74HC245D
CMOS Digital Integrated Circuits
Silicon Monolithic
74HC245D
1. Functional Description
•
Octal Bus Transceiver
2. General
The 74HC245D is high speed CMOS OCTAL BUS TRANSCEIVERs fabricated with silicon gate C2MOS
technology.
They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
They are intended for two-way asynchronous communication between data busses. The direction of data
transmission is determined by the level of the DIR input.
The enable input ( G ) can be used to disable the device so that the busses are effectively isolated.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features (Note)
(1)
High speed: tpd = 10 ns (typ.) at VCC = 6.0 V
(2)
Low power dissipation: ICC = 4.0 µA (max) at Ta = 25
(3)
Balanced propagation delays: tPLH ≈ tPHL
(4)
Wide operating voltage range: VCC(opr) = 2.0 V to 6.0 V
Note:
Do not apply a signal to any bus terminal when it is in the output mode. Damage may result.
All floating (high impedance) bus terminals must have their input levels fixed by means of pull up or pull down
resistors.
4. Packaging
SOIC20
Start of commercial production
©2016 Toshiba Corporation
1
2016-04
2016-08-04
Rev.3.0
74HC245D
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
©2016 Toshiba Corporation
2
2016-08-04
Rev.3.0
74HC245D
8. Truth Table
Input G
X:
Z:
Input DIR
A BUS
B BUS
Output
L
L
L
H
Output
Input
A=B
Input
Output
B=A
H
X
Z
Z
Z
Don't care (L or H)
High impedance
9. Absolute Maximum Ratings (Note)
Characteristics
Symbol
Supply voltage
Input voltage
Note
Rating
Unit
VCC
-0.5 to 7.0
V
VIN
-0.5 to VCC + 0.5
V
VOUT
-0.5 to VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±20
mA
Output current
IOUT
±35
mA
VCC/ground current
ICC
±75
mA
500
mW
-65 to 150
Output voltage
Power dissipation
PD
Storage temperature
Tstg
(Note 1)
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: PD derates linearly with -8 mW/ above 85
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Symbol
Test Condition
Rating
Unit
VCC
2.0 to 6.0
V
VIN
0 to VCC
V
Output voltage
VOUT
0 to VCC
V
Operating temperature
Topr
-40 to 125
Input rise and fall times
tr,tf
0 to 50
µs
Note:
The operating ranges are required to ensure the normal operation of the device. Unused inputs and bus inputs
must be tied to either VCC or GND. Please connect both bus inputs and the bus outputs with VCC or GND when
the I/O of the bus terminal changes by the function. In this case, please note that the output is not short-circuited.
©2016 Toshiba Corporation
3
2016-08-04
Rev.3.0
74HC245D
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Unit
VIH
2.0
1.50
V
4.5
3.15
6.0
4.20
2.0
0.50
4.5
1.35
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
VIL
VOH
VOL
VIN = VIH or VIL
6.0
1.80
2.0
1.9
2.0
4.5
4.4
4.5
6.0
5.9
6.0
IOH = -6 mA
4.5
4.18
4.31
IOH = -7.8 mA
6.0
5.68
5.80
IOL = 20 µA
2.0
0.0
0.1
4.5
0.0
0.1
IOH = -20 µA
VIN = VIH or VIL
6.0
0.0
0.1
IOL = 6 mA
4.5
0.17
0.26
IOL = 7.8 mA
V
V
V
6.0
0.18
0.26
IOZ
VIN = VIH or VIL
VOUT = VCC or GND
6.0
±0.5
µA
Input leakage current
IIN
VIN = VCC or GND
6.0
±0.1
µA
Quiescent supply current
ICC
VIN = VCC or GND
6.0
4.0
µA
3-state output OFF-state
leakage current
11.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state leakage
current
Symbol
Test Condition
VCC (V)
Min
Max
Unit
VIH
2.0
1.50
V
4.5
3.15
6.0
4.20
2.0
0.50
4.5
1.35
6.0
1.80
