74VHC9151FT(BJ)

74VHC9151FT,74VHC9152FT CMOS Digital Integrated Circuits Silicon Monolithic 74VHC9151FT,74VHC9152FT 1. Functional Description 74VHC9151FT: 9-BIT SCHMITT BUFFER 74VHC9152FT: 9-BIT SCHMITT INVERTER 2. General The 74VHC9151FT/74VHC9152FT are an ultra-high-speed 9-bit Schmitt Buffer / Inverter fabricated using silicon-gate CMOS technology. The 74VHC9151FT/74VHC9152FT combines low power consumption of CMOS with Schottky TTL speeds. 74VHC9151FT output is a non-inverting type and the 74VHC9152FT output is an inverting type. All the inputs have hysteresis between the positive-going and negative-going thresholds. Thus the 74VHC9151FT/74VHC9152FT are capable of squaring up transitions of slowly changing input signals and provides an improved noise immunity. Additionally, all the inputs have a newly developed protection circuit without a diode returned to VCC. This enables the inputs to be tolerant of up to 5 volts even when power supply is down. The input power-down protection capability makes the 74VHC9151FT/74VHC9152FT ideal for a wide range of applications, such as interfacing between different voltages, voltage translation from 5 V to 3 V and battery backup circuits. 3. Features (1) AEC-Q100 (Rev. H) (Note 1) (2) Wide operating temperature range: Topr = -40 to 125  (3) High speed: tpd = 3.6 ns (typ.) at VCC = 5.0 V (4) Low power dissipation: ICC = 4.0 µA (max) at Ta = 25  (5) Power down protection is provided on all inputs. (6) Balanced propagation delays: tPLH ≈ tPHL (7) Wide operating voltage range: VCC(opr) = 2.0 V to 5.5 V Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales representative. 4. Packaging TSSOP20B Start of commercial production ©2016-2018 Toshiba Electronic Devices & Storage Corporation 1 2014-06 2018-06-18 Rev.3.0 74VHC9151FT,74VHC9152FT 5. Pin Assignment 74VHC9151FT 74VHC9152FT 6. Marking 74VHC9151FT 74VHC9152FT 7. Truth Table Y 74VHC9151FT Y 74VHC9152FT L L H H H L A ©2016-2018 Toshiba Electronic Devices & Storage Corporation 2 2018-06-18 Rev.3.0 74VHC9151FT,74VHC9152FT 8. Absolute Maximum Ratings (Note) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 7.0 V Input voltage VIN -0.5 to 7.0 V VOUT -0.5 to VCC + 0.5 V IIK -20 mA Output diode current IOK ±20 mA Output current IOUT ±25 mA VCC/ground current ICC Power dissipation PD Storage temperature Tstg Output voltage Input diode current (Note 1) ±75 mA 180 mW -65 to 150  Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: 180 mW in the range of Ta = -40 to 85 . From Ta = 85 to 125  a derating factor of -3.25 mW/ shall be applied until 50 mW. 9. Operating Ranges (Note) Characteristics Supply voltage Input voltage Symbol Rating Unit VCC 2.0 to 5.5 V VIN 0 to 5.5 V Output voltage VOUT 0 to VCC V Operating temperature Topr -40 to 125  Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. ©2016-2018 Toshiba Electronic Devices & Storage Corporation 3 2018-06-18 Rev.3.0 74VHC9151FT,74VHC9152FT 10. Electrical Characteristics 10.1. DC Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Positive threshold voltage Negative threshold voltage Hysteresis voltage High-level output voltage Low-level output voltage Symbol Test Condition VCC (V) Min Typ. Max Unit VP  3.0   2.20 V 4.5   3.15 5.5   3.85 3.0 0.90   4.5 1.35   5.5 1.65   3.0 0.30  1.20 4.5 0.40  1.40 5.5 0.50  1.60 2.0 1.9 2.0  3.0 2.9 3.0  VN  VH VOH VOL  VIN = VIH or VIL VIN = VIH or VIL IOH = -50 µA 4.5 4.4 4.5  IOH = -4 mA 3.0 2.58   IOH = -8 mA 4.5 3.94   IOL = 50 µA 2.0  0.0 0.1 3.0  0.0 0.1 4.5  0.0 0.1 IOL = 4 mA 3.0   0.36 IOL = 8 mA 4.5   0.36 V V V V Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5   ±0.1 µA Quiescent supply current ICC VIN = VCC or GND 5.5   4.0 µA 10.