2SK3125

2SK3125 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3125 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) Enhancement model: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 70 210 150 955 70 15 150 −55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16H1A Weight: 3.65 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 0.833 Unit °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C, L = 140 μH, RG = 25 Ω, IAR = 70 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 2SK3125 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr I D = 30 A VOUT RL = 0.5 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 30 A VDS = 10 V, ID = 30 A Min ⎯ ⎯ 30 1.5 ⎯ 30 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 5.3 60 4600 1400 2300 25 Max ±10 100 ⎯ 3.0 7.0 ⎯ ⎯ ⎯ pF Unit μA μA V V mΩ S ⎯ 10 V VGS 0V 4.7 Ω ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ Turn-ON time Switching time Fall time ton 40 tf VDD ∼ 15 V − Duty < 1%, tw = 10 μs = 150 ⎯ ⎯ ⎯ ⎯ ⎯ nC Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge toff Qg Qgs Qgd ⎯ ⎯ 425 130 90 40 VDD ∼ 24 V, VGS = 10 V, ID = 70 A − ⎯ ⎯ Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 70 A, VGS = 0 V IDR = 70 A, VGS = 0 V, dIDR/dt = 50 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 150 225 Max 70 210 −1.7 ⎯ ⎯ Unit A A V ns nC Marking TOSHIBA K3125 Part No. (or abbreviation code) Lot No. 2 2006-11-16 2SK3125 ID − VDS 100 Common source Tc = 25°C Pulse test 8 60 4 6 10 100 5 4.5 10 8 80 6 5 4.5 ID − VDS Common source Tc = 25°C Pulse test 80 4.25 Drain current ID (A) Drain current ID (A) 60 4 40 3.75 3.5 40 VOU 3.5 20 VGS = 3.25 V 0 0 20 VGS = 3.25 V 0 0 0.2 0.4 0.6 0.8 1 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID − VGS 1.2 VDS − VGS Common source Tc = 25°C Pulse test Drain current ID (A) 80 VDS (V) Drain-source voltage 100 1.0 0.8 60 0.6 ID = 7 0 A 40 25 Tc = −55°C 0.4 20 100 0 0 Common source VDS = 10 V Pulse test 3 4 5 6 0.2 30 15 2 4 6 8 10 12 1 2 0 0 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ − ID 1000 100 RDS (ON) − ID Forward transfer admittance ⎪Yfs⎪ (S) 100 Tc = −55°C 100 25 Drain-source ON resistance RDS (ON) (mΩ) 10 VGS = 10, 15 V 10 1 1 Common source VDS = 10 V Pulse test 10 100 1000 1 1 Common source Tc = 25°C Pulse test 10 100 Drain current ID (A) Drain current ID (A) 3 2006-11-16 2SK3125 RDS (ON) − Tc 20 Common source VGS = 10 V Pulse test 1000 IDR − VDS Drain-source ON resistance RDS (ON) (Ω) 16 IDR (A) 100 10 5 3 8 ID = 15, 30 A 70 Drain reverse current 12 10 1 VGS = 0 V, −1 V 4 Common source Tc = 25°C Pulse test 1 0 0.4 0.8 1.2 1.6 2.0 0 −80 −40 0 40 80 120 160 Case temperature Tc (°C) Drain-source voltage VDS (V) Vth – Tc 5 50 Dynamic input/output characteristics Common source ID = 7 0 A Tc = 25°C Pulse test 25 4 VDS (V) 40 20 Gate threshold voltage VDS 20 6 10 VDD = 24 V 2 1 Common source VDS = 10 V ID = 1 m A Pulse test −40 0 40 80 120 160 10 VGS 0 0 5 0 −80 40 80 120 160 0 200 Case temperature Tc (°C) Total gate charge Qg (nC) PD − Tc 200 Drain power dissipation PD (W) 150 100 50 0 0 40 80 120 160 200 Case temperature Tc (°C) 4 2006-11-16 Gate threshold voltage Drain-source voltage 3 30 12 15 VGS (V) Vth (V) 2SK3125 rth − tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 PDM t T Single pulse 0.01 Duty = t/T Rth (ch-c) = 0.833°C/W 1m 10 m 100 m 1 10 0.1 0.05 0.02 0.01 10 μ 100 μ Pulse width tw (S) 1000 Safe operating area 1000 EAS – Tch ID max (pulse) * 100 μs * Avalanche energy EAS (mJ) 800 Drain current ID (A) 100 ID max (continuous) 1 ms * 600 DC operation Tc = 25°C 10 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 400 200 VDSS max 10 100 0 25 50 75 100 125 150 1 0.1 Channel temperature (initial) Tch (°C) Drain-source voltage VDS (V) 15 V −15 V BVDSS IAR VDD VDS Test circuit RG = 25 Ω VDD = 25 V、L = 140 μH Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ 5 2006-11-16 2SK3125 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-16