74VHCV05FT
CMOS Digital Integrated Circuits
Silicon Monolithic
74VHCV05FT
1. Functional Description
•
Hex Schmitt Inverter (Open Drain)
2. General
The 74VHCV05FT is an advanced high speed CMOS INVERTER fabricated with silicon gate CMOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS
low power dissipation.
Output have high performance MOS N-channel transistor. (Open Drain outputs)
Input pin have hysteresis between the positive-going and negative-going thresholds. Thus the 74VHCV05FT is
capable of squaring up transitions of slowly changing input signals such as line receivers.
Input protection and output circuit ensure that 0 to 5.5 V can be applied to the input and output pin without
regard to the supply voltage. These structure prevents device destruction due to mismatched supply and input/
output voltages such as battery back up, etc.
3. Features
(1)
AEC-Q100 (Rev. H) (Note 1)
(2)
Wide operating temperature range: Topr = -40 to 125
(3)
High speed: tpd = 4.2 ns (typ.) at VCC = 5.0 V
(4)
Low power dissipation: ICC = 2.0 µA (max) at Ta = 25
(5)
Wide operating voltage range: VCC(opr) = 1.8 V to 5.5 V
(6)
Output current: IOL = 16 mA (min)(VCC = 4.5 V)
(7)
Power-down protection is provided on all inputs and outputs.
(8) Pin and function compatible with the 74 series (74AC/HC/AHC/LV etc.) 05 type.
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
4. Packaging
TSSOP14B
Start of commercial production
©2016-2018
Toshiba Electronic Devices & Storage Corporation
1
2014-11
2018-09-03
Rev.3.0
74VHCV05FT
5. Pin Assignment
6. Marking
7. Truth Table
A
Y
L
Z
H
L
8. System Diagram (per gate)
©2016-2018
Toshiba Electronic Devices & Storage Corporation
2
2018-09-03
Rev.3.0
74VHCV05FT
9. Absolute Maximum Ratings (Note)
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VCC
-0.5 to 7.0
V
Input voltage
VIN
-0.5 to 7.0
V
Output voltage
VOUT
Input diode current
(Note 1)
IIK
Output diode current
IOK
Output current
IOUT
Power dissipation
(Note 2)
PD
VCC/ground current
Storage temperature
(Note 3)
-0.5 to 7.0
V
-50
mA
-50
mA
50
mA
180
mW
ICC/IGND
±100
mA
Tstg
-65 to 150
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Output in off state. IOUT absolute maximum rating must be observed.(Output in low state)
Note 2: VOUT < GND
Note 3: 180 mW in the range of Ta = -40 to 85 . From Ta = 85 to 125 a derating factor of -3.25 mW/ shall be
applied until 50 mW.
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Symbol
Test Condition
Rating
Unit
VCC
1.8 to 5.5
V
VIN
0 to 5.5
V
VOUT
0 to 5.5
V
Operating temperature
Topr
-40 to 125
Input rise and fall times
dt/dv
VCC = 3.3 ± 0.3 V
0 to 20
ms/V
VCC = 5.0 ± 0.5 V
0 to 1
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
©2016-2018
Toshiba Electronic Devices & Storage Corporation
3
2018-09-03
Rev.3.0
74VHCV05FT
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Positive threshold voltage
Negative threshold voltage
Hysteresis voltage
Low-level output voltage
Symbol
Test Condition
VP
VN
VH
VOL
VIN = VIH
IOL = 50 µA
IOL = 8 mA
IOL = 16 mA
3-state output OFF-state
leakage current
IOZ
VIN = VIL
VOUT = 0 to 5.5 V
Power-OFF leakage current
IOFF
VIN/VOUT = 5.5 V
VCC (V)
Min
Typ.
Max
Unit
1.8
1.65
V
2.3
1.85
3.0
2.20
4.5
3.15
5.5
3.85
1.8
0.15
2.3
0.45
3.0
0.90
4.5
1.35
5.5
1.65
1.8
0.15
1.05
2.3
0.20
1.10
3.0
0.30
1.20
4.5
0.40
1.40
5.5
0.50
1.60
1.8
0.0
0.1
3.0
0.0
0.1
4.5
0.0
0.1
3.0
0.36
V
V
V
4.5
0.44
1.8 to 5.5
±0.25
µA
0
0.5
µA
Input leakage current
IIN
VIN = 5.5 V or GND
0 to 5.5
±0.1
µA
Quiescent supply current
ICC
VIN = VCC or GND
5.5
2.0
µA
©2016-2018
Toshiba Electronic Devices & Storage Corporation
4
2018-09-03
Rev.3.0
74VHCV05FT
11.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics
Positive threshold voltage
Negative threshold voltage
Hysteresis voltage
Low-level output voltage
Symbol
Test Condition
VP
Min
Max
