74HCU04D(BJ)

74HCU04D CMOS Digital Integrated Circuits Silicon Monolithic 74HCU04D 1. Functional Description • Hex Inverter 2. General The 74HCU04D is a high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Since the internal circuit is composed of a single stage inverter, it can be used in analog applications such as crystal oscillators. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) High speed: tpd = 4 ns (typ.) at VCC = 5 V (2) Low power dissipation: ICC = 1.0 µA (max) Ta = 25  (3) Balanced propagation delays: tPLH ≈ tPHL (4) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V 4. Packaging SOIC14 Start of commercial production ©2016 Toshiba Corporation 1 2016-05 2016-05-25 Rev.2.0 74HCU04D 5. Pin Assignment 6. Marking 7. IEC Logic Symbol ©2016 Toshiba Corporation 2 2016-05-25 Rev.2.0 74HCU04D 8. Truth Table A Y L H H L 9. Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage VCC -0.5 to 7.0 V Input voltage VIN -0.5 to VCC + 0.5 V VOUT -0.5 to VCC + 0.5 V IIK ±20 mA Output diode current IOK ±20 mA Output current IOUT ±25 mA VCC/ground current ICC ±50 mA Power dissipation PD 500 mW Storage temperature Tstg -65 to 150  Output voltage Input diode current Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 10. Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 2.0 to 6.0 V Input voltage VIN 0 to VCC V Output voltage VOUT 0 to VCC V Operating temperature Topr -40 to 85  Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. ©2016 Toshiba Corporation 3 2016-05-25 Rev.2.0 74HCU04D 11. Electrical Characteristics 11.1. DC Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Symbol VIH VIL VOH Test Condition   VIN = VIL Low-level output voltage VOL VIN = VIH VIN = VCC Min Typ. Max Unit 2.0 1.7   V 4.5 3.6   6.0 4.8   2.0   0.3 4.5   0.9 6.0   1.2 2.0 1.8 2.0  4.5 4.0 4.5  6.0 5.5 5.9  IOH = -4 mA 4.5 4.18 4.31  IOH = -5.2 mA 6.0 5.68 5.80  IOL = 20 µA 2.0  0.0 0.2 4.5  0.0 0.5 IOH = -20 µA VIN = GND VCC (V) 6.0  0.1 0.5 IOL = 4 mA 4.5  0.17 0.26 IOL = 5.2 mA V V V 6.0  0.18 0.26 Input leakage current IIN VIN = VCC or GND 6.0   ±0.1 µA Quiescent supply current ICC VIN = VCC or GND 6.0   1.0 µA 11.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Symbol Test Condition VIH  VIL VOH  VIN = VIL VIN = GND Low-level output voltage VOL VIN = VIH VIN = VCC IOH = -20 µA VCC (V) Min Max Unit 2.0 1.7  V 4.5 3.6  6.0 4.8  2.0  0.3 4.5  0.9 6.0  1.2 2.0 1.8  4.5 4.0  6.0 5.5  IOH = -4 mA 4.5 4.13  IOH = -5.2 mA 6.0 5.63  IOL = 20 µA 2.0  0.2 4.5  0.5 6.0  0.5 IOL = 4 mA 4.5  0.33 IOL = 5.2 mA 6.0  0.33 V V V Input leakage current IIN VIN = VCC or GND 6.0  ±1.0 µA Quiescent supply current ICC VIN = VCC or GND 6.0  10.0 µA ©2016 Toshiba Corporation 4 2016-05-25 Rev.2.0 74HCU04D 11.3. AC Characteristics (Unless otherwise specified, CL = 15 pF, VCC = 5 V, Ta = 25 , Input: tr = tf = 6 ns) Characteristics Symbol Test Condition Min Typ. Max Unit Output transition time tTLH,tTHL   4 8 ns Propagation delay time tPLH,tPHL   4 8 ns 11.4. AC Characteristics (Unless otherwise specified, CL = 50 pF, Ta = 25 , Input: tr = tf = 6 ns) Characteristics Output transition time Symbol Note tTLH,tTHL Propagation delay time tPLH,tPHL Input capacitance CIN Power dissipation capacitance CPD (Note 1) VCC (V) Min Typ. Max Unit 2.0  30 75 ns 4.5  8 15 6.0  7 13 2.0  18 60 4.5  6 12 6.0  5 10   9  pF   13  pF ns Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC(opr) = CPD × VCC × fIN + ICC/6 (per gate) 11.5. AC Characteristics (Unless otherwise specified, CL = 50 pF, Ta = -40 to 85 , Input: tr = tf = 6 ns) Characteristics Output transition time Propagation delay time ©2016 Toshiba Corporation Symbol VCC (V) Min Max Unit tTLH,tTHL 2.0  95 ns 4.5  19 6.0  16 2.0  75 4.5  15 6.0  13 tPLH,tPHL 5 ns 2016-05-25 Rev.2.0 74HCU04D Package Dimensions Unit: mm Weight: 0.13 g (typ.) Package Name(s) Nickname: SOIC14 ©2016 Toshiba Corporation 6 2016-05-25 Rev.2.0 74HCU04D RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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