2SK3842_09

2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3842 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 93 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Pulse(t < 1 ms) = Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 75 300 125 322 75 12.5 150 −55 to150 A Unit V V V W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― SC-97 2-9F1B Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.0 Unit °C/W Circuit Configuration Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. 4 Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 μH, RG = 25 Ω, IAR = 75 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2 3 1 2009-09-29 2SK3842 Electrical Characteristics (Note 4) (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd VDD ∼ 48 V, VGS = 10 V, ID = 75 A − Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton 10 V VGS 0V 4.7 Ω I D = 38 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 38 A VDS = 10 V, ID = 38 A Min ⎯ ⎯ 60 35 2.0 ⎯ 46 ⎯ ⎯ ⎯ ⎯ ⎯ RL = 0.79 Ω ⎯ VDD ∼ 30 V − ⎯ ⎯ ⎯ ⎯ 35 200 196 148 48 ⎯ ⎯ ⎯ ⎯ ⎯ nC Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 4.6 93 12400 700 1100 18 45 Max ±10 100 ⎯ ⎯ 4.0 5.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns pF Unit μA μA V V mΩ S Duty < 1%, tw = 10 μs = Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement. Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1,Note 5) Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition ⎯ ⎯ ⎯ ⎯ IDR1 = 75 A, VGS = 0 V IDR = 75 A, VGS = 0 V, dIDR/dt = 50 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 70 77 Max 75 300 1 4 −1.7 ⎯ ⎯ Unit A A A A V ns nC Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1,Note 5) Note 5: Current flowing between the drain and the S1 pin, when open the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them. Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Part No. (or abbreviation code) Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. K3842 Lot No. Note 4 2 2009-09-29 2SK3842 ID – VDS 100 10 8.0 80 7.0 6.5 60 5.2 40 5.4 5.8 6.0 5.6 Common source Tc = 25°C pulse test 200 10 8.0 160 7.0 ID – VDS 6.5 6.3 6.0 5.8 5.6 80 5.4 5.2 40 VGS = 4.5 V 5.0 VGS = 4.5 V 2.0 0 0 1 2 3 4 5 Common source Tc = 25°C pulse test Drain current ID (A) Drain current ID (A) 120 5.0 20 0 0 0.4 0.8 1.2 1.6 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 160 Common source VDS = 20 V Pulse test 100 1.0 VDS – VGS Common source Tc = 25°C Pulse test VDS (V) Drain-source voltage 0.8 Drain current ID (A) 120 0.6 80 25 0.4 ID = 7 5 A 40 Tc = −55°C 0 0 2 4 6 8 0.2 38 19 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ − ID 1000 Common source VDS = 20 V Pulse test 100 100 100 Common source Tc = 25°C 25 Pulse test RDS (ON) − ID Forward transfer admittance ⎪Yfs⎪ (S) Drain-source ON resistance Tc = −55°C (mΩ) RDS (ON) 10 VGS = 10 V 1 1 10 1 1 10 100 1000 10 100 1000 Drain current ID (A) Drain current ID (A) 3 2009-09-29 2SK3842 RDS (ON) − Tc 10 Common source VGS = 10 V Pulse test 38 6 19 1000 Common source Tc = 25°C Pulse test IDR − VDS Drain-source ON resistance RDS (ON) (mΩ) 8 ID = 7 5 A (A) Drain reverse current IDR 10 100 5 3 4 10 2 1 VGS = 0 V 0 −80 −40 0 40 80 120 160 1 0 0.4 0.8 1.2 1.6 2.0 Case temperature Tc (°C) Drain-source voltage VDS (V) Capacitance – VDS 100000 5 Vth − Tc Vth (V) Gate threshold voltage 4 (pF) Ciss 10000 Capacitance C 3 2 1000 Common source VGS = 0 V f = 1 MHz Tc = 25°C 100 0.1 1 10 Coss 1 Crss 100 0 −80 Common source VDS = 10 V ID = 1 m A Pulse test −40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (°C) PD − Tc 150 50 Dynamic input/output characteristics 25 VDS Drain power dissipation PD (W) VDS (V) 120 40 20 Drain-source voltage VDD = 12 V 24V VGS 10 48V Common source ID = 7 5 A Tc = 25°C Pulse test 0 60 20 10 30 5 0 0 40 80 120 160 0 80 160 240 0 320 Case temperature Tc (°C) Total gate charge Qg (nC) 4 2009-09-29 Gate-source voltage 90 30 15 VGS (V) 2SK3842 rth − tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse PDM t T Duty = t/T Rth (ch-c) = 1.0°C/W 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse width tw (S) Safe operating area 1000 500 300 100 μs * 500 EAS – Tch Avalanche energy EAS (mJ) ID max (pulsed) * 400 I max (continuous) 100 D 1 ms * Drain current ID (A) 300 30 200 10 5 3 DC operation Tc = 25°C 100 0 25 1 0.5 *: Single nonrepetitive pulse Tc = 25°C 50 75 100 125 150 Channel temperature (initial) Tch (°C) 0.3 Curves must be derated linearly with increase in temperature. 0.1 0.1 1 10 VDSS max 100 15 V 0V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 Ω VDD = 25 V, L = 78 μH Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ 5 2009-09-29 2SK3842 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29