74HC4050D

74HC4049D,74HC4050D CMOS Digital Integrated Circuits Silicon Monolithic 74HC4049D,74HC4050D 1. Functional Description • Hex Buffer 74HC4049D: HEX BUFFER/CONVERTER (INVERTING) 74HC4050D: HEX BUFFER/CONVERTER 2. General The 74HC4049D and 74HC4050D are high speed CMOS HEX BUFFERs fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The 74HC4049D is an inverting buffer, while the 74HC4050D is a non-inverting buffer. The internal circuits are composed of 3-stages (74HC4049D) or 2-stages (74HC4050D) of inverter, which provided high noise immunity and stable output. Input protection circuits are different from those of other high speed CMOS IC's. They eliminate the diodes on the VCC side thus providing of logic-level conversion from high-level voltages up to 15 V to low-level voltages. They are useful for battery back up circuits, because input voltage can be applied on IC's which are not biased by VCC. 3. Features (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) High speed: tpd = 8 ns (typ.) at VCC = 6.0 V (3) Low power dissipation: ICC = 1.0 µA (max) at Ta = 25 � (4) Balanced propagation delays: tPLH ≈ tPHL (5) Wide operating voltage range: VCC(opr) = 2.0 V to 6.0 V Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. 4. Packaging SOIC16 Start of commercial production 2020-07 ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 2020-11-17 Rev.4.0 74HC4049D,74HC4050D 5. Pin Assignment 74HC4049D 74HC4050D 6. Marking 74HC4049D 74HC4050D 7. IEC Logic Symbol 74HC4049D 74HC4050D 8. Truth Table Input A Output Y (74HC4049D) L H L H L H ©2016-2020 Toshiba Electronic Devices & Storage Corporation Output Y (74HC4050D) 2 2020-11-17 Rev.4.0 74HC4049D,74HC4050D 9. Internal Equivalent Circuit 74HC4049D 74HC4050D 10. Absolute Maximum Ratings (Note) Characteristics Symbol Supply voltage VCC Input voltage VIN Output voltage Note Rating Unit -0.5 to 7.0 V (Note 1) -0.5 to 18.0 V VOUT -0.5 to VCC + 0.5 V IIK -20 mA Output diode current IOK ±20 mA Output current IOUT ±35 mA VCC/ground current ICC Power dissipation PD Storage temperature Tstg Input diode current (Note 2) ±75 mA 500 mW -65 to 150 � Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: DC input voltage (VIN) specified is measured to GND and is not related to VCC. Recommended operating range is 0 V to 15 V and it is possible to convert logic-levels from 15 V to 5 V or 5 V to 2 V. Note 2: PD derates linearly with -8 mW/� above 85 � ©2016-2020 Toshiba Electronic Devices & Storage Corporation 3 2020-11-17 Rev.4.0 74HC4049D,74HC4050D 11. Operating Ranges (Note) Characteristics Symbol Test Condition Note Rating Unit Supply voltage VCC 2.0 to 6.0 V Input voltage VIN 0 to 15.0 V Output voltage VOUT Operating temperature Topr Input rise and fall times tr,tf 0 to VCC V -40 to 125 � VCC = 2.0 V 0 to 1000 ns VCC = 4.5 V 0 to 500 VCC = 6.0 V 0 to 400 (Note 1) Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. 