2SK3936

2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI) 2SK3936 Switching Regulator Applications • • • • • • Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 380 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance: |Yfs| = 16.5 S (typ.) Low leakage current: IDSS = 500 μA (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 23 92 150 759 23 15 150 -55 to 150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-65 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit °C/W °C/W 2 1 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.44 mH, IAR = 23 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2009-09-29 2SK3936 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 23 A Duty ≤ 1%, tw = 10 μs Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton 10 V VGS 0V 4.7 Ω ID = 11.5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 11.5 A VDS = 10 V, ID = 11.5 A Min ⎯ ±30 ⎯ 500 2.0 ⎯ 8 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 0.2 16.5 4250 10 420 12 45 10 80 60 50 10 Max ±10 ⎯ 500 ⎯ 4.0 0.25 ⎯ ⎯ ⎯ pF Unit μA V μA V V Ω S ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns RL = 17.4 Ω VDD ≈ 200 V ⎯ ⎯ ⎯ ⎯ ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 23 A, VGS = 0 V IDR = 23 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 380 2.4 Max 23 92 -1.7 ⎯ ⎯ Unit A A V ns μC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. TOSHIBA K3936 Part No. (or abbreviation code) Lot No. Note 4 2 2009-09-29 2SK3936 ID – VDS 20 10 8 7 COMMON SOURCE Tc = 25°C PULSE TEST 6.5 50 COMMON SOURCE Tc = 25°C PULSE TEST ID – VDS 10 8 7.5 30 7 20 6.5 10 6 VGS = 5 V 10 0 0 4 8 12 16 20 DRAIN CURRENT ID (A) 12 8 6 4 5.5 VGS = 5 V 0 0 2 4 6 8 DRAIN−SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) 16 40 DRAIN−SOURCE VOLTAGE VDS (V) ID – VGS 50 COMMON SOURCE 20 VDS – VGS DRAIN−SOURCE VOLTAGE VDS (V) 25 COMMON SOURCE Tc = 25°C PULSE TEST DRAIN CURRENT ID (A) 40 VDS = 20 V PULSE TEST 16 30 100 20 Tc = −55°C 12 8 ID = 2 3 A 4 5.75 11.5 10 0 0 0 2 4 6 8 10 0 4 8 12 16 20 GATE−SOURCE VOLTAGE VGS (V) GATE−SOURCE VOLTAGE VGS (V) ⎪Yfs⎪ – ID 100 COMMON SOURCE PULSE TEST 10 Tc = −55°C 25 100 1000 RDS (ON) − ID DRAIN−SOURCE ON-RESISTANCE RDS (ON) (mΩ) COMMON SOURCE Tc = 25°C PULSE TEST VGS = 10 V FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) VDS = 20 V 100 1 0.1 0.1 1 10 100 10 1 10 100 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2009-09-29 2SK3936 RDS (ON) – Tc 1000 IDR − VDS 100 800 DRAIN REVERSE CURRENT IDR (A) DRAIN−SOURCE ON-RESISTANCE RDS (ON) (mΩ) COMMON SOURCE VGS = 10 V PULSE TEST COMMON SOURCE Tc = 25°C PULSE TEST 10 600 400 ID = 2 3 A 200 11.5 0 −80 −40 5.75 10 1 5 3 1 VGS = 0 V 0.1 0 −0.4 −0.8 −1.2 −1.6 0 40 80 120 160 CASE TEMPERATURE Tc (°C) DRAIN−SOURCE VOLTAGE VDS (V) C – VDS 10000 5 Vth − Tc Vth (V) Ciss COMMON SOURCE VDS = 10 V ID = 1 m A PULSE TEST (pF) 4 1000 Coss 100 GATE THRESHOLD VOLTAGE CAPACITANCE C 3 2 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 1 0.1 Crss 1 1 10 100 0 −80 −40 0 40 80 120 160 DRAIN−SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C) PD – Tc 200 500 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 20 PD (W) DRAIN−SOURCE VOLTAGE VDS (V) 16 DRAIN POWER DISSIPATION 120 300 VDD = 100 V 200 400 12 80 200 VGS 100 COMMON SOURCE ID = 2 3 A Tc = 25°C PULSE TEST 0 8 40 4 0 0 40 80 120 160 200 0 20 40 60 80 0 100 CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC) 4 2009-09-29 GATE−SOURCE VOLTAGE VGS 160 400 VDS (V) 2SK3936 rth – tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 PDM t T Duty = t/T Rth (ch-c) = 0.833°C/W 100μ 1m 10m 100m 1 10 0.01 0.001 10μ PULSE WIDTH tw (s) SAFE OPERATING AREA 1000 1000 EAS – Tch AVALANCHE ENERGY EAS (mJ) 800 100 ID max (PULSE) * 100 μs * ID max (CONTINUOUS) 600 DRAIN CURRENT ID (A) 1 ms * 10 400 200 1 DC OPERATION Tc=25℃ 0 25 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (°C) 0.1 *: SINGLE NONREPETITIVE PULSE Tc = 25°C Curves must be derated linearly with increase in temperature VDSS max 100 1000 0.01 15 V −15 V BVDSS IAR VDD VDS 1 10 DRAIN−SOURCE VOLTAGE VDS (V) TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 2.44 mH WAVEFORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ 5 2009-09-29 2SK3936 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29