74LCX541FT

74LCX541FT CMOS Digital Integrated Circuits Silicon Monolithic 74LCX541FT 1. Functional Description • Low-Voltage Octal Bus Buffer with 5-V Tolerant Inputs and Outputs 2. General The 74LCX541FT is a high-performance CMOS octal bus buffer. Designed for use in 3.3-V systems, it achieves high-speed operation while maintaining the CMOS low power dissipation. The device is designed for low-voltage (3.3 V) VCC applications, but it could be used to interface to 5 V supply environment for both inputs and outputs. The 74LCX541FT is a non-inverting 3-state buffer having two active-low output enables. When either OE1 or OE2 are high, the terminal outputs are in the high-impedance state. This device is designed to be used with 3-state memory address drivers, etc. All inputs are equipped with protection circuits against static discharge. 3. Features (1) Low-voltage operation: VCC = 1.65 to 3.6 V (2) High-speed operation: tpd = 6.5 ns (max) (VCC = 3.0 to 3.6 V) (3) Output current: |IOH|/IOL = 24 mA (min) (VCC = 3.0 V) (4) Power-down protection provided on all inputs and outputs (5) Pin and function compatible with the 74 series (74LVC/ALVC/ etc.) 541 type 4. Packaging TSSOP20B Start of commercial production ©2018 Toshiba Electronic Devices & Storage Corporation 1 2013-10 2018-10-30 Rev.3.0 74LCX541FT 5. Pin Assignment 6. Marking 7. IEC Logic Symbol ©2018 Toshiba Electronic Devices & Storage Corporation 2 2018-10-30 Rev.3.0 74LCX541FT 8. Truth Table Input OE1 X: Z: Input OE2 Inputs An Outputs H X X Z X H X Z L L H H L L L L Don't care High impedance 9. Absolute Maximum Ratings (Note) Characteristics Supply voltage Input voltage Output voltage Input diode current Symbol VCC VIN VOUT IOK Output current IOUT VCC/ground current Storage temperature Rating Unit -0.5 to 6.5 V -0.5 to 6.5 V (Note 1) -0.5 to 6.5 V (Note 2) -0.5 to VCC + 0.5 IIK Output diode current Power dissipation Note (Note 3) -50 mA ±50 mA ±50 mA PD 180 mW ICC/IGND ±100 mA Tstg -65 to 150  Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Output in OFF state. Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND, VOUT > VCC ©2018 Toshiba Electronic Devices & Storage Corporation 3 2018-10-30 Rev.3.0 74LCX541FT 10. Operating Ranges (Note) Characteristics Symbol Supply voltage Note VCC Rating Unit 1.65 to 3.6 V (Note 1) Input voltage 1.5 to 3.6 VIN Output voltage VOUT Output current IOH,IOL 0 to 5.5 V (Note 2) 0 to 5.5 V (Note 3) 0 to VCC (Note 4) ±24 (Note 5) Operating temperature Topr Input rise and fall times dt/dv mA ±12 -40 to 85  0 to 10 ns/V (Note 6) Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Note 1: Data retention only. Note 2: Output in OFF state. Note 3: High or low state Note 4: VCC = 3.0 to 3.6 V Note 5: VCC = 2.7 to 3.0 V Note 6: VIN = 0.8 to 2.0 V , VCC = 3.0 V 11. Electrical Characteristics 11.1. