2SK3562_06

2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 6 24 40 345 6 4 150 -55~150 A W mJ A mJ °C °C Unit V V V 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit °C/W °C/W 1 2 Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 16.8 mH, IAR = 6 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 1 2006-11-08 2SK3562 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ∼ 400 V, VGS = 10 V, ID = 6 A − Duty < 1%, tw = 10 μs = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton 10 V VGS 0V 50 Ω ID = 3 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min ⎯ ±30 ⎯ 600 2.0 ⎯ 1.2 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 0.9 5.0 1050 10 110 20 40 35 130 28 16 12 Max ±10 ⎯ 100 ⎯ 4.0 1.25 ⎯ ⎯ ⎯ pF Unit μA V μA V V Ω S ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns RL = 66 Ω VDD ∼ 200 V − ⎯ ⎯ ⎯ ⎯ ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 6 A, VGS = 0 V IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1000 7.0 Max 6 24 −1.7 ⎯ ⎯ Unit A A V ns μC Marking K3562 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-08 2SK3562 ID – VDS 5 COMMON SOURCE Tc = 25°C PULSE TEST 10 15 4.8 10 6 5 4.6 3 4.4 2 4.2 1 VGS = 4 V 0 0 2 4 6 8 10 0 0 10 10,15 5.2 ID – VDS COMMON SOURCE Tc = 25°C PULSE TEST (A) (A) 4 8 5 DRAIN CURRENT ID DRAIN CURRENT ID 6 4.8 4.6 4 4.4 2 4.2 VGS = 4 V 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID – VGS VDS (V) 10 COMMON SOURCE 10 VDS – VGS COMMON SOURCE Tc = 25℃ 8 PULSE TEST (A) 8 VDS = 20 V PULSE TEST DRAIN CURRENT ID 6 DRAIN-SOURCE VOLTAGE 6 ID = 6 A 4 4 Tc = −55°C 2 100 25 0 2 3 1.5 0 2 4 6 8 10 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) ⎪Yfs⎪ – ID FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 100 10 RDS (ON) – ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (mΩ) COMMON SOURCE Tc = 25°C PULSE TEST 10 Tc = −55°C 25 100 1 COMMON SOURCE VDS = 20 V 0.1 0.1 PULSE TEST 1 10 1 VGS = 10 V､15V 0.1 0.1 1 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2006-11-08 2SK3562 RDS (ON) – Tc 5 10 IDR – VDS DRAIN REVERSE CURRENT IDR (A) COMMON SOURCE 5 3 Tc = 25°C PULSE TEST DRAIN-SOURCE ON RESISTANCE RDS (ON) (m Ω) COMMON SOURCE PULSE TEST 4 3 ID = 6 A 2 3 VGS = 10 V 1.5 1 1 0.5 10 0.3 5 VGS = 0, −1 V −0.8 −1 −1.2 3 0.1 0 −0.2 −0.4 1 −0.6 0 −80 −40 0 40 80 120 160 CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE – VDS 10000 5 Vth – Tc (pF) 1000 Ciss GATE THRESHOLD VOLTAGE Vth (V) 4 C 3 CAPACITANCE 100 Coss 2 COMMON SOURCE 1 VDS = 10 V ID = 1 m A PULSE TEST 0 −80 −40 0 40 80 120 160 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 1 0.1 1 3 5 10 Crss 30 50 100 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C) PD – Tc VDS (V) 50 500 DYNAMIC INPUT / OUTPUT CHARACTERISTICS (V) GATE-SOURCE VOLTAGE VGS 20 DRAIN POWER DISSIPATION PD (W) 40 400 VDS VDD = 100 V 200 16 DRAIN-SOURCE VOLTAGE 30 300 12 20 200 VGS 100 400 COMMON SOURCE ID = 6 A Tc = 25°C PULSE TEST 8 10 4 0 0 40 80 120 160 200 0 0 10 20 30 40 0 50 CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC) 4 2006-11-08 2SK3562 rth – tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 PDM SINGLE PULSE 0.01 t T Duty = t/T Rth (ch-c) = 3.125°C/W 0.01 0.001 10μ 100μ 1ｍ 10ｍ 100ｍ 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA 100 ID max (PULSED) * 100 μs * 500 EAS – Tch (A) 10 ID max (CONTINUOUS) * 1 ms * AVALANCHE ENERGY EAS (mJ) 400 300 DRAIN CURRENT ID 1 DC OPERATION Tc = 25°C 200 100 ※ SINGLE NONREPETITIVE 0.1 PULSE Tc=25℃ CURVES MUST BE DERATED LINEARLY WITH INCREASE IN 0 25 50 75 100 125 150 0.01 1 TEMPERATURE. VDSS max 100 1000 CHANNEL TEMPERATURE (INITIAL) Tch (°C) 10 DRAIN-SOURCE VOLTAGE VDS (V) 15 V −15 V BVDSS IAR VDD VDS TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 16.8mH WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ 5 2006-11-08 2SK3562 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-08