2SK3767_09

2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 2 5 25 93 2 4 150 -55~150 Unit V V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 5.0 62.5 Unit °C/W °C/W 1 2 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41mH, RG = 25 Ω , IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 1 2009-09-29 2SK3767 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ∼ 400 V, VGS = 10 V, ID = 2 A − 10 V VGS 0V 50 Ω ID = 1A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min ⎯ ±30 ⎯ 600 2.0 ⎯ 0.8 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 3.3 1.6 320 30 100 15 55 20 80 9 5 4 Max ±10 ⎯ 100 ⎯ 4.0 4.5 ⎯ ⎯ ⎯ pF Unit μA V μA V V Ω S ⎯ ⎯ Output RL = 200 Ω VDD ∼ 200 V − ⎯ ⎯ ⎯ ns Switching time ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC Duty ≤ 1%, tw = 10 μs Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1000 3.5 Max 2 5 −1.7 ⎯ ⎯ Unit A A V ns μC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K3767 Part No. (or abbreviation code) environmental matters such as the RoHS compatibility of Product. Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK3767 ID – VDS 2 5.5 1.6 10 6 5.25 4 Common source Tc = 25°C Pulse test ID – VDS 10 6 (A) (A) 3 ID 1.2 5 ID Drain current 5.5 Drain current 2 5.25 5 1 4.75 4.5 VGS = 4V 0 0 4 8 12 16 20 24 0.8 4.75 0.4 VGS = 4V 0 0 4 8 12 16 4.5 Common source Tc = 25°C Pulse test 20 24 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 5 20 VDS – VGS Common source (V) Common source 4 VDS = 20 V Pulse test 3 Tc = 25℃ 16 Pulse test ID VDS Drain current voltage 12 8 Drain current (A) 2 ID = 2 A −55 Tc=100℃ 1 25 0 0 4 1 0.5 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate－source voltage VGS (V) ⎪Yfs⎪ – ID 10 100 RDS (ON) – ID Common source Tc = 25°C Pulse test Forward transfer admittance⎪Yfs⎪ (S) Tc = −55°C 1 100 25 Drain source ON resistance RDS (ON) (Ω) 10 0.1 Common source VDS = 20 V 0.01 0.01 0.1 Pulse test 1 10 VGS=10V 1 0.01 0.1 1 10 Drain current ID (A) Drain current ID (A) 3 2009-09-29 2SK3767 RDS (ON) – Tc 10 Common source 10 Common source IDR – VDS (A) Tc = 25°C Pulse test Drain-source ON resistance RDS (ON) (Ω) VGS =10V 8 pulse test IDR 1 ID=2A 4 0.5 2 1 Drain reverse current 6 0.1 10 3 1 VGS = 0, −1 V 0 -100 -50 0 50 100 150 200 0.01 0 −0.4 −0.8 −1.2 −1.6 Case temperature (°C) Drain-source voltage (V) Capacitance – VDS 1000 Ciss 6 Vth – Tc Common source Vth (V) 5 VDS = 10 V ID = 1 m A Pulse test (pF) 100 4 C Capacitance Coss Gate threshold voltage 3 10 Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 0.1 1 10 100 Crss 2 1 0 −80 −40 0 40 80 120 150 Drian-source voltage VDS (V) Case temperature Tc (°C) PD – Tc 50 800 Dynamic Input / output characteristics 16 (W) (V) PD 40 200V VDS 600 100V 400 VDD = 400V Drain power dissipation Drain-source voltage 8 20 Common source 200 ID = 7.5 A Tc = 25°C Pulse test 0 0 2 4 6 8 10 0 12 4 10 0 0 40 80 120 160 Case temperature Tc (°C) Total gate charge Qg (nC) 4 2009-09-29 Gate-source voltage 30 VGS 12 (V) 2SK3767 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 3 1 0.3 0.2 0.1 0.03 0.01 0.003 0.001 10μ 0.1 0.05 0.02 SINGLE PULSE 0.01 T Duty = t/T Rth (ch-c) = 5℃/W 100μ 1ｍ 10ｍ 100ｍ 1 10 PDM t Duty=0.5 Pulse width tw (s) Safe operating area 100 200 EAS – Tch (mJ) 10 ID max (PULSED) * 100 μs * ID max (CONTINUOUS) * 160 EAS Avalanche energy ID (A) 120 80 Drain current 1 DC OPERATION Tc = 25°C 1 ms * 40 0.1 ※ Single nonrepetitive pulse Tc=25℃ Curves must be derated linearly with increase in temperature. 0 25 50 75 100 125 150 Channel temperature (initial) VDSS max 100 1000 Tch (°C) 0.01 1 10 15 V −15 V BVDSS IAR VDD VDS Darin-source voltage VDS (V) TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 41mH WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ 5 2009-09-29 2SK3767 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29