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 ) Characteristics Positive threshold voltage Negative threshold voltage Hysteresis voltage High-level output voltage Low-level output voltage Symbol Test Condition VCC (V) Min Max Unit VP  3.0  2.20 V 4.5  3.15 5.5  3.85 3.0 0.90  4.5 1.35  5.5 1.65  3.0 0.30 1.20 4.5 0.40 1.40 5.5 0.50 1.60 2.0 1.9  3.0 2.9  VN  VH VOH VOL  VIN = VIH or VIL VIN = VIH or VIL IOH = -50 µA 4.5 4.4  IOH = -4 mA 3.0 2.48  IOH = -8 mA 4.5 3.80  IOL = 50 µA 2.0  0.1 3.0  0.1 4.5  0.1 IOL = 4 mA 3.0  0.44 IOL = 8 mA 4.5  0.44 V V V V Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5  ±1.0 µA Quiescent supply current ICC VIN = VCC or GND 5.5  40.0 µA ©2016-2018 Toshiba Electronic Devices & Storage Corporation 4 2018-06-18 Rev.3.0 74VHC9151FT,74VHC9152FT 10.3. DC Characteristics (Unless otherwise specified, Ta = -40 to 125 ) Characteristics Positive threshold voltage Negative threshold voltage Hysteresis voltage High-level output voltage Low-level output voltage Symbol Test Condition VP Max Unit 3.0  2.20 V 4.5  3.15 5.5  3.85 3.0 0.90  4.5 1.35  5.5 1.65  3.0 0.30 1.20 4.5 0.40 1.40 5.5 0.50 1.60 2.0 1.9  3.0 2.9  4.5 4.4  IOH = -4 mA 3.0 2.40  IOH = -8 mA 4.5 3.70  IOL = 50 µA 2.0  0.1 3.0  0.1 4.5  0.1 3.0  0.55  VH VOL Min  VN VOH VCC (V)  VIN = VIH or VIL IOH = -50 µA VIN = VIH or VIL IOL = 4 mA IOL = 8 mA V V V V 4.5  0.55 Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5  ±2.0 µA Quiescent supply current ICC VIN = VCC or GND 5.5  80.0 µA 10.4. AC Characteristics (Unless otherwise specified, Ta = 25 , Input: tr = tf = 3 ns) Characteristics Propagation delay time Part Number Symbol Note 74VHC9151FT tPLH,tPHL Test Condition VCC (V) CL (pF) Min Typ.  3.3 ± 0.3 15  50  15  3.3 6.0 50  5.7 10.5 15  4.8 9.3 50  7.8 15.4 15  3.6 6.3 50  5.7 10.2 3.3 ± 0.3 50   1.5 5.0 ± 0.5 50   1.0  4 10 pF  11  pF  10  5.0 ± 0.5 Propagation delay time 74VHC9152FT tPLH,tPHL  3.3 ± 0.3 5.0 ± 0.5 Output skew tosLH,tosHL (Note 1) Input capacitance Power dissipation capacitance CIN 74VHC9151FT CPD   (Note 2) fIN = 1 MHz 74VHC9152FT Max Unit 4.8 9.4 ns 8.1 16.1 ns ns Note 1: Parameter guaranteed by design. (tosLH = |tPLHm-tPLHn|, tosHL = |tPHLm-tPHLn|) Note 2: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC(opr) = CPD × VCC × fIN + ICC/9 (per bit) ©2016-2018 Toshiba Electronic Devices & Storage Corporation 5 2018-06-18 Rev.3.0 74VHC9151FT,74VHC9152FT 10.5. AC Characteristics (Unless otherwise specified, Ta = -40 to 85 , Input: tr = tf = 3 ns) Characteristics Propagation delay time Part Number Symbol Note 74VHC9151FT tPLH,tPHL Test Condition VCC (V) CL (pF) Min Max Unit  3.3 ± 0.3 15 1.0 10.7 ns 50 1.0 18.4 15 1.0 6.8 50 1.0 11.9 15 1.0 10.6 50 1.0 17.6 15 1.0 7.1 50 1.0 11.6 3.3 ± 0.3 50  1.5 5.0 ± 0.5 50  1.0  10 pF 5.0 ± 0.5 Propagation delay time 74VHC9152FT tPLH,tPHL  3.3 ± 0.3 5.0 ± 0.5 Output skew tosLH,tosHL (Note 1) Input capacitance CIN   ns ns Note 1: Parameter guaranteed by design. (tosLH = |tPLHm-tPLHn|, tosHL = |tPHLm-tPHLn|) 10.6. AC Characteristics (Unless otherwise specified, Ta = -40 to 125 , Input: tr = tf = 3 ns) Characteristics Propagation delay time Part Number Symbol Note 74VHC9151FT tPLH,tPHL Test Condition VCC (V) CL (pF) Min Max Unit  3.3 ± 0.3 15 1.0 12.0 ns 50 1.0 20.0 15 1.0 7.5 50 1.0 13.0 15 1.0 11.5 50 1.0 19.5 15 1.0 8.0 50 1.0 13.0 3.3 ± 0.3 50  1.5 5.0 ± 0.5 50  1.0  10 5.0 ± 0.5 Propagation delay time 74VHC9152FT tPLH,tPHL  3.3 ± 0.3 5.0 ± 0.5 Output skew Input capacitance tosLH,tosHL (Note 1) CIN   ns ns pF Note 1: Parameter guaranteed by design. (tosLH = |tPLHm-tPLHn|, tosHL = |tPHLm-tPHLn|) 11. Internal Equivalent Circuit ©2016-2018 Toshiba Electronic Devices & Storage Corporation 6 2018-06-18 Rev.3.0 74VHC9151FT,74VHC9152FT Package Dimensions Unit: mm Weight: 0.071 g (typ.) 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