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TOSHIBA Schottky Barrier Diode
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○ DC-DC Converters
○ Radio-Frequency Rectification in Switching Regulators
○ Reverse-Current Protection in Mobile Devices
•
Unit: mm
Repetitive peak reverse voltage : VRRM = 30 V
•
Average forward current
•
•
Peak forward voltage
: VFM = 0.37 V (max)
Suitable for high-density board assembly due to the use of a small
Toshiba Nickname: M−FLATTM
: IF (AV) = 5.0 A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF (AV)
5.0 (Note 1)
A
IFSM
70 (50 Hz)
A
Junction temperature
Tj
−40 to 125
°C
JEDEC
―
Storage temperature
Tstg
−40 to 150
°C
JEITA
―
Non-repetitive peak forward surge current
TOSHIBA
Note 1: Tℓ = 36°C: Rectangular waveform (α = 180°), VR = 15 V
3-4E1S
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance (junction to lead)
Symbol
Test Condition
Min
Typ.
Max
VFM (1)
IFM = 1 A (pulse test)
0.27
VFM (2)
IFM = 3 A (pulse test)
0.31
VFM (3)
IFM = 5 A (pulse test)
0.35
0.37
IRRM (1)
VRRM = 5 V (pulse test)
0.31
IRRM (2)
VRRM = 30 V (pulse test)
3.3
8.0
VR = 10 V, f = 1.0 MHz
330
Device mounted on a ceramic board
board size
50 mm × 50 mm
soldering land size
2 mm × 2 mm
board thickness
0.64 mm
60
Cj
Rth (j-a)
Device mounted on a glass-epoxy board
board size
50 mm × 50 mm
soldering land size
6 mm × 6 mm
board thickness
1.6 mm
135
16
Rth (j-ℓ)
Unit
V
mA
pF
°C/W
Start of commercial production
2000-07
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Marking
Abbreviation Code
Part No.
S4
CMS04
Land pattern dimensions for reference only
2.1
Unit: mm
1.4
3.0
1.4
Handling Precaution
1)
Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. This
device is VF - IRRM trade-off type, lower VF higher IRRM; therefore, thermal runaway might occur when voltage is
applied. Please take forward and reverse loss into consideration during design.
2)
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take this
temperature coefficient into account designing a device at low temperature.
IF (AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating of
IF(AV) and Tj be below 100°C. When using this device, take the margin into consideration by using an
allowable Ta max - IF(AV) curve.
IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj:
Derate this rating when using a device in order to ensure high reliability. We recommend that the device
be used at a Tj of below 100°C.
3)
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When
using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance
value.
4)
For other design considerations, see the Toshiba website.
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I F – VF
PF (AV) – IF (AV)
100
2.4
Forward current IF
(A)
Average forward power dissipation
PF (AV) (W)
DC
10
125°C
75°C
1
0.2
120°
1.6
α = 60°
1.2
Rectangular
waveform
0.8
0.4
0° α 360°
IF(AV)
Pulse test
Tj = 25°C
0.1
0
180°
1.8
0.4
0.6
0.8
Forward voltage
1.0
VF
1.2
0
0
1.4
(V)
Conduction angle: α
1.0
2.0
Rectangular
waveform
DC
80
0° α 360°
IF(AV)
270°
60
20
0
0
Conduction angle: α
VR = 5 V
180°
40
120°
α = 60°
1
2
3
4
5
Average forward current
6.0
7.0
IF (AV)
8.0
(A)
Tℓ max – IF (AV)
Maximum allowable lead temperature
Tℓ max (°C)
Maximum allowable ambient temperature
Ta max (°C)
100
5.0
140
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
Soldering land: size 2 mm × 2 mm
board thickness: 0.64 mm
120
4.0
Average forward current
Ta max – IF (AV)
140
3.0
6
IF (AV)
7
120
100
80
60
(A)
270°
180°
Rectangular
waveform
120°
40
0° α 360°
IF(AV)
20 Conduction angle: α
VR = 5 V
0
0
8
DC
α = 60°
1
2
3
4
Average forward current
5
6
IF (AV)
7
8
(A)
Tℓ max – IF (AV)
Maximum allowable lead temperature
Tℓ max (°C)
140
120
DC
100
270°
80
60
Rectangular
waveform
180°
40
0
0
0° α 360°
IF(AV)
Conduction angle: α
VR = 15 V
α = 120°
20
1
2
3
4
Average forward current
5
6
IF (AV)
7
8
(A)
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Cj –VR
Repetitive peak forward current
(A)
1000
f = 1 MHz
Repetitive peak forward current IFRM
Junction capacitance
Cj
(pF)
Ta = 25°C
100
1
10
10 V
5V
VR = 3 V
10
1
60
80
100
Junction temperature Tj
20
10
100
PR (AV) – VR
120
140
DC
0° α 360°
20
300°
VR
16
240°
Conduction angle: α
Tj = 125°C
12
180°
8
120°
4
0
160
Rectangular
waveform
24
α = 60°
0
10
(°C)
30
20
Reverse voltage VR
(V)
rth (j-a)
(°C/W)
rth (j-a) – t
Transient thermal resistance
(mA)
Reverse current IR
100
Average reverse power dissipation
PR (AV) (W)
20 V
15 V
VR = 30 V
40
40
28
Pulse test
20
60
Number of cycles
I R – Tj
0
Ta = 25°C
80
(V)
1000
0.1
f = 50 Hz
0
1
100
Reverse voltage VR
100
500
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land size: 2.1 mm × 1.4 mm
board thickness: 1.6 mm
100
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land size: 6 mm × 6 mm
board thickness: 1.6 mm
10
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
Soldering land: size 2 mm × 2 mm
board thickness: 0.64 mm
1
0.5
0.001
0.01
0.1
1
10
100
1000
Time (s)
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