74HC21D(BJ)

74HC21D CMOS Digital Integrated Circuits Silicon Monolithic 74HC21D 1. Functional Description • Dual 4-Input AND Gate 2. General The 74HC21D is a high speed CMOS 4-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 4 stages including buffer an output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) High speed: tpd = 10 ns (typ.) at VCC = 5 V (2) Low power dissipation: ICC = 1.0 µA (max) Ta = 25  (3) Balanced propagation delays: tPLH ≈ tPHL (4) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V 4. Packaging SOIC14 Start of commercial production ©2016 Toshiba Corporation 1 2016-04 2016-05-24 Rev.2.0 74HC21D 5. Pin Assignment 6. Marking 7. IEC Logic Symbol ©2016 Toshiba Corporation 2 2016-05-24 Rev.2.0 74HC21D 8. Truth Table A B C D Y L X X X L X L X X L X X L X L X X X L L H H H H H X: Don't care 9. Absolute Maximum Ratings (Note) Characteristics Supply voltage Symbol Rating Unit VCC -0.5 to 7.0 V Input voltage VIN -0.5 to VCC + 0.5 V VOUT -0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA Output current IOUT ±25 mA VCC/ground current ICC ±50 mA Output voltage Power dissipation PD 500 mW Storage temperature Tstg -65 to 150  Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 10. Operating Ranges (Note) Characteristics Supply voltage Input voltage Symbol Test Condition Rating Unit VCC 2.0 to 6.0 V VIN 0 to VCC V Output voltage VOUT 0 to VCC V Operating temperature Topr Input rise and fall times tr,tf Note: -40 to 85  VCC = 2.0 V 0 to 1000 ns VCC = 4.5 V 0 to 500 VCC = 6.0 V 0 to 400 The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. ©2016 Toshiba Corporation 3 2016-05-24 Rev.2.0 74HC21D 11. Electrical Characteristics 11.1. DC Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Symbol VIH VIL VOH VOL Test Condition   VIN = VIH VIN = VIH or VIL VCC (V) Min Typ. Max Unit 2.0 1.50   V 4.5 3.15   6.0 4.20   2.0   0.50 4.5   1.35 6.0   1.80 2.0 1.9 2.0  4.5 4.4 4.5  6.0 5.9 6.0  IOH = -4 mA 4.5 4.18 4.31  IOH = -5.2 mA 6.0 5.68 5.80  IOL = 20 µA 2.0  0.0 0.1 4.5  0.0 0.1 IOH = -20 µA 6.0  0.0 0.1 IOL = 4 mA 4.5  0.17 0.26 IOL = 5.2 mA V V V 6.0  0.18 0.26 Input leakage current IIN VIN = VCC or GND 6.0   ±0.1 µA Quiescent supply current ICC VIN = VCC or GND 6.0   1.0 µA 11.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Symbol VIH VIL VOH VOL Test Condition   VIN = VIH VIN = VIH or VIL IOH = -20 µA VCC (V) Min Max Unit 2.0 1.50  V 4.5 3.15  6.0 4.20  2.0  0.50 4.5  1.35 6.0  1.80 2.0 1.9  4.5 4.4  6.0 5.9  IOH = -4 mA 4.5 4.13  IOH = -5.2 mA 6.0 5.63  IOL = 20 µA 2.0  0.1 4.5  0.1 6.0  0.1 IOL = 4 mA 4.5  0.33 IOL = 5.2 mA 6.0  0.33 V V V Input leakage current IIN VIN = VCC or GND 6.0  ±1.0 µA Quiescent supply current ICC VIN = VCC or GND 6.0  10.0 µA ©2016 Toshiba Corporation 4 2016-05-24 Rev.2.0 74HC21D 11.3. AC Characteristics (Unless otherwise specified, CL = 15 pF, VCC = 5 V, Ta = 25 , Input: tr = tf = 6 ns) Characteristics Symbol Test Condition Min Output transition time tTLH,tTHL   Propagation delay time tPLH,tPHL   Typ. Max Unit 4 8 ns 10 17 ns 11.4. AC Characteristics (Unless otherwise specified, CL = 50 pF, Ta = 25 , Input: tr = tf = 6 ns) Characteristics Output transition time Symbol Note tTLH,tTHL Propagation delay time tPLH,tPHL Input capacitance CIN Power dissipation capacitance CPD (Note 1) VCC (V) Min Typ. Max Unit 2.0  30 75 ns 4.5  8 15 6.0  7 13 2.0  40 100 4.5  13 20 6.0  11 17   5  pF   25  pF ns Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC(opr) = CPD × VCC × fIN + ICC/2 (per gate) 11.5. AC Characteristics (Unless otherwise specified, CL = 50 pF, Ta = -40 to 85 , Input: tr = tf = 6 ns) Characteristics Output transition time Propagation delay time ©2016 Toshiba Corporation Symbol VCC (V) Min Max Unit tTLH,tTHL 2.0  95 ns 4.5  19 6.0  16 2.0  125 4.5  25 6.0  21 tPLH,tPHL 5 ns 2016-05-24 Rev.2.0 74HC21D Package Dimensions Unit: mm Weight: 0.13 g (typ.) Package Name(s) Nickname: SOIC14 ©2016 Toshiba Corporation 6 2016-05-24 Rev.2.0 74HC21D RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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