2SK3085

2SK3085 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 3.5 14 75 227 3.5 7.5 150 −55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA TO-220AB SC-46 2-10P1B Weight: 2.0 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.67 83.3 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 28.8 mH, RG = 25 Ω, IAR = 3.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-08 2SK3085 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate -source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ∼ 400 V, VGS = 10 V, ID = 3.5 A − Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton ID = 1.8 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1.8 A VDS = 10 V, ID = 1.8 A Min ⎯ ±30 ⎯ 600 2.0 ⎯ 2.0 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.7 3.0 800 6 65 15 50 15 85 20 10 10 Max ±10 ⎯ 100 ⎯ 4.0 2.2 ⎯ ⎯ ⎯ pF Unit μA V μA V V Ω S ⎯ 10 V VGS 0V 50 Ω ⎯ ⎯ ⎯ ns ⎯ VOUT ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ RL = 111 Ω ⎯ ⎯ ⎯ ⎯ ⎯ nC Duty < 1%, tw = 10 μs = VDD ∼ 220 V − Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 3.5 A, VGS = 0 V IDR = 3.5 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 400 2.6 Max 3.5 14 −1.7 ⎯ ⎯ Unit A A V ns μC Marking K3085 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-08 2SK3085 ID – VDS 2.0 Common source Tc = 25 °C Pulse test 8 1.2 4.8 0.8 4.6 0.4 4.4 4.2 0 VGS = 4 V 0 1 2 3 4 5 0 10 15 7 6 5 4 5 Common source Tc = 25 °C 10 Pulse test ID – VDS 15 7 6 8 1.6 Drain current ID (A) Drain current ID (A) 5.5 3 5.5 2 5 1 4.5 VGS = 4 V 0 4 8 12 16 20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VDS 4 Common source VDS = 20 V Pulse test 20 VDS – VGS Common source Tc = 25 °C Pulse test Tc = −55 °C 25 VDS (V) Drain-source voltage 16 Drain current ID (A) 3 12 2 100 8 ID = 3.5 A 1 4 1.8 1 0 0 2 4 6 8 10 0 0 4 8 12 16 20 24 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID 10 Common source VDS = 20 V Pulse test 10 Common source Tc = 25 °C Pulse test RDS (ON) – ID (S) Forward transfer admittance ⎪Yfs⎪ 3 100 Drain-source on resistance RDS (ON) (Ω) 5 Tc = −55 °C 25 5 3 VGS = 10, 15 V 1 1 0.5 0.3 0.1 0.5 0.3 0.1 0.3 0.5 1 3 5 10 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 3 2006-11-08 2SK3085 RDS (ON) – Tc 10 Common source VGS = 10 V Pulse test 30 Common source Tc = 25 °C Pulse test IDR – VDS (A) Drain reverse current IDR Drain-source on resistance RDS (ON) (Ω) 8 10 5 3 6 4 ID = 2.5 A 1 1 0.5 0.3 3 10 VGS = 0, −1 V 2 0 −80 −40 0 40 80 120 160 0 1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Case temperature Tc (°C) Drain-source voltage VDS (V) Capacitance – VDS 3000 5 Vth – Tc Common source VDS = 10 V ID = 1 m A Pulse test Vth (V) Gate threshold voltage 1000 500 300 100 50 30 Common source VGS = 0 V f = 1 MHz Tc = 25 °C 3 5 10 30 Ciss 4 (pF) 3 Capacitance C Coss 2 10 1 Crss 50 100 0 −80 −40 0 40 80 120 160 3 1 Drain-source voltage VDS (V) Case temperature Tc (°C) PD – Tc 100 Drain power dissipation PD (W) 80 60 40 20 0 0 40 80 120 160 200 Case temperature Tc (°C) 4 2006-11-08 2SK3085 rth − tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.01 0.01 0.005 0.003 10 μ 100 μ 1m 10 m 100 m 0.05 0.02 Single pulse PDM t T Duty = t/T Rth (ch-c) = 1.67°C/W 1 10 Pulse width tw (S) Safe operating area 100 250 50 30 ID max (pulse) * 10 100 μs * EAS – Tch EAS (mJ) Avalanche energy 200 150 (A) 5 3 ID max (continuous) 1 ms * 100 ID Drain current 1 0.5 0.3 DC operation Tc = 25°C 50 0 25 50 75 100 125 150 0.1 * Single nonrepetitive pulse 0.05 0.03 Tc = 25°C Curves must be derated linearly with increase in temperature. VDSS max 0.01 1 3 10 30 100 300 1000 Channel temperature Tch (°C) 15 V −15 V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 Ω VDD = 90 V, L = 28.8 mH Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B 2 − VDD ⎟ ⎝ VDSS ⎠ 5 2006-11-08 2SK3085 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-08