typ. — — — — — 0.16 0.12 5.0 700 60 90 14 24 Max ±10 −100 — — −2.0 0.25 0.17 — — — — — — Unit μA μA V V V Ω S VDS = −10 V, VGS = 0 V, f = 1 MHz — — — — pF RL = 12 Ω ns — VDD ∼ −30 V − — — — — 14 95 15 11 4 — — — — — nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = −5 A, VGS = 0 V IDR = −5 A, VGS = 0 V dlDR / dt = 50 A / μs Min — — — — — Typ. — — — 40 32 Max −5 −20 1.7 — — Unit A A V ns nC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. J669 Part No. (or abbreviation code) Lot No. Note 4 2 2009-09-29 2SJ669 ID – VDS −5 −8 −10 −6 −4. −3.5 Common source Ta = 25°C Pulse test −10 −10 −8 −6 −4 ID – VDS Common source Ta = 25°C Pulse test −3.5 −6 −4 (A) ID −3 −2.8 −2 VGS = −2.5V −1 Drain current Drain current ID (A) −4 −3 −8 −3 −2 VGS = −2.5 V 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 0 0 −2 −4 −6 −8 −10 Drain−source voltage VDS (V) Drain−source voltage VDS (V) ID – VGS −10 −2.0 VDS – VGS VDS (V) Common source Ta = 25°C Pulse test ID (A) −8 Common source VDS = −10 V Pulse test −1.6 Drain current 25 −4 Drain−source voltage −6 −1.2 −0.8 −5 −0.4 −2.5 ID = −1.2 A 0 0 −4 −8 −12 −16 −20 −2 100 Ta = −55°C 0 0 −1 −2 −3 −4 −5 Gate−source voltage VGS (V) Gate−source voltage VGS (V) ⎪Yfs⎪ − ID (S) 100 Common source VDS = −10 V Pulse test 0.5 Common source Ta = 25°C Pulse test RDS (ON) − ID ⎪Yfs⎪ Drain−source ON-resistance RDS (ON) (Ω) 0.4 Forward transfer admittance 10 Ta = −55°C 100 25 0.3 0.2 −4 V 1 0.1 VGS = −10V 0.1 −0.1 −1 −10 −100 0 0 −2 −4 −6 −8 −10 Drain current ID (A) Drain current ID (A) 3 2009-09-29 2SJ669 RDS (ON) − Ta −0.4 Common source Pulse test 10 Common source Ta = 25°C Pulse test IDR − VDS −5 −10 Drain−source ON-resistance RDS (ON) (Ω) −2.5 −1.2 −0.2 VGS = −4 V −1.2 −0.1 VGS = −10 V 0 −80 −2.5 −5 Drain reverse current IDR −0.3 I D = −5 A (A) −3 1 −1 VGS = 0 V 0.1 −40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (°C) Drain−source voltage VDS (V) Capacitance – VDS 10000 Common source f = 1 MHz Vth − Ta −2.0 Tc = 25°C 1000 Ciss Vth (V) VGS = 0 V (pF) −1.6 Common source VDS = −10 V ID = 1 m A Pulse test C Gate threshold voltage −100 −1.2 Capacitance 100 Coss −0.8 Crss 10 −0.1 −0.4 −1 −10 0 −80 −40 0 40 80 120 160 Drain−source voltage VDS (V) Ambient temperature Ta (°C) PD − Ta 2.0 Dynamic input/output characteristics −50 VDS −25 I D = −5 A −40 Ta = 25°C Pulse test −30 −15 (W) VDS (V) 1.5 Drain power dissipation 1.0 Drain−source voltage −20 −12V −24V −10 0.5 −10 VGS 0 VDD = −48 V −5 0 0 40 80 120 160 200 0 5 10 15 20 25 30 0 Ambient temperature Ta (°C) Total gate charge Qg (nC) 4 2009-09-29 Gate−source voltage VGS −20 PD (V) Common source 2SJ669 rth − tw 10 Normalized transient thermal impedance 1 Duty = 0.5 0.2 rth (t)/Rth (ch-a) 0.1 0.1 0.05 0.02 0.01 PDM t Single pulse T Duty = t/T Rth (ch-a) = 104°C/W 0.01 0.001 100 μ 1m 10 m 100 m 1 10 100 Pulse width tw (s) EAS – Tch Safe operating area 100 50 (mJ) 100 μs * 40 ID max (Pulsed) * 10 EAS Avalanche nergy ID max (Continuous) 1 ms * 30 (A) 20 Drain current ID 1 DC operation Ta = 25°C 0.1 10 0 25 50 75 100 125 150 0.01 *:Single nonrepetitive pulse Tc = 25°C Curves linearly must with be derated in VDSS max 1 10 100 increase Channel temperature (initia) Tch (°C) temperature. 0.001 0.01 0.1 0V −15 V BVDSS IAR VDD Test circuit VDS Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ Drain−source voltage VDS (V) RG = 25 Ω VDD = −25 V, L = 2.2 mH 5 2009-09-29 2SJ669 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29