74VHC9125FT,74VHC9126FT
CMOS Digital Integrated Circuits
Silicon Monolithic
74VHC9125FT,74VHC9126FT
1. Functional Description
•
5-Bit Universal Schmitt Buffer with 3-State Outputs
2. General
The 74VHC9125FT/74VHC9126FT are an ultra-high-speed 5-bit Schmitt buffer fabricated using silicon-gate
CMOS technology. The 74VHC9125FT/74VHC9126FT combines low power consumption of CMOS with Schottky
TTL speeds.
Y1 to Y4 outputs can be put in the high-impedance state by placing a logic HIGH on the Enable (G) input. The
CONT input determines the logical inversion of data. A logic LOW on the CONT input configures the
74VHC9125FT/74VHC9126FT as an inverter; a logic HIGH on the CONT input configures the
74VHC9125FT/74VHC9126FT as a buffer.
74VHC9125FT Y5 output is an inverting type, and the 74VHC9126FT Y5 output is a non-inverting type.
All the inputs have hysteresis between the positive-going and negative-going thresholds. Thus the
74VHC9125FT/74VHC9126FT are capable of squaring up transitions of slowly changing input signals and
provides an improved noise immunity.
Additionally, all the inputs have a newly developed protection circuit without a diode returned to VCC. This
enables the inputs to be tolerant of up to 5 volts even when power supply is down. The input power-down protection
capability makes the 74VHC9125FT/74VHC9126FT ideal for a wide range of applications, such as interfacing
between different voltages, voltage translation from 5 V to 3 V and battery back-up circuits.
3. Features
(1)
AEC-Q100 (Rev. H) (Note 1)
(2)
Wide operating temperature range: Topr = -40 to 125
(3)
High speed: tpd = 5.0 ns (typ.) at VCC = 5.0 V
(4)
Low supply current: ICC = 2.0 µA (max) (Ta = 25 )
(5)
All inputs are provided with power-down protection.
(6)
Symmetrical rise and fall delays: tPLH ≈ tPHL
(7) Wide operating voltage range: VCC(opr) = 2.0 V to 5.5 V
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
Start of commercial production
©2016-2018
Toshiba Electronic Devices & Storage Corporation
1
2014-06
2018-06-18
Rev.3.0
74VHC9125FT,74VHC9126FT
4. Packaging
TSSOP14B
5. Pin Assignment
74VHC9125FT
74VHC9126FT
6. Marking
74VHC9125FT
©2016-2018
Toshiba Electronic Devices & Storage Corporation
74VHC9126FT
2
2018-06-18
Rev.3.0
74VHC9125FT,74VHC9126FT
7. Truth Table
X:
Z:
Don't care (L or H)
High impedance
8. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Symbol
Note
Rating
Unit
-0.5 to 7.0
V
VIN
-0.5 to 7.0
V
VOUT
-0.5 to VCC + 0.5
V
VCC
Input voltage
Output voltage
Input diode current
IIK
-20
mA
Output diode current
IOK
±20
mA
Output current
IOUT
±25
mA
VCC/ground current
ICC
±75
mA
180
mW
-65 to 150
Power dissipation
PD
Storage temperature
Tstg
(Note 1)
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: 180 mW in the range of Ta = -40 to 85 . From Ta = 85 to 125 a derating factor of -3.25 mW/ shall be
applied until 50 mW.
9. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Symbol
Rating
Unit
VCC
2.0 to 5.5
V
VIN
0 to 5.5
V
Output voltage
VOUT
0 to VCC
V
Operating temperature
Topr
-40 to 125
