2SK3662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII)
2SK3662
Switching Regulator, DC−DC Converter, Motor Drive
Applications
•
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 9.4 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 55 S (typ.)
•
Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
•
Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
(Note 1)
ID
35
Pulse (Note 1)
IDP
105
Drain power dissipation (Tc = 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
204
mJ
Avalanche current
IAR
35
A
EAR
3.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
Repetitive avalanche energy
(Note 3)
A
JEDEC
―
JEITA
TOSHIBA
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
3.57
°C/ W
Thermal resistance, channel to ambient
Rth (ch−a)
62.5
°C/ W
Note 1:
Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 227 μH, IAR = 35 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2SK3662
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
⎯
⎯
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
40
⎯
⎯
VDS = 10 V, ID = 1 mA
1.3
⎯
2.5
VGS = 4 V, ID = 18 A
⎯
12.5
19
VGS = 10 V, ID = 18 A
⎯
9.4
12.5
VDS = 10 V, ID = 18 A
28
55
⎯
⎯
5120
⎯
⎯
300
⎯
⎯
500
⎯
⎯
6
⎯
⎯
19
⎯
Gate threshold voltage
Vth
Drain-source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Turn-on time
ton
4.7 Ω
Switching time
Fall time
tf
Turn-off time
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
VOUT
VDD ≈ 30 V
Duty ≤ 1%, tw = 10 μs
toff
Total gate charge
(gate-source plus gate-drain)
ID = 18 A
10 V
VGS
0V
RL = 1.67 Ω
Drain-source breakdown voltage
VDD ≈ 48 V, VGS = 10 V,
ID = 35 A
V
V
mΩ
S
pF
ns
⎯
20
⎯
⎯
115
⎯
⎯
91
⎯
⎯
70
⎯
⎯
21
⎯
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
(Note 1)
IDR
⎯
⎯
⎯
35
A
(Note 1)
IDRP
⎯
⎯
⎯
105
A
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
VDSF
IDR = 35 A, VGS = 0 V
⎯
⎯
−1.5
V
Reverse recovery time
trr
IDR = 35 A, VGS = 0 V,
⎯
60
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 50 A/μs
⎯
58
⎯
nC
Marking
K3662
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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2SK3662
ID – VDS
ID – VDS
40
100
6
4
6
10
3.5
4
10
Drain current ID (A)
Drain current ID (A)
80
30
3.3
20
VGS = 3 V
10
Common source
Tc = 25°C
Pulse test
4.2
8
3.8
60
3.6
40
3.4
20
Common source
VGS = 3 V
Tc = 25°C
Pulse test
0
0
0.2
0.4
0.6
Drain-source voltage
0.8
0
0
1.0
VDS (V)
1
2
Drain-source voltage
ID – VGS
Common source
VDS = 10 V
Pulse test
60
40
100
20
Tc = −55°C
0
0
1
2
Common source
Tc = 25°C
Pulse test
0.8
0.6
0.4
ID = 35 A
17
0.2
9
25
3
Gate-source voltage
4
0
0
5
VGS (V)
4
⎪Yfs⎪ – ID
16
20
VGS (V)
RDS (ON) – ID
50
Drain-source ON-resistance
RDS (ON) (mΩ)
Common source
VDS = 10 V
Pulse test
(S)
12
8
Gate-source voltage
300
Forward transfer admittance ⎪Yfs⎪
5
VDS – VGS
Drain-source voltage
Drain current ID (A)
80
4
VDS (V)
1.0
VDS (V)
100
3
Tc = −55°C
100
50
25
100
30
Common source
30 Tc = 25°C
Pulse test
4
10
VGS = 10 V
5
3
10
5
1
3
5
10
30
50
1
1
100
Drain current ID (A)
3
5
10
30
50
100
Drain current ID (A)
3
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2SK3662
RDS (ON) – Tc
IDR – VDS
100
(A)
Common source
20 Pulse test
17 A, 9 A
Drain reverse current IDR
Drain-source ON-resistance RDS (ON)
( Ω)
25
ID = 35 A
15
VGS = 4 V
VGS = 10 V
ID = 35 A, 17 A, 9 A
10
5
10
5
3
10
Common source
Tc = 25°C
VGS = 0 V
0
−80
−40
0
40
80
120
1
0
160
−0.2
Case temperature Tc (°C)
−0.4
−0.6
Capacitance – VDS
−1.0
−1.2
−1.4
−1.6
VDS (V)
Vth – Tc
Vth (V)
5
Ciss
1000
Gate threshold voltage
(pF)
−0.8
Drain-source voltage
10000
Capacitance C
Pulse test
Coss
Crss
100
Common source
Common source
VDS = 10 V
I = 1 mA
4 D
Pulse test
3
2
1
VGS = 0 V
f = 1 MHz
10
100
VDS (V)
Drain-source voltage
Drain power dissipation PD (W)
20
10
0
0
40
80
80
120
160
Dynamic input/output characteristics
80
Common source
VDS = 10 A
ID = 1 mA
Pulse test
30
40
VDS (V)
PD – Tc
40
0
Case temperature Tc (°C)
120
60
VDS
Case temperature Tc (°C)
12
12
24
40
8
VDD = 48 V
20
4
VGS
0
0
160
16
Common source
ID = 35 A
Tc = 25°C
Pulse test
40
80
120
VGS (V)
1
Drain-source voltage
−40
Gate-source voltage
10
0.1
0
−80
Ta = 25°C
0
160
Total gate charge Qg (nC)
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2SK3662
rth – tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
3
1
Duty = 0.5
0.3
0.2
0.1
0.1
0.03
0.05
PDM
0.02
t
0.01
Single pulse
T
0.01
0.00
10 μ
Duty = t/T
Rth (ch-c) = 3.57°C/W
100 μ
1m
10 m
Pulse width
100 m
tw
1
(s)
Safe operating area
EAS – Tch
300
250
Avalanche energy EAS (mJ)
ID max (pulsed)*
100
t = 1 ms*
ID max (continuous)
(A)
30
Drain current ID
10
t = 10 ms*
10
3
200
150
100
50
1
0
25
* Single nonrepetitive pulse
Tc = 25°C
0.3
50
0.1
0.1
1
Drain-source voltage
100
125
150
Channel temperature (initial) Tch (°C)
Curves must be derated linearly
with increase in temperature.
75
VDSS max
10
100
VDS (V)
BVDSS
15 V
IAR
−15 V
VDD
Test circuit
RG = 25 Ω
VDD = 25 V, L = 227 μH
5
VDS
Waveform
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
⎝ VDSS − VDD ⎠
2009-12-21
2SK3662
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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