2SK3906
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI)
2SK3906
Switching Regulator Applications
Unit: mm
•
Small gate charge: Qg = 60 nC (typ.)
•
•
•
•
•
Fast reverse recovery time: trr = 400 ns (typ.)
Low drain-source ON-resistance: RDS (ON) = 0.27 Ω (typ.)
High forward transfer admittance: |Yfs| = 15S (typ.)
Low leakage current: IDSS = 500 μA (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
20
Pulse
(Note 1)
IDP
80
Drain power dissipation (Tc = 25°C)
PD
150
W
Single-pulse avalanche energy
(Note 2)
EAS
792
mJ
Avalanche current
IAR
20
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Drain current
A
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
―
JEITA
TOSHIBA
SC-65
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
2
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
1
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.46 mH, IAR = 20 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
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2SK3906
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Min
Typ.
Max
Unit
IGSS
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
μA
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
⎯
⎯
V
IDSS
VDS = 600 V, VGS = 0 V
⎯
⎯
500
μA
Gate leakage current
Gate-source breakdown voltage
Test Condition
Drain cutoff current
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 10 A
⎯
0.27
0.33
Ω
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, ID = 10 A
7
15
⎯
S
Input capacitance
Ciss
⎯
4250
⎯
Reverse transfer capacitance
Crss
⎯
10
⎯
Output capacitance
Coss
⎯
420
⎯
⎯
12
⎯
⎯
45
⎯
⎯
10
⎯
⎯
80
⎯
⎯
60
⎯
⎯
50
⎯
⎯
10
⎯
Min
Typ.
Max
Drain-source breakdown voltage
Gate threshold voltage
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
Turn-on time
VGS
ton
0V
tf
Turn-off time
RL = 20 Ω
4.7 Ω
Switching time
Fall time
ID = 10 A
出力
10 V
VDD ≈ 200 V
toff
Duty ≤ 1%, tw = 10 μs
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 20 A
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Unit
Continuous drain reverse current (Note 1)
IDR
⎯
⎯
⎯
20
A
Pulse drain reverse current
IDRP
⎯
⎯
⎯
80
A
(Note 1)
Forward voltage (diode)
VDSF
IDR = 20 A, VGS = 0 V
⎯
⎯
−1.7
V
Reverse recovery time
trr
IDR = 20 A, VGS = 0 V,
⎯
400
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/μs
⎯
2.9
⎯
μC
Marking
TOSHIBA
K3906
Part No.
(or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The
RoHS is the Directive 2002/95/EC of the European Parliament and of
the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
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2009-09-29
2SK3906
ID – VDS
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
8
7
16
ID – VDS
50
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
20
6.5
12
6
8
5.5
4
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
8
40
30
7
20
6.5
10
6
VGS = 5.5 V
VGS = 5 V
0
0
2
4
6
8
0
10
0
DRAIN−SOURCE VOLTAGE VDS (V)
4
8
ID – VGS
DRAIN−SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
25
VDS = 20 V
PULSE TEST
30
Tc = −55°C
100
20
10
0
0
4
6
8
GATE−SOURCE VOLTAGE VGS
COMMON SOURCE
Tc = 25°C
PULSE TEST
16
12
8
ID = 20 A
4
0
2
10
5
0
(V)
⎪Yfs⎪ – ID
DRAIN−SOURCE ON -RESISTANCE
RDS (ON) (mΩ)
FORWARD TRANSFER ADMITTANCE
⎪Yfs⎪ (S)
VDS = 20 V
PULSE TEST
Tc = −55°C
100
25
1
1
8
12
16
20
(V)
RDS (ON) − ID
1000
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
0.1
0.1
4
10
GATE−SOURCE VOLTAGE VGS
100
10
20
VDS – VGS
20
COMMON SOURCE
16
DRAIN−SOURCE VOLTAGE VDS (V)
50
40
12
10
100
VGS = 10 V
100
10
1
DRAIN CURRENT ID (A)
10
100
DRAIN CURRENT ID (A)
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2SK3906
IDR − VDS
RDS (ON) – Tc
100
COMMON SOURCE
VGS = 10 V
PULSE TEST
600
ID = 20 A
400
10
5
200
−80
−40
0
40
80
CASE TEMPERATURE
120
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
10
1
5
3
160
VGS = 0 V
1
0.1
0
−0.4
−0.8
Tc (°C)
5
Vth (V)
1000
GATE THRESHOLD VOLTAGE
Coss
100
Crss
10 COMMON SOURCE
VGS = 0 V
f = 1 MHz
1
10
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
4
3
2
1
0
−80
100
40
80
120
160
Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
PD – Tc
200
450
DRAIN−SOURCE VOLTAGE VDS (V)
PD (W)
0
CASE TEMPERATURE
DRAIN−SOURCE VOLTAGE VDS (V)
DRAIN POWER DISSIPATION
−40
160
120
80
40
120
160
CASE TEMPERATURE
Tc (°C)
40
80
360
16
VDD = 100 V
400
270
12
200
8
180
COMMON SOURCE
VGS
90
ID = 20 A
4
Tc = 25°C
PULSE TEST
0
0
200
20
VDS
(V)
CAPACITANCE C
(pF)
Ciss
Tc = 25°C
1
0.1
−1.6
Vth − Tc
C – VDS
10000
0
0
−1.2
DRAIN−SOURCE VOLTAGE VDS (V)
20
40
60
80
GATE−SOURCE VOLTAGE VGS
800
DRAIN REVERSE CURRENT IDR (A)
DRAIN−SOURCE ON-RESISTANCE
RDS (ON) (mΩ)
1000
0
100
TOTAL GATE CHARGE Qg (nC)
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2SK3906
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
SINGLE PULSE
0.01
t
0.01
T
0.001
10μ
Duty = t/T
Rth (ch-c) = 0.833°C/W
100μ
1m
10m
100m
PULSE WIDTH
1
tw (s)
EAS – Tch
SAFE OPERATING AREA
1000
AVALANCHE ENERGY EAS (mJ)
1000
100 ID max (PULSE) *
100 μs *
DRAIN CURRENT ID (A)
10
ID max (CONTINUOUS)
1 ms *
10
DC OPERATION
Tc = 25℃
800
600
400
200
0
25
1
50
75
100
125
CHANNEL TEMPERATURE (INITIAL)
150
Tch (°C)
0.1
15 V
VDSS max
0.01
1
10
100
BVDSS
IAR
−15 V
1000
VDD
DRAIN−SOURCE VOLTAGE VDS (V)
TEST CIRCUIT
RG = 25 Ω
VDD = 90 V, L = 3.46 mH
5
VDS
WAVEFORM
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
VDSS
DD
⎝
⎠
2009-09-29
2SK3906
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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