6N135,6N136
TOSHIBA Photocoupler IRED & Photo IC
6N135, 6N136
Digital Logic Isolation
Line Receiver
Power Supply Control
Switching Power Supply
Transistor Inverter
Unit: mm
The TOSHIBA 6N135 and 6N136 consists of an infrared emitting diode
and a one chip photo diode−transistor.
Each unit is 8−lead DIP package.
•
•
Isolation voltage: 2500 Vrms (min)
High speed: tpHL, tpLH = 0.5 μs (typ.) (RL = 1.9kΩ)
•
TTL compatible
•
If base pin is open, output signal will be noisy by environmental
condition. For this base, TLP550 is suitable
•
UL-recognized: UL 1577, File No.E67349
•
CQC-approved(6N136): GB4943.1,GB8898
Japan and Factory
TOSHIBA
11−10C4S
Weight: 0.54 g (typ.)
Pin Configurations
1
8
2
3
7
6
4
5
1 : N.C.
2 : ANODE
3 : CATHODE
4 : N.C.
5 : EMITTER
6 : COLLECTOR
7 : BASE, ANODE
8 : CATHODE
ICC
IF
VF
2
3
8 VCC
IB
IO
7 VB
6 VO
5 GND
Start of commercial production
© 2019
Toshiba Electronic Devices & Storage Corporation
1
1982-10
2019-06-10
6N135,6N136
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
(Note 1)
IF
25
mA
Pulse forward current
(Note 2)
IFP
50
mA
Total pulse forward current
(Note 3)
IFPT
1
A
VR
5
V
PD
45
mW
IO
8
mA
Peak output current
IOP
16
mA
Emitter−base reverse voltage (pin 5−7)
VEB
5
V
Supply voltage
VCC
−0.5 to 15
V
Output voltage
VO
−0.5 to 15
V
Base current (pin 7)
IB
5
mA
Po
100
mW
Operating temperature range
Topr
−55 to 100
°C
Storage temperature range
Tstg
−55 to 125
°C
LED
Forward current
Reverse voltage
Diode power dissipation
(Note 4)
Detector
Output current
Output power dissipation
(Note 5)
Lead solder temperature (10s)
(Note 6)
Tsol
260
°C
Isolation voltage
(Note 7)
BVS
2500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc.).
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
Derate 0.8 mA above 70°C.
50 % duty cycle, 1 ms pulse width.
Derate 1.6 mA / °C above 70 °C.
Pulse width 1μs, 300pps.
Derate 0.9 mW / °C above 70 °C.
Derate 2 mW / °C above 70 °C.
Soldering portion of lead: Up to 2 mm from the body of the device.
R.H. ≤ 60 %, AC, 60 s
© 2019
Toshiba Electronic Devices & Storage Corporation
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6N135,6N136
Electrical Characteristics
Over Recommended Temperature (Ta = 0°C~70°C unless otherwise noted)
Characteristics
Symbol
Min
(**)Typ.
Max
Unit
7
18
―
%
19
24
―
%
5
13
―
%
15
21
―
%
IF = 16 mA, IO = 1.1 mA
VCC = 4.5 V
―
0.1
0.4
V
IF = 16 mA, IO = 2.4 mA
VCC = 4.5 V
―
0.1
0.4
V
IF = 0 mA, VO = VCC = 5.5 V
Ta = 25 °C
―
3
500
nA
IF = 0 mA, VO = VCC = 15 V
Ta = 2 5 °C
―
0.1
1
µA
IOH
IF = 0 mA, VO = VCC = 15 V
―
―
50
µA
ICCL
IF = 16 mA, VO = open
VCC = 15 V
―
40
―
µA
ICCH
IF = 0 mA, VO = open
VCC = 15 V, Ta = 25 °C
―
0.01
1
µA
ICCH
IF = 0 mA, VO = open
VCC = 15 V
―
―
2
µA
IF = 16m A, Ta = 25 °C
―
1.65
1.7
V
IF = 16 mA
―
−1.9
―
mV / °C
IR = 10 μA, Ta = 25 °C
5
―
―
V
6N135
CTR
6N136
Test Condition
IF = 16 mA, VO = 0.4 V
VCC = 4.5 V, Ta = 25 °C
(Note 8)
IF = 16 mA, VO = 0.5 V
VCC = 4.5 V
(Note 1)
Current transfer ratio
6N135
CTR
6N136
6N135
Logic low output voltage
VOL
6N136
IOH
Logic high output current
Logic low supply current
Logic high supply current
Input forward voltage
Temperature coefficient of
forward voltage
VF
ΔVF / ΔTa
Input reverse breakdown voltage
BVR
Input capacitance
CIN
f = 1 MHz, VF = 0 V
―
60
―
pF
Resistance (input−output)
RI−O
VI−O = 500 V
R.H. ≤ 60 %
(Note 9)
―
1012
―
Ω
Capacitance (input−output)
CI−O
f = 1 MHz, V = 0 V
(Note 9)
―
0.6
―
pF
Transistor DC current gain
hFE
VO = 5 V, IO = 3 mA
―
80
―
―
(**) All typical values are at Ta = 25 °C
© 2019
Toshiba Electronic Devices & Storage Corporation
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2019-06-10
6N135,6N136
Switching Specifications
(unless otherwise specified. Ta = 25°C, VCC = 5V, IF = 16mA)
Characteristics
Propagation delay time
to logic low at output
Propagation delay time
to logic high at output
Symbol
Test
Circuit
tpHL
1
tpLH
1
Test Condition
6N135
6N136
6N135
6N136
Min
Typ.