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
©2016-2018
Toshiba Electronic Devices & Storage Corporation
3
2018-06-18
Rev.3.0
74VHC9125FT,74VHC9126FT
10. Electrical Characteristics
10.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Positive threshold voltage
Negative threshold voltage
Hysteresis voltage
High-level output voltage
Low-level output voltage
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Unit
VP
3.0
2.20
V
4.5
3.15
5.5
3.85
3.0
0.90
4.5
1.35
5.5
1.65
3.0
0.30
1.20
4.5
0.40
1.40
5.5
0.50
1.60
2.0
1.9
2.0
3.0
2.9
3.0
VN
VH
VOH
VOL
VIN = VIH or VIL
VIN = VIH or VIL
IOH = -50 µA
4.5
4.4
4.5
IOH = -4 mA
3.0
2.58
IOH = -8 mA
4.5
3.94
IOL = 50 µA
2.0
0.0
0.1
3.0
0.0
0.1
4.5
0.0
0.1
IOL = 4 mA
3.0
0.36
IOL = 8 mA
4.5
0.36
V
V
V
V
3-state output OFF-state
leakage current
IOZ
VIN = VIH or VIL
VOUT = VCC or GND
5.5
±0.25
µA
Input leakage current
IIN
VIN = 5.5 V or GND
0 to 5.5
±0.1
µA
Quiescent supply current
ICC
VIN = VCC or GND
5.5
2.0
µA
©2016-2018
Toshiba Electronic Devices & Storage Corporation
4
2018-06-18
Rev.3.0
74VHC9125FT,74VHC9126FT
10.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics
Positive threshold voltage
Negative threshold voltage
Hysteresis voltage
High-level output voltage
Low-level output voltage
Symbol
Test Condition
VCC (V)
Min
Max
Unit
VP
3.0
2.20
V
4.5
3.15
5.5
3.85
3.0
0.90
4.5
1.35
5.5
1.65
3.0
0.30
1.20
4.5
0.40
1.40
5.5
0.50
1.60
2.0
1.9
3.0
2.9
4.5
4.4
IOH = -4 mA
3.0
2.48
IOH = -8 mA
4.5
3.80
IOL = 50 µA
2.0
0.1
3.0
0.1
VN
VH
VOH
VOL
VIN = VIH or VIL
VIN = VIH or VIL
IOH = -50 µA
4.5
0.1
IOL = 4 mA
3.0
0.44
IOL = 8 mA
V
V
V
V
4.5
0.44
3-state output OFF-state
leakage current
IOZ
VIN = VIH or VIL
VOUT = VCC or GND
5.5
±2.50
µA
Input leakage current
IIN
VIN = 5.5 V or GND
0 to 5.5
±1.0
µA
Quiescent supply current
ICC
VIN = VCC or GND
5.5
20.0
µA
©2016-2018
Toshiba Electronic Devices & Storage Corporation
5
2018-06-18
Rev.3.0
74VHC9125FT,74VHC9126FT
10.3. DC Characteristics (Unless otherwise specified, Ta = -40 to 125 )
Characteristics
Positive threshold voltage
Negative threshold voltage
Hysteresis voltage
High-level output voltage
Low-level output voltage
Symbol
Test Condition
VP
Max
Unit
3.0
2.20
V
4.5
3.15
5.5
3.85
3.0
0.90
4.5
1.35
5.5
1.65
3.0
0.30
1.20
4.5
0.40
1.40
5.5
0.50
1.60
2.0
1.9
3.0
2.9
4.5
4.4
IOH = -4 mA
3.0
2.40
IOH = -8 mA
4.5
3.70
IOL = 50 µA
2.0
0.1
3.0
0.1
VH
VOL
Min
VN
VOH
VCC (V)
VIN = VIH or VIL
IOH = -50 µA
VIN = VIH or VIL
4.5
0.1
IOL = 4 mA
3.0
0.55
IOL = 8 mA
V
V
V
V
4.5
0.55
3-state output OFF-state
leakage current
IOZ
VIN = VIH or VIL
VOUT = VCC or GND
5.5
±10.0
µA
Input leakage current
IIN
VIN = 5.5 V or GND
0 to 5.5
±2.0
µA
Quiescent supply current
ICC
VIN = VCC or GND
5.5
40.0
µA
©2016-2018
Toshiba Electronic Devices & Storage Corporation
6
2018-06-18
Rev.3.0
74VHC9125FT,74VHC9126FT
10.4. AC Characteristics (Unless otherwise specified, Ta = 25 , Input: tr = tf = 3 ns)
Characteristics
Propagation delay time
(A1 to A4 - Y1 to Y4)
Symbol
Note
tPLH,tPHL
Test
Condition
VCC (V)
CL (pF)
Min
Typ.