Unit
1.8
1.65
V
2.3
1.85
3.0
2.20
4.5
3.15
5.5
3.85
1.8
0.15
2.3
0.45
3.0
0.90
4.5
1.35
5.5
1.65
1.8
0.15
1.05
2.3
0.20
1.10
3.0
0.30
1.20
4.5
0.40
1.40
5.5
0.50
1.60
1.8
0.1
3.0
0.1
4.5
0.1
IOL = 8 mA
3.0
0.44
IOL = 16 mA
4.5
0.55
1.8 to 5.5
±2.5
µA
VN
VH
VOL
VCC (V)
VIN = VIH
IOL = 50 µA
3-state output OFF-state leakage
current
IOZ
VIN = VIL
VOUT = 0 to 5.5 V
Power-OFF leakage current
IOFF
VIN/VOUT = 5.5 V
V
V
V
0
5.0
µA
Input leakage current
IIN
VIN = 5.5 V or GND
0 to 5.5
±1.0
µA
Quiescent supply current
ICC
VIN = VCC or GND
5.5
20.0
µA
©2016-2018
Toshiba Electronic Devices & Storage Corporation
5
2018-09-03
Rev.3.0
74VHCV05FT
11.3. DC Characteristics (Unless otherwise specified, Ta = -40 to 125 )
Characteristics
Positive threshold voltage
Negative threshold voltage
Hysteresis voltage
Low-level output voltage
Symbol
Test Condition
VP
Min
Max
Unit
1.8
1.65
V
2.3
1.85
3.0
2.20
4.5
3.15
5.5
3.85
1.8
0.15
2.3
0.45
3.0
0.90
4.5
1.35
5.5
1.65
1.8
0.15
1.05
2.3
0.20
1.10
3.0
0.30
1.20
4.5
0.40
1.40
5.5
0.50
1.60
1.8
0.1
3.0
0.1
4.5
0.1
IOL = 8 mA
3.0
0.55
IOL = 16 mA
4.5
0.65
1.8 to 5.5
±10.0
µA
VN
VH
VOL
VCC (V)
VIN = VIH
IOL = 50 µA
3-state output OFF-state leakage
current
IOZ
VIN = VIL
VOUT = 0 to 5.5 V
Power-OFF leakage current
IOFF
VIN/VOUT = 5.5 V
V
V
V
0
20.0
µA
Input leakage current
IIN
VIN = 5.5 V or GND
0 to 5.5
±2.0
µA
Quiescent supply current
ICC
VIN = VCC or GND
5.5
40.0
µA
11.4. AC Characteristics (Unless otherwise specified, Ta = 25 , Input: tr = tf = 3 ns)
Characteristics
Propagation delay time
Symbol
Note
tPZL
Test
Condition
VCC (V)
CL (pF)
Min
RL = 1 kΩ
2.5 ± 0.2
15
50
Typ.
Max
Unit
7.3
12.2
ns
10.1
16.6
15
5.6
7.1
50
7.6
10.6
15
4.2
5.5
50
5.7
7.5
2.5 ± 0.2
50
11.6
15.2
3.3 ± 0.3
50
9.2
10.6
5.0 ± 0.5
50
3.3 ± 0.3
5.0 ± 0.5
Propagation delay time
Input capacitance
tPLZ
RL = 1 kΩ
CIN
Output capacitance
COUT
Power dissipation capacitance
CPD
(Note 1)
ns
6.9
7.5
4
10
pF
5
pF
4
pF
Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
ICC(opr) = CPD × VCC × fIN + ICC/6 (per gate)
©2016-2018
Toshiba Electronic Devices & Storage Corporation
6
2018-09-03
Rev.3.0
74VHCV05FT
11.5. AC Characteristics
(Unless otherwise specified, Ta = -40 to 85 , Input: tr = tf = 3 ns)
Characteristics
Propagation delay time
Symbol
Test Condition
VCC (V)
CL (pF)
Min
Max
Unit
tPZL
RL = 1 kΩ
2.5 ± 0.2
15
1.0
15.0
ns
50
1.0
19.5
15
1.0
8.5
50
1.0
12.0
15
1.0
6.5
50
1.0
8.5
2.5 ± 0.2
50
1.0
18.0
3.3 ± 0.3
50
1.0
12.0
5.0 ± 0.5
50
1.0
8.5
10
pF
3.3 ± 0.3
5.0 ± 0.5
Propagation delay time
Input capacitance
tPLZ
RL = 1 kΩ
CIN
ns
11.6. AC Characteristics
(Unless otherwise specified, Ta = -40 to 125 , Input: tr = tf = 3 ns)
Characteristics
Propagation delay time
Symbol
Test Condition
VCC (V)
CL (pF)
Min
Max
Unit
tPZL
RL = 1 kΩ
2.5 ± 0.2
15
1.0
17.0
ns
50
1.0
21.5
15
1.0
10.0
50
1.0
13.5
15
1.0
7.5
50
1.0
9.5
2.5 ± 0.2
50
1.0
20.0
3.3 ± 0.3
50
1.0
13.5
5.0 ± 0.5
50
1.0
9.5
10
3.3 ± 0.3
5.0 ± 0.5
Propagation delay time
Input capacitance
tPLZ
RL = 1 kΩ
CIN
ns
pF
, Input: tr = tf = 3 ns)
25
11.7. Noise Characteristics (Unless otherwise specified, Ta = 25
Characteristics
Symbol
Test Condition
VCC (V)
Typ.
Max
Unit
3.3
0.3
V
5.0
0.6
3.3
-0.1
Quiet output maximum dynamic VOL
VOLP
CL = 50 pF
Quiet output minimum dynamic VOL
VOLV
CL = 50 pF
5.0
-0.2
Minimum high-level dynamic input voltage
VIHD
CL = 50 pF
5.0
3.5
V
Maximum low-level dynamic input voltage
VILD
CL = 50 pF
5.0
1.5
V
©2016-2018
Toshiba Electronic Devices & Storage Corporation
7
V
2018-09-03
Rev.3.0
74VHCV05FT
Package Dimensions
Unit: mm
Weight: 0.054 g (typ.)
Package Name(s)
Nickname: TSSOP14B
©2016-2018
Toshiba Electronic Devices & Storage Corporation
8
2018-09-03
Rev.3.0
74VHCV05FT
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©2016-2018
Toshiba Electronic Devices & Storage Corporation
9
2018-09-03
Rev.3.0