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 ) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Symbol Test Condition VIH  VIL VOH VOL VCC (V)  VIN = VIH or VIL Max Unit 1.65 to 2.3 VCC × 0.9  V 2.3 to 2.7 1.7  2.7 to 3.6 2.0  1.65 to 2.3  VCC × 0.1 2.3 to 2.7  0.7 2.7 to 3.6  0.8 1.65 to 3.6 VCC - 0.2  IOH = -4 mA 1.65 1.05  IOH = -8 mA 2.3 1.7  IOH = -12 mA 2.7 2.2  IOH = -18 mA 3.0 2.4  IOH = -24 mA 3.0 2.2  IOL = 100 µA 1.65 to 3.6  0.2 IOL = 4 mA 1.65  0.45 IOL = 8 mA 2.3  0.7 IOL = 12 mA 2.7  0.4 IOL = 16 mA 3.0  0.4 IOH = -100 µA VIN = VIH or VIL Min IOL = 24 mA V V V 3.0  0.55 Input leakage current IIN VIN = 0 to 5.5 V 1.65 to 3.6  ±5.0 µA 3-state output OFF-state leakage current IOZ VIN = VIH or VIL VOUT = 0 to 5.5 V 1.65 to 3.6  ±5.0 µA Power-OFF leakage current IOFF VIN/VOUT = 5.5 V 0  10.0 µA Quiescent supply current ICC VIN = VCC or GND 1.65 to 3.6  10.0 µA VIN/VOUT = 3.6 to 5.5 V 1.65 to 3.6  ±10.0 Quiescent supply current ∆ICC VIH = VCC - 0.6 V (per input) 2.7 to 3.6  500 ©2018 Toshiba Electronic Devices & Storage Corporation 4 µA 2018-10-30 Rev.3.0 74LCX541FT 11.2. AC Characteristics (Unless otherwise specified, Ta = -40 to 85 ) Characteristics Propagation delay time 3-state output enable time 3-state output disable time Output skew Symbol Note tPLH,tPHL Test Condition See 11.5 AC Test Circuit, Table 11.5.1, Fig. 11.6.1, Table 11.6.1 tPZL,tPZH See 11.5 AC Test Circuit, Table 11.5.1, Fig. 11.6.2, Table 11.6.1 tPLZ,tPHZ See 11.5 AC Test Circuit, Table 11.5.1, Fig. 11.6.2, Table 11.6.1 tosLH,tosHL (Note 1)  VCC (V) Min Max Unit 1.8 ± 0.15  25.0 ns 2.5 ± 0.2  8.5 2.7  7.5 3.3 ± 0.3 1.5 6.5 1.8 ± 0.15  34.0 2.5 ± 0.2  17.0 2.7  9.5 3.3 ± 0.3 1.5 8.5 1.8 ± 0.15  32.0 2.5 ± 0.2  16.0 2.7  8.5 3.3 ± 0.3 1.5 7.5 2.7   3.3 ± 0.3  1.0 ns ns ns Note 1: Parameter guaranteed by design. (tosLH = |tPLHm-tPLHn|, tosHL = |tPHLm-tPHLn|) 11.3. Dynamic Switching Characteristics (Unless otherwise specified, Ta = 25 , Input: tr = tf = 2.5 ns, CL = 50 pF, RL = 500 Ω) Characteristics Symbol Test Condition VCC (V) Typ. Unit Quiet output maximum dynamic VOL VOLP VIH = 3.3 V, VIL = 0 V 3.3 0.8 V Quiet output minimum dynamic VOL |VOLV| VIH = 3.3 V, VIL = 0 V 3.3 0.8 V VCC (V) Typ. Unit 3.3 7 pF 3.3 8 pF 3.3 40 pF 11.4. Capacitive Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Input capacitance Symbol Note Test Condition CIN Output capacitance COUT Power dissipation capacitance CPD (Note 1) fIN = 10 MHz Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC(opr)= CPD × VCC × fIN + ICC/8 (per bit) ©2018 Toshiba Electronic Devices & Storage Corporation 5 2018-10-30 Rev.3.0 74LCX541FT 11.5. AC Test Circuit Table 11.5.1 Parameter for AC Test Circuit Parameter Switch Test Condition tPLH, tPHL OPEN  tPLZ, tPZL 6.0 V VCC = 3.3 ± 0.3 V VCC = 2.7 V VCC × 2 VCC = 2.5 ± 0.2 V VCC = 1.8 ± 0.15 V tPHZ, tPZH ©2018 Toshiba Electronic Devices & Storage Corporation GND 6  2018-10-30 Rev.3.0 74LCX541FT 11.6. AC Waveform Fig. 11.6.1 tPLH, tPHL Fig. 11.6.2 tPLZ, tPHZ, tPZL, tPZH Table 11.6.1 AC Waveform Symbols Input Output Load Symbol VCC = 3.3 ± 0.3 V VCC = 2.7 V VCC = 2.5 ± 0.2 V VCC = 1.8 ± 0.15 V VIH 2.7 V VCC VCC VIM 1.5 V VCC/2 VCC/2 tr, tf 2.5 ns 2.0 ns 2.0 ns VOM 1.5 V VOH/2 VOH/2 VX VOL + 0.3 V VOL + 0.15 V VOL + 0.15 V VY VOH - 0.3 V VOH - 0.15 V VOH - 0.15 V CL 50 pF 30 pF 30 pF RL 500 Ω 500 Ω 1 kΩ ©2018 Toshiba Electronic Devices & Storage Corporation 7 2018-10-30 Rev.3.0 74LCX541FT Package Dimensions Unit: mm Weight: 0.071 g (typ.) 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