2SK3934

2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3934 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.23Ω (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 15 60 50 1.08 15 5.0 150 -55~150 A W 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC J A mJ °C °C ― SC-67 2-10U1B JEITA TOSHIBA Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 62.5 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.16mH, IAR = 15 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1 2006-11-06 2SK3934 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ∼ 400 V, VGS = 10 V, ID = 15 A − Duty < 1%, tw = 10 μs = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton 10 V VGS 0V 50 Ω ID = 7.5 A VOUT RL =26Ω VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.5 A VDS = 10 V, ID = 7.5 A Min ⎯ ±30 ⎯ 500 2.0 ⎯ 2.3 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 0.23 8.2 3100 20 270 70 130 70 280 62 40 22 Max ±10 ⎯ 100 ⎯ 4.0 0.3 ⎯ ⎯ ⎯ pF Unit μA V μA V V Ω S ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC VDD ∼ 200 V − Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 15 A, VGS = 0 V IDR = 15 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1.3 18 Max 15 60 −1.7 ⎯ ⎯ Unit A A V μs μC Marking K3934 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK3934 ID – VDS 20 COMMON SOURCE Tc = 25°C PULSE TEST 10V 8V 12 7V 6.8V 8 5.4V 4 VGS = 5V 50 6.6V COMMON SOURCE Tc = 25°C PULSE TEST ID – VDS 10V 8V 7.5V 30 7V (A) 16 (A) DRAIN CURRENT ID 6.4V 6.2V 6V 5.8V 40 DRAIN CURRENT ID 20 6.5V 6V 10 VGS = 5 V 0 0 8 16 20 0 0 2 4 6 8 10 4 12 DRAIN−SOURCE VOLTAGE VDS (V) DRAIN−SOURCE VOLTAGE VDS (V) ID – VGS VDS (V) 50 COMMON SOURCE 10 VDS – VGS COMMON SOURCE Tc = 25℃ 8 PULSE TEST (A) 40 VDS = 20 V PULSE TEST Tc = 25°C DRAIN CURRENT ID 30 Tc = 100°C 20 Tc = −55°C DRAIN−SOURCE VOLTAGE 6 4 ID = 1 5 A 10 2 ID = 7.5 A ID = 3.8 A 0 0 2 4 6 8 10 0 0 4 8 12 16 20 GATE−SOURCE VOLTAGE VGS (V) GATE−SOURCE VOLTAGE VGS (V) ⎪Yfs⎪ – ID FORWARD TRANSIENT ADMITTANCE ⎪Yfs⎪ (S) 100 COMMON SOURCE VDS = 20 V PULSE TEST 10 100 25 1 Tc = −55°C 1000 RDS (ON) – ID DRAIN−SOURCE ON RESISTANCE RDS (ON) (mΩ) VGS = 10 V 100 COMMON SOURCE Tc = 25°C PULSE TEST 10 1 10 100 0.1 0.1 1 10 100 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2006-11-06 2SK3934 RDS (ON) – Tc (A) 1000 100 IDR – VDS COMMON SOURCE Tc = 25°C PULSE TEST 10 DRAIN−SOURCE ON RESISTANCE RDS (ON) (mΩ) COMMON SOURCE VGS = 10 V 800 PULSE TEST 600 400 ID = 15A 7.5 3.8 DRAIN REVERSE CURRENT IDR 10 1 5 3 1 VGS = 0 V 0.1 0 −0.4 −0.8 −1.2 −1.6 200 0 −80 −40 0 40 80 120 160 CASE TEMPERATURE Tc (°C) DRAIN−SOURCE VOLTAGE VDS (V) C – VDS 10000 Ciss 5 Vth – Tc GATE THRESHOLD VOLTAGE Vth (V) (pF) 4 C 1000 3 CAPACITANCE Coss 100 COMMON SOURCE VGS = 0 V f = 1 MHz 10 0.1 Tc = 25°C 1 10 100 Crss 2 COMMON SOURCE 1 VDS = 10 V ID = 1 m A PULSE TEST 0 −80 −40 0 40 80 120 160 DRAIN−SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C) PD – Tc (W) VDS (V) 80 500 DYNAMIC INPUT/OUTPUT CHARACTERISTICS (V) GATE−SOURCE VOLTAGE VGS 20 PD 400 60 VDS VDD = 100 V 400V 16 DRAIN POWER DISSIPATION DRAIN−SOURCE VOLTAGE 300 12 40 200 VGS 100 200V 8 20 COMMON SOURCE ID = 1 5 A Tc = 25°C PULSE TEST 4 0 0 40 80 120 160 0 0 20 40 60 80 0 100 CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC) 4 2006-11-06 2SK3934 rth – tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 0.01 SINGLE PULSE T Duty = t/T Rth (ch-c) = 2.5°C/W 0.001 10μ 100μ 1ｍ 10ｍ 100ｍ 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA 100 100 μs * ID max (CONTINUOUS) * EAS – Tch 1200 (mJ) AVALANCHE ENERGY EAS ID max (PULSED) * 1000 DRAIN CURRENT ID (A) 10 1 ms * 800 600 1 DC OPERATION Tc = 25°C 400 200 0.1 *SINGLE NONREPETITIVE PULSE Tc = 25°C CURVES MUST BE DERATED VDSS max 0 25 50 75 100 125 150 LINEARLY WITH INCREASE IN 0.01 1 TEMPERATURE 10 100 CHANNEL TEMPERATURE (INITIAL) Tch (°C) BVDSS IAR VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 8.13 mH VDS WAVEFORM 1000 15 V −15 V DRAIN−SOURCE VOLTAGE VDS (V) Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ 5 2006-11-06 2SK3934 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06