12. Electrical Characteristics 12.1. DC Characteristics (Unless otherwise specified, T a = 25 �) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Symbol Test Condition VCC (V) Min Typ. Max Unit VIH � 2.0 1.50 � � V 4.5 3.15 � � 6.0 4.20 � � 2.0 � � 0.50 4.5 � � 1.35 VIL VOH VOL Input leakage current IIN Quiescent supply current ICC � VIN = VIH or VIL VIN = VIH or VIL 6.0 � � 1.80 2.0 1.9 2.0 � 4.5 4.4 4.5 � 6.0 5.9 6.0 � IOH = -6 mA 4.5 4.18 4.31 � IOH = -7.8 mA 6.0 5.68 5.80 � IOL = 20 µA 2.0 � 0.0 0.1 4.5 � 0.0 0.1 IOH = -20 µA 6.0 � 0.0 0.1 IOL = 6 mA 4.5 � 0.17 0.26 IOL = 7.8 mA V V V 6.0 � 0.18 0.26 VIN = VCC or GND 6.0 � � ±0.1 µA VIN = 15 V 6.0 � � ±0.5 µA VIN = VCC or GND 6.0 � � 1.0 µA ©2016-2020 Toshiba Electronic Devices & Storage Corporation 4 2020-11-17 Rev.4.0 74HC4049D,74HC4050D 12.2. DC Characteristics (Unless otherwise specified, T a = -40 to 85 �) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Input leakage current Quiescent supply current Symbol Test Condition VCC (V) Min Max Unit VIH � 2.0 1.50 � V 4.5 3.15 � 6.0 4.20 � 2.0 � 0.50 4.5 � 1.35 6.0 � 1.80 2.0 1.9 � 4.5 4.4 � VIL VOH VOL IIN ICC � VIN = VIH or VIL IOH = -20 µA V V 6.0 5.9 � IOH = -6 mA 4.5 4.13 � IOH = -7.8 mA 6.0 5.63 � IOL = 20 µA 2.0 � 0.1 4.5 � 0.1 6.0 � 0.1 IOL = 6 mA 4.5 � 0.33 IOL = 7.8 mA 6.0 � 0.33 VIN = VCC or GND 6.0 � ±1.0 µA VIN = 15 V 6.0 � ±5.0 µA VIN = VCC or GND 6.0 � 10.0 µA VIN = VIH or VIL V 12.3. DC Characteristics (Note) (Unless otherwise specified, T a = -40 to 125 �) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Symbol VIH VOH VOL IIN Quiescent supply current ICC VCC (V) Min Max Unit 2.0 1.50 � V 4.5 3.15 � 6.0 4.20 � 2.0 � 0.50 4.5 � 1.35 6.0 � 1.80 2.0 1.9 � 4.5 4.4 � 6.0 5.9 � IOH = -6 mA 4.5 3.7 � IOH = -7.8 mA 6.0 5.2 � IOL = 20 µA 2.0 � 0.1 4.5 � 0.1 � VIL Input leakage current Note: Test Condition � VIN = VIH or VIL VIN = VIH or VIL IOH = -20 µA 6.0 � 0.1 IOL = 6 mA 4.5 � 0.4 IOL = 7.8 mA V V V 6.0 � 0.4 VIN = VCC or GND 6.0 � ±1.0 µA VIN = 15 V 6.0 � ±5.0 µA VIN = VCC or GND 6.0 � 20.0 µA Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 5 2020-11-17 Rev.4.0 74HC4049D,74HC4050D 12.4. AC Characteristics (Unless otherwise specified, T a = 25 �, Input: t r = t f = 6 ns) Characteristics Output transition time Propagation delay time Symbol Note Test Condition CL (pF) VCC (V) Min Typ. Max Unit � 50 2.0 � 25 60 ns 4.5 � 6 12 6.0 � 5 10 2.0 � 30 75 4.5 � 9 15 6.0 � 8 13 2.0 � 45 100 4.5 � 14 20 6.0 tTLH,tTHL tPLH,tPHL � 50 150 Input capacitance CIN Power dissipation capacitance CPD (Note 1) ns � 12 17 � � 5 10 pF � � 26 � pF Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC(opr) = CPD × VCC × fIN + ICC/6 (per bit) 12.5. AC Characteristics (Unless otherwise specified, T a = -40 to 85 �, Input: t r = t f = 6 ns) Characteristics Output transition time Propagation delay time Symbol Test Condition CL (pF) VCC (V) Min Max Unit tTLH,tTHL � 50 2.0 � 75 ns 4.5 � 15 6.0 � 13 2.0 � 95 4.5 � 19 6.0 � 16 2.0 � 145 4.5 � 29 6.0 � 25 � 10 pF tPLH,tPHL � 50 150 Input capacitance CIN � ns 12.6. AC Characteristics (Note) (Unless otherwise specified, T a = -40 to 125 �, Input: t r = t f = 6 ns) Characteristics Output transition time Propagation delay time Symbol Test Condition CL (pF) VCC (V) Min Max Unit tTLH,tTHL � 50 2.0 � 85 ns 4.5 � 17 6.0 � 15 2.0 � 110 4.5 � 22 6.0 � 18 2.0 � 175 4.5 � 35 6.0 � 31 � 10 tPLH,tPHL � 50 150 Input capacitance Note: CIN � ns pF Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 6 2020-11-17 Rev.4.0 74HC4049D,74HC4050D Package Dimensions Unit: mm Weight: 0.15 g (typ.) Package Name(s) Nickname: SOIC16 ©2016-2020 Toshiba Electronic Devices & Storage Corporation 7 2020-11-17 Rev.4.0 74HC4049D,74HC4050D RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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