2.0
1.9
4.5
4.4
VIL
VOH
VOL
VIN = VIH or VIL
VIN = VIH or VIL
IOH = -20 µA
V
V
6.0
5.9
IOH = -6 mA
4.5
4.13
IOH = -7.8 mA
6.0
5.63
IOL = 20 µA
2.0
0.1
4.5
0.1
6.0
0.1
IOL = 6 mA
4.5
0.33
IOL = 7.8 mA
6.0
0.33
±5.0
µA
V
IOZ
VIN = VIH or VIL
VOUT = VCC or GND
6.0
Input leakage current
IIN
VIN = VCC or GND
6.0
±1.0
µA
Quiescent supply current
ICC
VIN = VCC or GND
6.0
40.0
µA
©2016 Toshiba Corporation
4
2016-08-04
Rev.3.0
74HC245D
11.3. DC Characteristics (Unless otherwise specified, Ta = -40 to 125 )
Characteristics
Symbol
High-level input voltage
Test Condition
VIH
Low-level input voltage
VOL
3-state output OFF-state leakage
current
Max
Unit
2.0
1.50
V
4.5
3.15
6.0
4.20
2.0
0.50
4.5
1.35
6.0
1.80
2.0
1.9
4.5
4.4
VOH
Low-level output voltage
Min
VIL
High-level output voltage
VCC (V)
VIN = VIH or VIL
VIN = VIH or VIL
IOH = -20 µA
V
V
6.0
5.9
IOH = -6 mA
4.5
3.7
IOH = -7.8 mA
6.0
5.2
IOL = 20 µA
2.0
0.1
4.5
0.1
6.0
0.1
IOL = 6 mA
4.5
0.4
IOL = 7.8 mA
6.0
0.4
±10.0
µA
V
IOZ
VIN = VIH or VIL
VOUT = VCC or GND
6.0
Input leakage current
IIN
VIN = VCC or GND
6.0
±1.0
µA
Quiescent supply current
ICC
VIN = VCC or GND
6.0
160.0
µA
11.4. AC Characteristics (Unless otherwise specified, Ta = 25 , Input: tr = tf = 6 ns)
Characteristics
Output transition time
Propagation delay time
Symbol
Note
tTLH,tTHL
Test Condition CL (pF)
tPLH,tPHL
50
50
150
3-state output enable time
tPZL,tPZH
RL = 1 kΩ
50
150
3-state output disable time
tPLZ,tPHZ
Input capacitance
CIN
Power dissipation capacitance
CPD
RL = 1 kΩ
DIR, G
(Note 1)
50
VCC (V)
Min
Typ.
Max
Unit
2.0
52
60
ns
4.5
7
12
6.0
6
10
2.0
33
90
4.5
12
18
6.0
10
15
2.0
48
120
4.5
16
24
6.0
14
20
2.0
48
150
4.5
16
30
6.0
14
26
2.0
63
180
4.5
21
36
6.0
18
31
2.0
37
150
4.5
17
30
6.0
15
26
3
pF
12
pF
ns
ns
ns
Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
ICC(opr) = CPD × VCC × fIN + ICC/8 (per bit)
©2016 Toshiba Corporation
5
2016-08-04
Rev.3.0
74HC245D
11.5. AC Characteristics
(Unless otherwise specified, Ta = -40 to 85 , Input: tr = tf = 6 ns)
Characteristics
Output transition time
Propagation delay time
Symbol
Test Condition
CL (pF)
VCC (V)
Min
Max
Unit
tTLH,tTHL
50
2.0
75
ns
4.5
15
6.0
13
2.0
115
4.5
23
6.0
20
2.0
150
4.5
30
6.0
26
2.0
190
4.5
38
6.0
32
2.0
225
4.5
45
6.0
38
2.0
190
4.5
38
6.0
32
tPLH,tPHL
50
150
3-state output enable time
tPZL,tPZH RL = 1 kΩ
50
150
3-state output disable time
tPLZ,tPHZ RL = 1 kΩ
50
ns
ns
ns
11.6. AC Characteristics
(Unless otherwise specified, Ta = -40 to 125 , Input: tr = tf = 6 ns)
Characteristics
Output transition time
Propagation delay time
Symbol
Test Condition
CL (pF)
VCC (V)
Min
Max
Unit
tTLH,tTHL
50
2.0
90
ns
4.5
18
6.0
15
2.0
135
4.5
27
6.0
23
2.0
180
4.5
36
6.0
31
2.0
225
4.5
45
6.0
38
2.0
270
4.5
54
6.0
46
2.0
225
4.5
45
6.0
38
tPLH,tPHL
50
150
3-state output enable time
tPZL,tPZH RL = 1 kΩ
50
150
3-state output disable time
tPLZ,tPHZ RL = 1 kΩ
©2016 Toshiba Corporation
50
6
ns
ns
ns
2016-08-04
Rev.3.0
74HC245D
Package Dimensions
Unit: mm
Weight: 0.51 g (typ.)
Package Name(s)
Nickname: SOIC20
©2016 Toshiba Corporation
7
2016-08-04
Rev.3.0
74HC245D
RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively "Product") without notice.
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
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©2016 Toshiba Corporation
8
2016-08-04
Rev.3.0