2SK3437

2SK3437 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3437 DC-DC Converter, Relay Drive and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC (Note 1) Drain current Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 10 30 80 252 10 8 150 −55~150 A W mJ A mJ °C °C Unit V V V Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-10S1B Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.56 83.3 Unit °C/W °C/W JEDEC JEITA TOSHIBA ― ― 2-10S2B Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.41 mH, RG = 25 Ω, IAR = 10 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Weight: 1.5 g (typ.) 1 2006-11-08 2SK3437 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ∼ 400 V, VGS = 10 V, ID = 10 A − ID = 5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 15 V, ID = 5 A Min ⎯ ±30 ⎯ 600 3.0 ⎯ 2.0 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 0.74 4.5 1200 10 130 13 Max ±10 ⎯ 100 ⎯ 5.0 1.0 ⎯ ⎯ ⎯ pF Unit μA V μA V V Ω S ⎯ 10 V VGS 0V 10 Ω RL = 60 Ω VDD ∼ 300 V − VOUT ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Turn-ON time Switching time Fall time 40 8 ⎯ ⎯ ⎯ ⎯ ⎯ nC Duty < 1%, tw = 10 μs = Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge 50 28 16 12 Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1600 17 Max 10 30 −1.7 ⎯ ⎯ Unit A A V ns μC Marking K3437 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-08 2SK3437 ID – VDS 10 Common source Tc = 25°C Pulse test 15 10 7.75 16 20 Common source Tc = 25°C Pulse test ID – VDS 15 10 8.5 (A) ID 6 ID 7.25 7.0 (A) 8 7.5 12 8.0 Drain current Drain current 4 6.75 6.5 8 7.5 7.25 7.0 2 VGS = 6.0 V 4 6.5 VGS = 6.0 V 0 0 4 8 12 16 20 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 12 VDS – VGS 20 Common source Tc = 25°C Pulse test 10 (V) 16 Common source VDS = 20 V Pulse test (A) ID 8 VDS Drain-source voltage 12 ID = 1 0 A 8 25 Drain current 6 4 2 100 4 5 2.5 Tc = −55°C 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID 100 Common source VDS = 20 V Pulse test 100 Common source Tc = 25°C Pulse test RDS (ON) – ID ⎪Yfs⎪ (S) Forward transfer admittacne 10 Tc = −55°C 25 100 Drain-source on resistance RDS (ON) (Ω) 10 1 1 VGS = 10, 15 V 0.1 0.1 1 10 100 0.1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2006-11-08 2SK3437 RDS (ON) – Tc 2.5 Common source VGS = 10 V Pulse test 100 IDR – VDS (A) Common source Tc = 25°C Pulse test Drain-source on resistance RDS (ON) (Ω) 2.0 ID = 1 0 A 5 2.5 IDR Drain reverse current 10 1.5 1.0 1 0.5 10 0.1 0 5 −0.2 3 −0.4 1 −0.6 0 −80 VGS = 0, −1 V −0.8 −1 −1.2 −40 0 40 80 120 160 Channel temperature Tc (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 6 Vth – Tc Vth (V) Common source VDS = 10 V ID = 1 m A Pulse test 5 (pF) 1000 Ciss Gate threshold voltage 4 C 3 Capacitance 100 Coss 2 10 Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 0.1 1 10 100 1000 Crss 1 0 −80 −40 0 40 80 120 160 Channel temperature Tc (°C) Drain-source Voltage VDS (V) PD – Tc 100 500 Dynamic input/output characteristics Common source ID = 1 0 A Tc = 25°C Pulse test VDS 300 VDD = 100 V 200 400 200 VGS 100 4 8 12 20 (W) (V) PD 80 400 16 VDS Drain Power dissipation Drain-source Voltage 40 20 0 0 40 80 120 160 200 0 0 10 20 30 0 40 Channel temperature Tc (°C) Total gate charge Qg (nC) 4 2006-11-08 Gate-source voltage 60 VGS (V) 2SK3437 rth − tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-a) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse width tw (S) Safe operating area 100 400 EAS – Tch Avalanche energy EAS (mJ) ID max (pulsed) * 300 10 ID max (continuous) * 100 μs * Drain current ID (A) 1 ms * 200 1 DC operation Tc = 25°C 100 0 25 0.1 * Single nonrepetitive pulse Tc = 25°C 50 75 100 125 150 Channel temperature (initial) Tch (°C) Curves must be derated linearly with increase in temperature. 0.01 1 10 VDSS max 100 1000 15 V −15 V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 Ω VDD = 90 V, L = 4.41 mH Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ 5 2006-11-08 2SK3437 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-08