2SK4014
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK4014
DC-DC Converter, Relay Drive and Motor Drive
Applications
z Low drain-source ON-resistance
: RDS (ON) = 1.6 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
z Low leakage current
Unit: mm
: IDSS = 100 µA (max) (VDS = 720 V)
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
z Enhancement mode
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
(Note 1)
ID
6
A
Pulse (Note 1)
IDP
18
A
Drain power dissipation (Tc = 25°C)
PD
45
W
Single-pulse avalanche energy
(Note 2)
EAS
972
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
2
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
2.78
°C / W
Thermal resistance, channel to ambient
Rth (ch−a)
62.5
°C / W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 49.5 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
Start of commercial production
2005-01
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2SK4014
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = ±30 V, VDS = 0 V
—
—
±10
μA
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
—
V
IDSS
VDS = 720 V, VGS = 0 V
—
—
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
—
—
V
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 3 A
—
1.6
2.0
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
2.5
5.0
—
S
Input capacitance
Ciss
—
1400
—
Reverse transfer capacitance
Crss
—
30
—
Output capacitance
Coss
—
130
—
—
25
—
—
75
—
—
60
—
Rise time
Turn−on time
VDS = 25 V, VGS = 0 V, f = 1 MHz
ID = 3 A
tr
ton
RL = 133 Ω
50 Ω
Switching time
Fall time
pF
ns
tf
VDD ≈ 400 V
Turn−off time
toff
—
220
—
Total gate charge (gate−source
plus gate−drain)
Qg
—
45
—
Gate−source charge
Qgs
—
25
—
Gate−drain (“Miller”) charge
Qgd
—
20
—
VDD ≈ 400 V, VGS = 10 V, ID = 6 A
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
6
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
18
A
Forward voltage (diode)
VDSF
IDR = 6 A, VGS = 0 V
—
—
−1.7
V
Reverse recovery time
trr
—
1100
—
ns
Reverse recovery charge
Qrr
IDR = 6 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
10
—
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K4014
Part No. (or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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2SK4014
ID – VDS
ID – VDS
10
Common source
Tc = 25°C
Pulse test
10
6
6
8
4
5.25
3
5
2
4.75
4.5
1
5.75
8
6
5.5
5.25
4
5
2
4.5
VGS = 4 V
0
0
2
4
6
8
0
0
10
DRAIN−SOURCE VOLTAGE VDS (V)
VGS = 4 V
10
20
DRAIN−SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
12
8
25
0
Tc = −55°C
100
0
2
4
6
GATE−SOURCE VOLTAGE VGS
8
Common source
Tc = 25°C
Pulse test
12
ID = 6 A
8
3
4
1.5
0
(V)
4
8
12
16
GATE−SOURCE VOLTAGE VGS
20
(V)
RDS (ON) − ID
10
100
Common source
Common source
VDS = 10 V
Pulse test
DRAIN−SOURCE ON-RESISTANCE
RDS (ON) (Ω)
FORWARD TRANSFER ADMITTANCE
⎪Yfs⎪ (S)
50
16
0
10
⎪Yfs⎪ − ID
10
Tc = −55°C
100
25
1
0.1
0.1
40
VDS – VGS
20
Common source
VDS = 10 V
Pulse test
4
30
DRAIN−SOURCE VOLTAGE VDS (V)
ID – VGS
16
Common source
Tc = 25°C
Pulse test
10
8
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
5
1
Tc = 25°C
Pulse test
VGS = 10 V
1
0.1
0.1
10
DRAIN CURRENT ID (A)
1
10
DRAIN CURRENT ID (A)
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2SK4014
IDR − VDS
RDS (ON) − Tc
100
Common source
VGS = 10 V
Pulse test
4
Common source
DRAIN REVERSE CURRENT IDR (A)
ID = 6 A
3
3
2
1.5
1
0
−80
−40
0
40
80
CASE TEMPERATURE
Tc = 25°C
Pulse test
10
1
10
0.1
160
120
Tc (°C)
−0.8
−1.2
−1.6
Vth (V)
Common source
VDS = 10 V
ID = 1 mA
Pulse test
4
1000
GATE THRESHOLD VOLTAGE
Coss
100
Crss
10
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
10
100
3
2
1
0
−80
DRAIN−SOURCE VOLTAGE VDS (V)
0
40
80
CASE TEMPERATURE
450
DRAIN−SOURCE VOLTAGE VDS (V)
50
40
30
20
10
40
80
120
CASE TEMPERATURE
120
160
Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
PD − Tc
0
0
−40
160
15
200
300
10
VDD = 400 V
100
150
0
0
200
Common source
ID = 6 A
Tc = 25°C
Pulse test
VDS
(V)
(pF)
VGS = 0 V
Vth − Tc
Ciss
PD (W)
1
5
10000
DRAIN POWER DISSIPATION
3
−0.4
DRAIN−SOURCE VOLTAGE VDS (V)
C − VDS
CAPACITANCE C
5
0
5
VGS
20
40
60
80
GATE−SOURCE VOLTAGE VGS
DRAIN−SOURCE ON-RESISTANCE
RDS (ON) (Ω)
5
0
100
TOTAL GATE CHARGE Qg (nC)
Tc (°C)
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2SK4014
rth – tw
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
SINGLE PULSE
t
0.01 0.01
T
Duty = t/T
Rth (ch-c) = 2.78°C/W
0.001
10μ
100μ
1ｍ
10ｍ
100ｍ
PULSE WIDTH tw
1
(s)
EAS – Tch
SAFE OPERATING AREA
1000
AVALANCHE ENERGY EAS (mJ)
100
DRAIN CURRENT ID (A)
ID max (PULSE) *
10
100 μs *
ID max (CONTINUOUS)
1 ms *
1
DC OPERATION
Tc = 25°C
0.1
0.01
1
10
VDSS max
10
100
1000
800
600
400
200
0
25
10000
50
75
100
125
CHANNEL TEMPERATURE (INITIAL)
DRAIN−SOURCE VOLTAGE VDS (V)
15 V
IAR
VDD
RG = 25 Ω
VDD = 90 V, L = 49.5 mH
5
Tch (°C)
BVDSS
−15 V
TEST CIRCUIT
150
VDS
WAVEFORM
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
VDSS
DD
⎝
⎠
2013-11-01
2SK4014
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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