2SK3761

2SK3761 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ) 2SK3761 unit：ｍｍ Switching Regulator Applications 3.84±0.2 3.84±0.2 10.5 max 1 0.5 max 4 .7max 4.7 max 1.3 6.6 max 6.6 max. • • • • Low drain-source ON resistance: R DS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 μA (V DS = 6 00 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 1 .3 13.4 min. 13.4 min 3.9.9 max. max 3 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 600 600 ±30 6 24 74 54 6 7.4 150 - 55~150 W mJ A mJ °C °C Unit V V V A 15.6max. 15.6 max 2 .7 1.5 max 1 .5 max 0.81 0.81 max 0.45 0.45 2.7 2.54 2.54 1 2 3 2 .7 Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1. 2. 3. Gate Drain(HEAT SINK) Source JEDEC JEITA TOSHIBA TO-220AB SC-46 ― Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.68 83.3 Unit °C/W °C/W Weight : 2.0g(typ.) 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 2.6 mH, IAR = 6 A, R G = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 1 2004-02-26 2SK3761 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd V DD ∼ 400 V, V GS = 10 V, ID = 6 A − Duty < 1%, tw = 10 µs = Symbol IGSS V (BR) GSS IDSS V (BR) DSS V th RDS (ON) Yf s  Ciss Crss Coss tr ton 10 V V GS 0V 50 Ω ID = 3 A V OUT RL = 66 Ω V DD ∼ 200 V − V DS = 25 V, V GS = 0 V , f = 1 MHz Test Condition V GS = ±25 V, V DS = 0 V ID = ±10 µA, V GS = 0 V V DS = 600 V, V GS = 0 V ID = 10 mA, V GS = 0 V V DS = 10 V, ID = 1 mA V GS = 10 V, ID = 3 A V DS = 10 V, ID = 3 A Min  ±30  600 2.0  1.2   Typ.      0.9 5.0 1050 10 110 20 40 35 130 28 16 12 Max ±10  100  4.0 1.25    pF Unit µA V µA V V Ω S            ns      nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP V DSF trr Qrr Test Condition   IDR = 6 A, V GS = 0 V IDR = 6 A, V GS = 0 V , dIDR /dt = 100 A/µs Min      Typ.    1000 7 Max 6 24 −1.7   Unit A A V ns µC Marking ※ ※ Lot Number TYPE Date Month (Starting from Alphabet A) Year (Last Number of the Christian Era) K3761 2 2004-02-26 2SK3761 ID – V DS 5 COMMON SOURCE Tc = 2 5°C PULSE TEST 10 15 10 6 5 4.6 3 4.4 2 4.2 1 VGS = 4 V 0 0 0 0 10,15 5.2 ID – V DS COMMON SOURCE Tc = 2 5°C PULSE TEST DRAIN CURRENT D ( A) I DRAIN CURRENT D ( A) I 4 4.8 8 5 6 4.8 4.6 4 4.4 4.2 2 VGS = 4 V 10 10 20 30 40 50 2 4 6 8 DRAIN- SOURCE VOLTAGE VDS ( V) DRAIN- SOURCE VOLTAGE VDS ( V) ID – V GS DRAIN- SOURCE VOLTAGE VDS ( V) 10 COMMON SOURCE 10 V DS – V GS COMMON SOURCE Tc = 2 5℃ 8 PULSE TEST DRAIN CURRENT D ( A) I 8 VDS = 20 V PULSE TEST 6 6 ID = 6 A 4 4 Tc = − 55°C 2 100 25 2 3 1.5 0 0 2 4 6 8 10 0 0 4 8 12 16 20 GATE- SOURCE VOLTAGE VGS ( V) GATE- SOURCE VOLTAGE VGS ( V) Yf s  – ID FORWARD TRANSFER ADMITTANCE Yf s  (S) 100 10 RDS (ON) – ID DRAIN- SOURCE ON RESISTANCE RDS (ON) ( mΩ ) COMMON SOURCE Tc = 2 5°C PULSE TEST 10 Tc = − 55°C 25 100 1 COMMON SOURCE VDS = 20 V PULSE TEST 1 10 1 VGS = 10 V､ 15V 0.1 0.1 0.1 0.1 1 10 DRAIN CURRENT D ( A) I DRAIN CURRENT D ( A) I 3 2004-02-26 2SK3761 RDS (ON) – Tc 5 10 IDR – V DS DRAIN REVERSE CURRENT DR I (A) COMMON SOURCE 5 3 Tc = 2 5°C PULSE TEST DRAIN- SOURCE ON RESISTANCE RDS (ON) ( m Ω ) COMMON SOURCE PULSE TEST 4 3 ID = 6 A 2 3 VGS = 10 V 1.5 1 1 0.5 10 0.3 5 VGS = 0, −1 V −0.8 −1 −1.2 3 0.1 0 −0.2 −0.4 1 −0.6 0 −80 −40 0 40 80 120 160 CASE TEMPERATURE Tc ( C) ° DRAIN- SOURCE VOLTAGE VDS ( V) CAPACITANCE – V DS 10000 5 V th – T c CAPACITANCE C (pF) Ciss 1000 GATE THRESHOLD VOLTAGE V th (V) 4 3 100 Coss 2 COMMON SOURCE 1 VDS = 10 V ID = 1 m A PULSE TEST 0 −80 −40 0 40 80 120 160 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 2 5°C 1 0.1 1 3 5 10 Crss 30 50 100 DRAIN- SOURCE VOLTAGE VDS ( V) CASE TEMPERATURE Tc ( C) ° PD – Tc DRAIN- SOURCE VOLTAGE VDS ( V) 80 500 DYNAMIC INPUT / OUTPUT CHARACTERISTICS GATE- SOURCE VOLTAGE VGS ( V) 20 DRAIN POWER DISSIPATION PD (W) 400 60 VDS VDD = 100 V 200 16 300 12 40 200 VGS 100 400 COMMON SOURCE ID = 6 A Tc = 2 5°C PULSE TEST 8 20 4 0 0 40 80 120 160 0 0 10 20 30 40 0 50 CASE TEMPERATURE Tc ( C) ° TOTAL GATE CHARGE Qg (nC) 4 2004-02-26 2SK3761 r th – tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 PDM SINGLE PULSE 0.05 0.02 0.01 Duty = t/T Rth (ch-c) = 1 .68°C/W 1ｍ 10ｍ 100ｍ 1 10 t T 0.1 0.01 10μ 100μ PULSE WIDTH tw ( s) SAFE OPERATING AREA 100 60 EA S – Tch ID max ( PULSED) * 100 µ s * 50 DRAIN CURRENT D ( A) I AVALANCHE ENERGY EA S (mJ) 10 ID max ( CONTINUOUS) * 1 ms * 40 30 1 DC OPERATION Tc = 2 5°C 20 10 ※ SINGLE NONREPETITIVE PULSE 0.1 CURVES Tc=25 ℃ MUST BE DERATED 0 25 50 75 100 125 150 LINEARLY WITH INCREASE IN TEMPERATURE. CHANNEL TEMPERATURE (INITIAL) Tch ( °C) VDSS max 100 1000 0.01 1 10 15 V DRAIN- SOURCE VOLTAGE VDS ( V) −15 V BVDSS IAR V DD V DS TEST CIRCUIT RG = 25 Ω V DD = 90 V, L = 2.6 mH WAVE FORM Å AS =   1 BVDSS  ⋅ L ⋅ I2 ⋅  B 2 − VDD   VDSS  5 2004-02-26 2SK3761 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-02-26