2SK3845
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3845
Switching Regulator, DC-DC Converter Applications and Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 4.7 mΩ (typ.) High forward transfer admittance: |Yfs| = 88 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 70 280 125 328 70 12.5 150 −55 to150 Unit V V V A W mJ A mJ °C °C
Pulse (Note 1)
1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC JEITA TOSHIBA ― ― 2-16C1B
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.0 50 Unit °C/W °C/W 1 2
Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 91 μH, RG = 25 Ω, IAR = 70 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2006-11-17
2SK3845
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd VDD ∼ 48 V, VGS = 10 V, ID = 70 A − Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton 50 Ω 10 V VGS 0V ID = 35 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 60V, VGS = 0 V ID = 10mA, VGS = 0 V ID = 10mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 35 A VDS = 10 V, ID = 35 A Min ⎯ ⎯ 60 35 2.0 ⎯ 44 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDD≒30 V ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 4.7 88 12400 700 1100 17 44 35 200 196 148 48 Max ±10 100 ⎯ ⎯ 4.0 5.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit μA μA V V mΩ S
RL = 0.86 Ω
Duty < 1%, tw = 10 μs =
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 70 A, VGS = 0 V IDR = 70 A, VGS = 0 V, dIDR/dt = 50 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 70 77 Max 70 280 −1.5 ⎯ ⎯ Unit A A V ns nC
Marking
TOSHIBA
K3845
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2006-11-17
2SK3845
ID – VDS
100 Common source Tc = 25°C Pulse test 8 60 200 10 6 5 8 160 10 6 5.2
ID – VDS
Common source Tc = 25°C Pulse test 5
80
(A)
ID
ID
(A)
4.5
4.3
120
4.8
Drain current
Drain current
40 VGS = 4 V 20
80
4.5 4.3
40
VGS = 4 V
0
0
0.2
0.4
0.6
0.8
1.0
0
0
1
2
3
4
5
Drain−source voltage
VDS
(V)
Drain−source voltage
VDS
(V)
ID – VGS
160 1.0
VDS – VGS VDS (V)
Common source Tc = 25°C Pulse test
Common source VDS = 20 V Pulse test
0.8
(A) ID
120 100 80 25 Tc = −55°C
Drain−source voltage
0.6
Drain current
0.4
70
40
0.2
35
0
0
2
4
6
8
0
ID = 1 8 A 0 4 8 12 16 20
Gate−source voltage
VGS
(V)
Gate−source voltage
VGS
(V)
⎪Yfs⎪ − ID (S)
1000 Common source VDS = 20 V Pulse test 100 Tc = −55°C 25 100 100 Common source Tc = 25°C Pulse test
RDS (ON) − ID
⎪Yfs⎪
Forward transfer admittance
Drain−source ON resistance RDS (ON) (Ω)
10 VGS = 10, 15 V
10
1 1
1 10 100 1000 1 10 100 1000
Drain current
ID
(A)
Drain current
ID
(A)
3
2006-11-17
2SK3845
RDS (ON) − Tc
10 Common source VGS = 10 V Pulse test 1000
IDR − VDS
Drain−source ON resistance RDS (ON) (Ω)
8 35 18 6
(A)
ID = 7 0 A
IDR
10 100
5
3
4
Drain reverse current
10
1
VGS = 0 V Common source Tc = 25°C Pulse test
2
0
−80
1 −40 0 40 80 120 160
0
0.2
0.4
0.6
0.8
1.0
1.2
Case temperature
Tc
(°C)
Drain−source voltage
VDS
(V)
Capacitance – VDS
100000 5
Vth − Tc Vth (V)
Common source VDS = 10 V ID = 1 m A Pulse test
(pF)
Ciss 10000
4
C
Gate threshold voltage
3
Capacitance
1000 Common source VGS = 0 V f = 1 MHz Tc = 25°C 100 0.1 1 10
Coss
2
1
Crss 100
0 −80
−40
0
40
80
120
160
Drain−source voltage
VDS
(V)
Case temperature
Tc
(°C)
PD − Tc
150 50
Dynamic input/output characteristics
25 VDS 40 20
(W)
Drain power dissipation
Drain−source voltage
90
VDD = 12 V 24V VGS 10 48V Common source ID = 7 0 A Tc = 25°C Pulse test
15
60
20
10
30
5
0
0
40
80
120
160
0
0
80
160
240
0 320
Case temperature
Tc
(°C)
Total gate charge
Qg
(nC)
4
2006-11-17
Gate−source voltage
30
VGS
PD
120
VDS (V)
(V)
2SK3845
rth − tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-c)
1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10 μ 100 μ 1m 10 m 100 m Single Pulse PDM t T Duty = t/T Rth (ch-c) = 1.0°C/W 1 10
Pulse width
tw
(S)
Safe operating area
1000 500 300 ID max (pulsed) * 100 μs * 1 ms * 500
EAS – Tch
Avalanche energy EAS (mJ)
400
100 ID max (continuous)
Drain current ID (A)
300
30
200
10 5 3
DC operation Tc = 25°C
100
0 25 1 0.5 *: Single nonrepetitive pulse Tc = 25°C
50
75
100
125
150
Channel temperature (initial) Tch (°C)
0.3 Curves must be derated linearly with increase in temperature. 0.1 0.1 1
VDSS max 10 100
15 V 0V
BVDSS IAR VDD VDS
Drain-source voltage
VDS (V)
Test circuit
RG = 25 Ω VDD = 25 V, L = 91 μH
Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝
5
2006-11-17
2SK3845
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-17
