2SK2719
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK2719
Chopper Regulator, DC-DC Converter and Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 900 900 ±30 3 A 9 125 295 3 12.5 150 −55~150 W mJ A mJ °C °C Unit V V V
1. Gate 2. Drain (heat sink) 3. Source
JEDEC JEITA TOSHIBA
― SC-65 2-16C1B
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.0 50.0 Unit °C/W °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 58 μH, RG = 25 Ω, IAR = 45 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-10
2SK2719
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf ton 10 V 0V 4.7 Ω VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1.5 A VDS = 20 V, ID = 1.5 A Min ⎯ ±30 ⎯ 900 2.0 ⎯ 0.65 ⎯ ⎯ ⎯ ⎯ VOUT ⎯ 55 ⎯ ns ⎯ 30 ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 3.7 2.6 750 10 70 15 Max ±10 ⎯ 100 ⎯ 4.0 4.3 ⎯ ⎯ ⎯ ⎯ ⎯ Unit μA V μA V V Ω S pF pF pF
ID = 1.5 A RL = 133 Ω
VDD ∼ 200 V − Duty < 1%, tw = 10 μs =
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge
toff
⎯
110
⎯
Qg Qgs Qgd VDD ∼ 400 V, VGS = 10 V, ID = 3 A −
⎯ ⎯ ⎯
25 13 12
⎯ ⎯ ⎯
nC nC nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDR Test Condition ⎯ Min ⎯ Typ. ⎯ Max 3 Unit A
IDRP VDSF trr Qrr
⎯ IDR = 3 A, VGS = 0 V IDR = 3 A, VGS = 0 V dIDR/dt = 100 A/μs
⎯ ⎯ ⎯ ⎯
⎯ ⎯ 1100 7.5
9 −1.9 ⎯ ⎯
A V ns μC
Marking
TOSHIBA
K2719
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2006-11-10
2SK2719
ID – VDS
5 Common source Tc = 25°C Pulse test 5 8 10 6 5.25 4 5.5 10
ID – VDS
8 6 5.75 3 5.5 2 5.25 5 1 VGS = 4 V VGS = 4.5 V 0 0 Common source Tc = 25°C Pulse test
4
Drain current ID (A)
3
5
2
4.75
4.5 1
0 0
4
8
12
16
20
Drain current ID (A)
10
20
30
40
50
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID – VGS
6 Common source VDS = 20 V Pulse test 25
VDS – VGS
Common source Tc = 25°C Pulse test
VDS (V) Drain-source voltage
5
Tc = −55°C 25
20
Drain current ID (A)
4
15
3
ID = 3 A
100
10 1.5 5 0.8
2
1
0 0
2
4
6
8
10
12
0 0
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
⎪Yfs⎪ – ID
(S)
10 5 3 100 0.1 0.5 0.3 Common source VDS = 20 V Pulse test 0.1 0.1 0.3 1 3 10 30 Tc = −55°C 25 30 Common source Tc = 25°C VGS = 10 V Pulse test
RDS (ON) – ID
Drain-source ON resistance RDS (ON) (Ω)
Forward transfer admittance ⎪Yfs⎪
10 5 3
1 0.5 0.1
0.3
1
3
10
30
Drain current ID (A)
Drain current ID (A)
3
2006-11-10
2SK2719
RDS (ON) – Tc
(Ω)
20 Common source VGS = 10 V Pulse test 10 5 Common source Tc = 25°C Pulse test
IDR – VDS
Drain-source ON resistance RDS (ON)
(A) Drain reverse current IDR
ID = 3 A 1.5 0.8
16
3
1 0.5 0.3 10 0.1 0.05 0.03 5 1 VGS = 0, −1 V 3
12
8
4
0 −80
−40
0
40
80
120
160
0.01 0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
Case temperature Tc (°C)
Drain-source voltage
VDS (V)
Capacitance – VDS
2000 1000 500 300 Ciss 5
Vth – Tc
Common source VDS = 10 V ID = 1 m A Pulse test
Vth (V) Gate threshold voltage
100
4
(pF)
Capacitance C
3
100 Coss 50 30 Common source VGS = 0 V f = 1 MHz Tc = 25°C Pulse test 0.3 1 3 10 30
2
10 5 0.1
Crss
1
0 −80
−40
0
40
80
120
160
Drain-source voltage
VDS (V)
Case temperature Tc (°C)
PD – Tc
150 500
Dynamic Input/Output Characteristics
Common source Tc = 25°C ID = 3 A Pulse test VDS 300 200 200 400 8 VDD = 100 V 12 20
Drain power dissipation PD (W)
VDS (V)
400
16
100
Drain-source voltage
50
100
VGS
4
0 0
40
80
120
160
0 0
8
16
24
32
0 40
Case temperature Tc (°C)
Total gate charge Qg (nC)
4
2006-11-10
Gate-source voltage
VGS (V)
2SK2719
rth – tw
3
Normalized transient thermal impedance rth (t)/Rth (ch-c)
1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.01 0.01 0.005 0.003 10 μ 100 μ 1m 10 m 100 m 0.05 0.02 Single pulse PDM t T Duty = t/T Rth (ch-c) = 1.0°C/W 1 10
Pulse width
tw
(s)
Safe Operating Area
30 ID max (pulsed)* 500
EAS – Tch
Avalanche energy EAS (mJ)
10
100 μs*
400
3
ID max (continuous)
1 ms*
Drain current ID (A)
300
1 0.5 0.3
DC operation Tc = 25°C
200
100
0.1 0.05 0.03 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 3 10 30 100 0 25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
VDSS max 300 1000
0.01 1
Drain-source voltage
VDS (V)
15 V −15 V
BVDSS IAR VDD VDS
Test circuit RG = 25 Ω VDD = 90 V, L = 60 mH
Wave form
⎞ 1 2⎛ B VDSS ⎟ Ε AS = ·L·I · ⎜ ⎜B 2 − VDD ⎟ ⎝ VDSS ⎠
5
2006-11-10
2SK2719
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-10