2SK3439

2SK3439 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3439 DC-DC Converter Applications Relay Drive and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Pulse (t < 1 ms) = (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 75 300 125 731 75 12.5 150 −55 to 150 A W mJ A mJ °C °C Unit V V V Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-97 2-9F1B Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.00 Unit °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 24 V, Tch = 25°C (initial), L = 100 μH, RG = 25 Ω, IAR = 75 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into the S2 pin. 4 1 2 3 1 2009-09-29 2SK3439 Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Part No. (or abbreviation code) Not underlined: [[Pb]]/INCLUDES > MCV K3439 Lot No. Note 4 Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous Electrical Characteristics (Note 5) (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd VDD ≈ 34 V, VGS = 10 V, ID = 75 A Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 4.7 Ω VGS 10 V 0V ID = 3 8 A VOUT RL = 0.39 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 38 A VGS = 4 V, ID = 38 A VDS = 10 V, ID = 38 A Min ⎯ ⎯ 30 1.3 ⎯ ⎯ 35 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 3.8 5.0 70 5450 620 1850 15 30 65 110 116 84 32 Max ±10 100 ⎯ 2.5 5.0 10 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit μA μA V V mΩ S VDD ≈ 15 V Duty < 1%, tw = 10 μs = Note 5: Connect the S1 and S2 pins together, and ground them except during switching time measurement. Source-Drain Ratings and Characteristics (Note 6) (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1, Note 6) Pulse drain reverse current (Note 1, Note 6) Continuous drain reverse current (Note 1, Note 6) Pulse drain reverse current (Note 1, Note 6) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition ⎯ ⎯ ⎯ ⎯ IDR1 = 75 A, VGS = 0 V IDR = 75 A, VGS = 0 V, dIDR/dt = 50 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 120 180 Max 75 300 1 4 −1.5 ⎯ ⎯ Unit A A A A V ns nC Note 6: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open. IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them. 2 2009-09-29 2SK3439 ID – VDS 100 Common source Tc = 25°C Pulse test 100 6 8 4 3.5 80 10 4 6 ID – VDS 3.4 Common source Tc = 25°C Pulse test 80 Drain current ID (A) 10 60 Drain current ID (A) 3.3 60 3.2 40 3.0 40 3.0 20 VGS = 2.8 V 20 VGS = 2.8 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 160 Common source VDS = 10 V Pulse test 0.8 VDS – VGS Common source Tc = 25°C Pulse test 0.6 Drain current ID (A) 120 80 Drain-source voltage VDS (V) 0.4 ID = 7 5 A 0.2 38 19 40 Tc = −55°C 100 0 0 2 25 4 6 0 0 5 10 15 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID 500 30 Common source Tc = −55°C Tc = 25°C Pulse test 10 RDS (ON) – ID (S) Forward transfer admittance ⎪Yfs⎪ 300 100 50 30 25 100 Drain-source on resistance RDS (ON) (mΩ) 5 3 VGS = 4 V 10 10 5 3 1 3 5 10 30 Common source VDS = 10 V Pulse test 50 100 300 1 0.5 1 3 5 10 30 50 100 Drain current ID (A) Drain current ID (A) 3 2009-09-29 2SK3439 RDS (ON) – Tc 6 Common source Pulse test 19, 38 4 VDS = 10 V ID = 7 5 A 300 100 50 30 10 5 3 1 0.5 0.3 0.1 0 IDR – VDS (A) 5 10 5 Drain-source on resistance RDS (ON) (m Ω) 3 3 Drain reverse current IDR 1 VGS = 0 V 2 1 Common source Tc = 25°C Pulse test 0 −80 −40 0 40 80 120 160 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Case temperature Tc (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 Ciss 4 Vth – Tc Common source Vth (V) VDS = 10 V 3 ID = 1 m A Pulse test 3000 (pF) Coss 1000 Crss Common source 300 VGS = 0 V f = 1 MHz Tc = 25°C 100 0.1 0.3 1 3 10 30 Gate threshold voltage Capacitance C 2 1 Drain-source voltage VDS (V) 0 −80 −40 0 40 80 120 160 Case temperature Tc (°C) PD – Tc 200 50 Dynamic input/output characteristics 20 Common source ID = 7 5 A Tc = 25°C 40 Pulse test Drain power dissipation PD (W) VDS (V) 160 VGS 16 Drain-source voltage VDS 20 VDD = 24 V 12 8 80 40 10 4 10 0 40 80 120 160 200 0 0 40 80 120 160 0 200 Case temperature Tc (°C) Total gate charge Qg (nC) 4 2009-09-29 Gate-source voltage 120 30 6 12 VGS (V) 2SK3439 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 0.00001 Single 0.0001 0.001 0.01 0.1 PDM t T Duty = t/T Rth (ch-c) = 1.0°C/W 1 10 Pulse width tw (s) Safe operating area 300 ID max (pulsed) * 100 μs * 1000 EAS – Tch Avalanche energy EAS (mJ) 100 ID max (continuous) 1 ms * 30 800 600 Drain current ID (A) 10 DC operation Tc = 25°C 400 3 200 1 *: Single nonrepetitive pulse Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature 0.1 0.1 1 0 25 50 75 100 125 150 Channel temperature (initial) Tch (°C) VDSS max 10 100 Drain-source voltage VDS (V) 15 V 0V BVDSS IAR VDD VDS Waveform Test circuit RG = 25 Ω VDD = 24 V, L = 100 μH Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ 5 2009-09-29 2SK3439 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29