3.3 ± 0.3
15
50
15
50
15
50
15
6.5
8.0
50
10.5
12.5
15
6.0
8.0
50
9.0
12.5
15
5.0
5.5
50
7.0
8.5
15
6.0
8.0
50
10.5
13.5
15
4.5
5.5
50
9.0
10.5
3.3 ± 0.3
50
12.5
13.5
5.0 ± 0.5
50
9.0
9.5
3.3 ± 0.3
50
1.5
5.0 ± 0.5
50
1.0
5.0 ± 0.5
Propagation delay time
(CONT - Y1 to Y4)
tPLH,tPHL
3.3 ± 0.3
5.0 ± 0.5
Propagation delay time
(A5 - Y5)
tPLH,tPHL
3.3 ± 0.3
5.0 ± 0.5
3-state output enable time
tPZL,tPZH
RL = 1 kΩ
3.3 ± 0.3
5.0 ± 0.5
3-state output disable time
Output skew
(A1 to A4 - Y1 to Y4)
tPLZ,tPHZ
tosLH,
tosHL
Input capacitance
RL = 1 kΩ
(Note 1)
Max
Unit
6.0
8.0
ns
9.0
12.5
5.0
5.5
7.0
8.5
8.5
11.5
13.0
17.0
ns
ns
ns
ns
ns
CIN
4
10
pF
Output capacitance
COUT
6
pF
Power dissipation capacitance
CPD
10
pF
(Note 2) fIN = 1 MHz
Note 1: Parameter guaranteed by design. (tosLH = |tPLHm-tPLHn|, tosHL = |tPHLm-tPHLn|)
Note 2: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
ICC(opr) = CPD × VCC × fIN + ICC/5 (per bit)
©2016-2018
Toshiba Electronic Devices & Storage Corporation
7
2018-06-18
Rev.3.0
74VHC9125FT,74VHC9126FT
10.5. AC Characteristics
(Unless otherwise specified, Ta = -40 to 85 , Input: tr = tf = 3 ns)
Characteristics
Propagation delay time
(A1 to A4 - Y1 to Y4)
Symbol
Note
tPLH,tPHL
Test
Condition
VCC (V)
CL (pF)
Min
Max
Unit
3.3 ± 0.3
15
1.0
10.0
ns
50
1.0
15.0
15
1.0
7.0
50
1.0
10.0
15
1.0
13.5
50
1.0
20.5
15
1.0
9.5
50
1.0
15.0
15
1.0
10.0
50
1.0
15.0
15
1.0
7.0
50
1.0
10.0
15
1.0
9.5
50
1.0
16.5
15
1.0
6.5
50
1.0
12.5
3.3 ± 0.3
50
1.0
16.0
5.0 ± 0.5
50
1.0
11.0
3.3 ± 0.3
50
1.5
5.0 ± 0.5
50
1.0
10
5.0 ± 0.5
Propagation delay time
(CONT - Y1 to Y4)
tPLH,tPHL
3.3 ± 0.3
5.0 ± 0.5
Propagation delay time
(A5 - Y5)
tPLH,tPHL
3.3 ± 0.3
5.0 ± 0.5
3-state output enable time
tPZL,tPZH
RL = 1 kΩ
3.3 ± 0.3
5.0 ± 0.5
3-state output disable time
Output skew
(A1 to A4 - Y1 to Y4)
tPLZ,tPHZ
RL = 1 kΩ
tosLH,tosHL (Note 1)
Input capacitance
CIN
ns
ns
ns
ns
ns
pF
Note 1: Parameter guaranteed by design. (tosLH = |tPLHm-tPLHn|, tosHL = |tPHLm-tPHLn|)
©2016-2018
Toshiba Electronic Devices & Storage Corporation
8
2018-06-18
Rev.3.0
74VHC9125FT,74VHC9126FT
10.6. AC Characteristics
(Unless otherwise specified, Ta = -40 to 125 , Input: tr = tf = 3 ns)
Characteristics
Propagation delay time
(A1 to A4 - Y1 to Y4)
Symbol
Note
tPLH,tPHL
Test
Condition
VCC (V)
CL (pF)
Min
Max
Unit
3.3 ± 0.3
15
1.0
11.5
ns
50
1.0
17.0
15
1.0
8.0
50
1.0
11.0
15
1.0
15.0
50
1.0
23.0
15
1.0
10.5
50
1.0
17.0
15
1.0
11.5
50
1.0
17.0
15
1.0
8.0
50
1.0
11.0
15
1.0
10.5
50
1.0
18.5
15
1.0
7.5
50
1.0
14.0
3.3 ± 0.3
50
1.0
18.0
5.0 ± 0.5
50
1.0
12.0
3.3 ± 0.3
50
1.5
5.0 ± 0.5
50
1.0
10
5.0 ± 0.5
Propagation delay time
(CONT - Y1 to Y4)
tPLH,tPHL
3.3 ± 0.3
5.0 ± 0.5
Propagation delay time
(A5 - Y5)
tPLH,tPHL
3.3 ± 0.3
5.0 ± 0.5
3-state output enable time
tPZL,tPZH
RL = 1 kΩ
3.3 ± 0.3
5.0 ± 0.5
3-state output disable time
Output skew
(A1 to A4 - Y1 to Y4)
tPLZ,tPHZ
RL = 1 kΩ
tosLH,tosHL (Note 1)
Input capacitance
CIN
ns
ns
ns
ns
ns
pF
Note 1: Parameter guaranteed by design. (tosLH = |tPLHm-tPLHn|, tosHL = |tPHLm-tPHLn|)
11. Internal Equivalent Circuit
©2016-2018
Toshiba Electronic Devices & Storage Corporation
9
2018-06-18
Rev.3.0
74VHC9125FT,74VHC9126FT
Package Dimensions
Unit: mm
Weight: 0.054 g (typ.)
Package Name(s)
Nickname: TSSOP14B
©2016-2018
Toshiba Electronic Devices & Storage Corporation
10
2018-06-18
Rev.3.0
74VHC9125FT,74VHC9126FT
RESTRICTIONS ON PRODUCT USE
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Hardware, software and systems described in this document are collectively referred to as "Product".
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
©2016-2018
Toshiba Electronic Devices & Storage Corporation
11
2018-06-18
Rev.3.0