2SK3466

2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3466 Chopper Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 50 180 5 5 150 −55 to 150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-97 2-9F1B Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 2.5 Unit °C/W Circuit Configuration 4 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 3 1 2006-11-06 2SK3466 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ID = 2.5 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min ⎯ ⎯ 500 2.0 ⎯ 2.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 1.35 4.0 780 60 200 12 Max ±10 100 ⎯ 4.0 1.50 ⎯ ⎯ ⎯ pF Unit μA μA V V Ω S ⎯ 10 V Output ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ Turn-ON time Switching time Fall time ton tf VGS 0V 25 15 Ω RL = 90 Ω 15 ⎯ ⎯ ⎯ ⎯ ⎯ nC Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge toff Qg Qgs Qgd Duty < 1%, tw = 10 μs = VDD ∼ 225 V − ⎯ ⎯ 60 17 11 6 VDD ∼ 400 V, VGS = 10 V, ID = 5 A − ⎯ ⎯ Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDSF IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1400 9 Max 5 20 −1.7 ⎯ ⎯ Unit A A V ns μC Marking Part No. (or abbreviation code) K3466 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK3466 ID – VDS 5 Common source Tc = 25°C 4 Pulse test 10, 15 6 5.5 5.25 10 Common source Tc = 25°C 8 Pulse test ID – VDS 15 10 6 Drain current ID (A) 3 Drain current ID (A) 5 6 5.5 2 4.75 4 5 2 4.5 1 VGS = 4 V 0 0 2 4 6 8 10 4.5 VGS = 4 V 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 10 Common source VDS = 20 V 8 Pulse test Tc = −55°C 20 VDS – VGS Common source VDS (V) Tc = 25°C 16 Pulse test Drain current ID (A) 25 100 4 Drain-source voltage 6 12 8 ID = 5 A 2 4 2.5 1.2 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ − ID 10 RDS (ON) − ID 10 Tc = −55°C 25 100 Common source Tc = 25°C 5 Pulse test 3 VGS = 10 V 15 1 |Yfs| (S) Common source VDS = 20 V Forward transfer admittance 3 1 0.5 0.3 0.1 0.3 0.5 1 3 5 10 Drain-source ON resistance RDS (ON) (Ω) 5 Pulse test 0.5 0.3 0.1 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 3 2006-11-06 2SK3466 RDS (ON) − Tc 5 Common source VGS = 10 V Pulse test 10 Common source Tc = 25°C Pulse test 3 IDR − VDS Drain-source ON resistance RDS (ON) (Ω) 4 3 1.2 Drain reverse current IDR 2.5 (A) ID = 5 A 1 0.5 0.3 10 5 3 1 VGS = 0, −1 V −0.8 −1.0 −1.2 2 1 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 −0.6 Case temperature Tc (°C) Drain-source voltage VDS (V) Capacitance – VDS 2000 1000 Ciss 5 Vth − Tc Common source VDS = 10 V ID = 1 m A Pulse test Vth (V) Gate threshold voltage 100 (pF) 500 300 4 Capacitance C 3 100 Coss 50 30 Common source VGS = 0 V 10 f = 1 MHz Tc = 25°C 5 0.1 0.3 0.5 1 2 Crss 1 3 5 10 30 50 0 −80 −40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (°C) PD − Tc 80 500 Dynamic input/output characteristics 20 Common source ID = 5 A Tc = 25°C Pulse test 16 VDS VDD = 100 V 300 200 200 400 8 12 Drain power dissipation PD (W) (V) 400 Drain-source voltage VDS 60 40 20 100 VGS 4 0 0 40 80 120 160 200 0 0 5 10 15 20 0 25 Case temperature Tc (°C) Total gate charge Qg (nC) 4 2006-11-06 Gate-source voltage VGS (V) 2SK3466 rth − tw Normalized transient thermal impedance 3 1 0.5 Duty = 0.5 rth (t)/Rth (ch-c) 0.3 0.2 0.1 0.1 0.05 PDM Single pulse t T 0.05 0.02 0.03 0.01 0.01 0.005 0.003 10 μ 30 μ Duty = t/T Rth (ch-c) =2.5°C/W 100 μ 300 μ 1m 3m 10 m 30 m 100 m 300 m 1 3 10 Pulse width tw (s) Safe operating area 100 200 EAS – Tch 30 ID max (pulsed) * 100 μs * 10 Avalanche energy EAS (mJ) 50 160 Drain current ID (A) 5 3 1 0.5 0.3 ID max (continuous) * 1 ms * 120 80 DC operation Tc = 25°C 40 * Single nonrepetitive 0.1 pulse Tc = 25°C 0.05 Curves must be derated 0.03 0.01 1 linearly with increase in temperature. 3 5 10 30 50 VDSS max 100 300 500 1000 0 25 50 75 100 125 150 Channel temperature (initial) Tch (°C) Drain-source voltage VDS (V) 15 V −15 V BVDSS IAR VDD VDS Test circuit RG = 25 Ω VDD = 90 V, L = 12.2 mH Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ 5 2006-11-06 2SK3466 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06