Max
Unit
RL = 4.1 kΩ
―
0.2
1.5
μs
RL = 1.9 kΩ
―
0.2
0.8
μs
RL = 4.1 kΩ
―
1.0
1.5
μs
RL = 1.9 kΩ
―
0.5
0.8
μs
IF = 0 mA
VCM = 10 Vp−p
RL = 4.1 kΩ
―
1000
―
V / μs
Common mode
transient immunity
at logic high level
output
(Note 10)
6N135
6N136
IF = 0 mA
VCM = 10 Vp−p
RL = 1.9 kΩ
―
1000
―
V / μs
Common mode
transient immunity
at logic low level
output
(Note 10)
6N135
VCM = 10 Vp−p
RL = 4.1 kΩ
IF = 16 mA
―
−1000
―
V / μs
VCM = 10 Vp−p
RL = 1.9 kΩ
IF = 16 mA
―
−1000
―
V / μs
RL = 100 Ω
―
2
―
MHz
Bandwidth
CMH
CML
2
2
6N136
(Note 11)
BW
―
(Note 8)
DC current transfer ratio is defined as the ratio of output collector current, IO, to the forward LED input current,
IF, times 100 %.
(Note 9)
Device considered a two−terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted
together.
(Note 10) Common mode transient immunity in logic high level is the maximum tolerable (positive) dVCM / dt on the leading
edge of the common mode pulse, VCM, to assure that the output will remain in a logic high state (i.e., VO > 2.0
V).
Common mode transient immunity in logic low level is the maximum tolerable (negative) dVCM / dt on the trailing
edge of the common mode pulse signal, VCM, to assure that the output will remain in a logic low state (i.e., VO
< 0.8 V).
(Note 11) The frequency at which the AC output voltage is 3dB below the low frequency asymptote.
© 2019
Toshiba Electronic Devices & Storage Corporation
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2019-06-10
6N135,6N136
Test Circuit 1.
5V
VO
1.5V
IF
MONITOR
1.5V
VOL
tpHL
1
8
2
7
3
6
4
5
5V
RL
0
IF
100Ω
IF
PULSE GEN.
Zo = 50Ω
tf = 5ns
10% DUTY
CYCLE
VO
(*)
CL
tpLH
(*) CL is approximately 15PF which includes probe and stray
wiring capacitance.
Test Circuit 2.
10V
VCM
0V
tr, tf = 8ns
10%
90%
90%
10%
tf
tr
A
B
5V
VO
1
8
2
7
3
6
5V
RL
IF
VO
5
4
VCM
VFF
SWITCH AT A : IF = 0mA
PULSE GEN.
VOL
VO
SWITCH AT B : IF = 16mA
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Toshiba Electronic Devices & Storage Corporation
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2019-06-10
6N135,6N136
ΔVF / ΔTa – IF
I F – VF
100
Ta = 25°C
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C )
Forward current
IF (mA)
50
30
-2.6
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
1.0
1.4
1.2
1.6
-2.2
-2.0
-1.8
-1.6
-1.4
0.1
2.0
1.8
-2.4
0.3
Forward voltage VF (V)
0.5
3
1
Forward current
IOH (1) – Ta
10
5
30
IF (mA)
IO - IF
300
10
5
Output current IO (mA)
High level output current
IOH(1) (nA)
100
50
30
10
5
3
3
1
0.5
0.3
0.1
VCC = 5V
0.05
VO = 0.4V
0.03
Ta = 25°C
1
0.6
0
40
80
120
0.01
0.1
160
0.3
0.5
Ambient temperature Ta (°C)
1
5
10
Forward current
30 50 100
300
IF (mA)
IO / IF – Ta
IO / IF - IF
100
3
1.2
VCC = 5V
VO = 0.4V
1.0
30
Notmalized IO / IF
Current transfer ratio
IO / IF (%)
50
Ta = -25°C
25°C
10
100°C
5
0.8
0.6
Normalized
TO
0.4
:
IF = 16mA
VCC = 4.5V
3
VO = 0.4V
0.2
1
0.3
0.5
1
3
Forward current
5
10
IF (mA)
30
50
0
-40
-20
0
20
40
60
80
100
Ambient temperature Ta (°C)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
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Toshiba Electronic Devices & Storage Corporation
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6N135,6N136
VO – IF
I O – VO
5
VCC = 5V
30mA
Ta = 25°C
IF
25mA
8
Output voltage VO (V )
Output current IO (mA)
10
20mA
15mA
6
10mA
4
IF = 5mA
2
VCC=5V
4
RL
VO
3
Ta = 25℃
RL = 2kΩ
2
3.9Ω
10Ω
1
0
0
0
1
2
3
4
6
5
7
Output voltage VO (V)
0
4
8
12
Forward current
16
20
24
IF (mA)
tpHL, tpLH – RL
5
IF = 16mA
Propagation delay time
tpHL, tpLH (μs)
3
VCC = 5V
tpLH
Ta = 25°C
1
0.5
0.3
tpHL
0.1
1
3
5
10
Load resistance RL
30
50
100
(kΩ)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
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Toshiba Electronic Devices & Storage Corporation
2019-06-10
6N135,6N136
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.
Hardware, software and systems described in this document are collectively referred to as “Product”.
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical
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• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
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OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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2019-06-10