2SK3309
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3309
Switching Regulator Applications
•
•
•
•
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.)
High forward transfer admittance: |Yfs| = 4.3 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
10
Pulse
(Note 1)
IDP
40
Drain power dissipation (Tc = 25°C)
PD
65
W
Single pulse avalanche energy
(Note 2)
EAS
222
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
6.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
A
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.92
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Note 1: Please use devise on condition that the channel temperature is
below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 Ω,
IAR = 10 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2006-11-06
2SK3309
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Typ.
Max
Unit
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
μA
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
⎯
⎯
V
IDSS
VDS = 450 V, VGS = 0 V
⎯
⎯
100
μA
⎯
⎯
V
Drain cut-off current
Drain-source breakdown voltage
Min
IGSS
Gate leakage current
Gate -source breakdown voltage
Test Condition
450
V (BR) DSS
ID = 10 mA, VGS = 0 V
Vth
VDS = 10 V, ID = 1 mA
3.0
⎯
5.0
V
Gate threshold voltage
550
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
⎯
0.48
0.65
Ω
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, ID = 5 A
1.5
4.3
⎯
S
Input capacitance
Ciss
⎯
920
⎯
Reverse transfer capacitance
Crss
⎯
12
⎯
Output capacitance
Coss
⎯
140
⎯
⎯
25
⎯
⎯
35
⎯
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Switching time
Fall time
VOUT
0V
ton
RL = 40 Ω
10 Ω
Turn-on time
ID = 5 A
10 V
VGS
tf
Duty <
= 1%, tw = 10 μs
Turn-off time
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
ns
⎯
10
⎯
⎯
60
⎯
⎯
23
⎯
⎯
9
⎯
⎯
14
⎯
VDD ∼
− 200 V
toff
Total gate charge
pF
VDD ∼
− 360 V, VGS = 10 V, ID = 10 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
⎯
⎯
⎯
10
A
Pulse drain reverse current
IDRP
⎯
⎯
⎯
40
A
(Note 1)
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
⎯
⎯
−1.7
V
Reverse recovery time
trr
IDR = 10 A, VGS = 0 V,
⎯
280
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/μs
⎯
2.7
⎯
μC
Marking
K3309
※
※ Lot Number
Type
Month (starting from alphabet A)
Year
(last number of the christian era)
2
2006-11-06
2SK3309
ID – VDS
Drain current ID (A)
8
15
Common source
ID – VDS
20
10
15
8.5
Tc = 25°C
Pulse test
8
6
7.5
4
Common source
10
7
Tc = 25°C
Pulse test
9
16
Drain current ID (A)
10
8.5
12
8
8
7.5
7
4
2
VGS = 6 V
0
0
2
4
6
Drain-source voltage
8
VGS = 6 V
0
0
10
VDS (V)
10
20
Drain-source voltage
ID – VGS
Common source
VDS = 20 V
Pulse test
12
8
25
4
Tc = −55°C
100
0
0
2
4
6
Gate-source voltage
8
10
Tc = 25°C
Pulse test
8
6
ID = 10 A
4
5
2
2.5
0
0
12
VGS (V)
4
16
20
VGS (V)
RDS (ON) – ID
10
Common source
Tc = 25°C
Pulse test
Drain-source on resistance
RDS (ON) (Ω)
(S)
Forward transfer admittance ⎪Yfs⎪
12
8
Gate-source voltage
Common source
VDS = 20 V
Pulse test
10
25
Tc = −55°C
100
1
0.1
0.1
VDS (V)
Common source
⎪Yfs⎪ – ID
100
50
VDS – VGS
Drain-source voltage
Drain current ID (A)
16
40
10
VDS (V)
20
30
1
10
1
VGS = 10, 15 V
0.1
1
100
Drain current ID (A)
10
100
Drain current ID (A)
3
2006-11-06
2SK3309
RDS (ON) – Tc
Common source
VGS = 10 V
Pulse test
5
ID = 10 A
2.5
0.8
0.4
10
1
10
5
0.1
1
3
−40
0
40
80
Case temperature Tc
120
0.01
0
160
(°C)
−0.2
VGS = 0, −1 V
−0.4
Capacitance – VDS
Vth – Tc
Vth (V)
Gate threshold voltage
Capacitance C
(pF)
Ciss
100
Coss
10 Common
source
Crss
VGS = 0 V
1
10
100
Drain-source voltage
4
3
2
1
−40
0
40
80
Case temperature Tc
1000
PD – Tc
VDS (V)
80
Drain-source voltage
60
40
20
80
(°C)
Dynamic input/output characteristics
500
40
160
120
VDS (V)
100
Drain power dissipation PD (W)
Common source
VDS = 10 V
ID = 1 mA
Pulse test
5
0
−80
f = 1 MHz
1
0.1
−1.2
VDS (V)
6
1000
−1
−0.8
Drain-source voltage
10000
0
0
−0.6
120
Case temperature Tc
160
(°C)
ID = 10 A
Tc = 25°C
Pulse test
400
VDD = 90 V
300
VDS
200
20
16
12
360
180
8
VGS
4
100
0
0
200
Common source
10
20
30
40
VGS (V)
0
−80
Gate-source voltage
1.2
Common source
Tc = 25°C
Pulse test
(A)
1.6
IDR – VDS
100
Drain reverse current IDR
Drain-source on resistance
RDS (ON) (Ω)
2.0
0
50
Total gate charge Qg (nC)
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2006-11-06
2SK3309
rth – tw
Normalized transient thermal impedance
rth (t)/Rth (ch-a)
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
Single pulse
t
0.01
0.01
T
Duty = t/T
Rth (ch-c) = 1.92°C/W
0.001
10 μ
100 μ
1m
10 m
Pulse width
100 m
tw
1
10
(S)
EAS – Tch
Safe operating area
400
100
ID max
(continuous)
Avalanche energy EAS (mJ)
ID max (pulse) *
100 μs *
Drain current ID
(A)
10
1 ms *
1
DC operation
Tc = 25°C
300
200
100
0
25
0.1
50
75
100
125
150
Channel temperature (initial) Tch (°C)
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
VDSS max
temperature.
0.01
1
15 V
10
Drain-source voltage
100
1000
BVDSS
IAR
−15 V
VDS (V)
VDD
Test circuit
RG = 25 Ω
VDD = 90 V, L = 3.7 mH
5
VDS
Wave form
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
⎝ VDSS VDD ⎠
2006-11-06
2SK3309
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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