2SK3403
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3403
Switching Regulator Applications
•
•
•
•
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.)
High forward transfer admittance: |Yfs| = 5.8 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
13
Pulse
(Note 1)
IDP
52
Drain power dissipation (Tc = 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
350
mJ
Avalanche current
IAR
13
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
A
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.46 mH, RG = 25 Ω,
IAR = 13 A
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2010-04-13
2SK3403
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Typ.
Max
Unit
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
μA
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
⎯
⎯
V
IDSS
VDS = 450 V, VGS = 0 V
⎯
⎯
100
μA
Drain cut-off current
Drain-source breakdown voltage
Min
IGSS
Gate leakage current
Gate-source breakdown voltage
Test Condition
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
3.0
⎯
5.0
V
Gate threshold voltage
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 6 A
⎯
0.29
0.4
Ω
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, ID = 6 A
3.0
5.8
⎯
S
Input capacitance
Ciss
⎯
1600
⎯
Reverse transfer capacitance
Crss
⎯
17
⎯
Output capacitance
Coss
⎯
220
⎯
⎯
28
⎯
⎯
45
⎯
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
ton
Switching time
Fall time
Output
0V
RL =
33.3 Ω
10 Ω
Turn-on time
ID = 6 A
10 V
VGS
tf
pF
ns
⎯
10
⎯
⎯
56
⎯
⎯
34
⎯
⎯
19
⎯
⎯
15
⎯
VDD ≈ 200 V
Turn-off time
Duty ≤ 1%, tw = 10 μs
toff
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD ≈ 360 V, VGS = 10 V, ID = 13 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
⎯
⎯
⎯
13
A
Pulse drain reverse current
IDRP
⎯
⎯
⎯
52
A
(Note 1)
Forward voltage (diode)
VDSF
IDR = 13 A, VGS = 0 V
⎯
⎯
−1.7
V
Reverse recovery time
trr
IDR = 13 A, VGS = 0 V,
⎯
300
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/μs
⎯
3.4
⎯
μC
Marking
K3403
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2010-04-13
2SK3403
ID – VDS
Common source
Tc = 25°C
Pulse test
ID – VDS
20
7.5
10
Drain current ID (A)
8
15
7.0
6
4
6.5
VGS = 6.0 V
2
15
10
8.5
Common source
Tc = 25°C
Pulse test
8.25
16
7.25
Drain current ID (A)
10
8
12
7.5
8
7
6.5
4
VGS = 6 V
0
0
2
4
6
Drain-source voltage
8
0
0
10
VDS (V)
10
20
Drain-source voltage
ID – VGS
40
VDS – VGS
VDS (V)
20
25
10
Tc = −55°C
100
50
VDS (V)
10
Common source
VDS = 20 V
Pulse test
Drain-source voltage
Drain current ID (A)
30
30
Common source
Tc = 25°C
Pulse test
8
6
ID = 13 A
4
6
2
3
0
3
6
9
Gate-source voltage
0
0
12
VGS (V)
4
8
Gate-source voltage
⎪Yfs⎪ – ID
(Ω)
(S)
Forward transfer admittance ⎪Yfs⎪
Pulse test
Tc = −55°C
10
Drain-source on resistance RDS (ON)
VDS = 20 V
25
100
1
0.1
0.1
1
16
20
VGS (V)
RDS (ON) – ID
50
Common source
12
10
100
Drain current ID (A)
10
Common source
Tc = 25°C
Pulse test
1
VGS = 10 V
15
0.1
0.1
1
10
100
Drain current ID (A)
3
2010-04-13
2SK3403
RDS (ON) – Tc
IDR – VDS
1.0
100
Common source
Pulse test
6
ID = 13 A
0.6
Tc = 25°C
3
0.4
0.2
Pulse test
10
1
10
3
1
5
−40
0
40
80
Case temperature Tc
120
0.1
0
160
(°C)
−0.2
−0.4
Capacitance – VDS
Vth (V)
Gate threshold voltage
(pF)
Capacitance C
Coss
Common
10 source
VGS = 0 V
f = 1 MHz
Crss
1
10
100
Drain-source voltage
Common source
VDS = 10 V
ID = 1 mA
Pulse test
5
4
3
2
1
0
−80
Tc = 25°C
1
0.1
−40
0
40
80
Case temperature Tc
1000
PD – Tc
160
(°C)
Dynamic input/output characteristics
VDS (V)
500
160
Drain-source voltage
120
80
40
80
120
VDS (V)
200
40
−1.2
Vth – Tc
1000
100
−1
VDS (V)
6
Ciss
Drain power dissipation PD (W)
−0.8
Drain-source voltage
10000
0
0
−0.6
120
Case temperature Tc
160
400
300
(°C)
VDD = 90 V
VDS
16
12
VGS
200
20
180
360
8
4
100
0
0
200
Common source
ID = 13 A
Tc = 25°C
Pulse test
10
20
30
40
VGS (V)
0
−80
VGS = 0, −1 V
Gate-source voltage
0.8
(A)
VGS = 10 V
Drain reverse current IDR
Drain-source on resistance
RDS (ON) (Ω)
Common source
0
50
Total gate charge Qg (nC)
4
2010-04-13
2SK3403
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
rth – tw
3
1
0.5
Duty = 0.5
0.3
0.2
0.1
0.1
0.05
0.03
PDM
0.05
t
0.02
T
Single pulse
0.01
0.01
10 μ
100 μ
Duty = t/T
Rth (ch-c) = 1.25°C/W
1m
10 m
Pulse width
100 m
tw
1
10
(s)
EAS – Tch
Safe operating area
400
100
ID max (pulse) *
30
ID max
(continuous)
100 μs *
(A)
10
Drain current ID
Avalanche energy EAS (mJ)
50
1 ms *
5
3
DC operation
Tc = 25°C
1
0.5
300
200
100
0
25
0.3
50
75
100
125
150
Channel temperature (initial) Tch (°C)
* Single nonrepetitive pulse
Tc = 25°C
0.1
Curves must be derated linearly
0.05
0.03
with increase in temperature.
3
10
30
Drain-source voltage
VDSS max
100
300
15 V
1000
BVDSS
IAR
−15 V
VDS (V)
VDD
Test circuit
RG = 25 Ω
VDD = 90 V, L = 3.46 mH
5
VDS
Waveform
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
⎝ VDSS VDD ⎠
2010-04-13
2SK3403
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
6
2010-04-13
