CRS05(TE85L,Q,M)

CRS05 TOSHIBA Schottky Barrier Diode CRS05 ○ Secondary Rectification in Switching Regulators ○ Reverse-Current Protection in Mobile Devices • • • • • Repetitive peak reverse voltage Average forward current Peak forward voltage Repetitive peak reverse current Unit: mm : VRRM = 30 V : IF (AV) = 1.0 A : VFM = 0.45 V (max) @IFM = 1.0 A : IRRM = 5 μA (max) @VRRM = 5 V The use of small, thin surface-mount package is optimum way for high-density mounting. Nickname: S-FLATTM Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward current IF(AV) Non-repetitive peak forward surge current IFSM 20 (50 Hz) A Junction temperature Tj −40 to 150 °C Storage temperature Tstg −40 to 150 °C 1.0 (Note 1) 1.0 (Note 2) A 1 ANODE 2 CATHODE Note 1: Ta = 102°C Device mounted on a ceramic board JEDEC ― board size ：50 mm × 50 mm Soldering land size ：2 mm × 2 mm JEITA ― board thickness ：0.64 mm TOSHIBA 3-2A1S Rectangular waveform ：α = 180°, VR = 15 V Note 2: Ta = 54.7°C Device mounted on a glass-epoxy board Weight: 0.013 g (typ.) board size ：50 mm × 50 mm Soldering land size ：6 mm × 6 mm board thickness ：1.6 mm Rectangular waveform ：α = 180°, VR = 15 V Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Thermal resistance (junction to ambient) Symbol Test Condition Min Typ. Max ― VFM (1) IFM = 0.1 A (pulse test) ― 0.33 VFM (2) IFM = 0.7 A (pulse test) ― 0.40 ― VFM (3) IFM = 1.0 A (pulse test) ― 0.42 0.45 IRRM (1) VRRM = 5 V (pulse test) ― 2.0 5.0 IRRM (2) VRRM = 30 V (pulse test) ― 20 200 VR = 10 V, f = 1.0 MHz ― 60 ― ― ― 70 Cj Rth (j-a) Device mounted on a ceramic board board size 50 mm × 50 mm soldering land size 2 mm × 2 mm board thickness 0.64 mm Device mounted on a glass-epoxy board board size 50 mm × 50 mm soldering land size 6 mm × 6 mm board thickness 1.6 mm Unit V μA pF °C/W ― ― 140 Start of commercial production 1 2000-07 2019-04-01 CRS05 Marking Abbreviation Code Part No. S5 CRS05 Land pattern dimensions for reference only Unit: mm 1.2 1.2 2.8 Usage Considerations 1) Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings are rated values that must not be exceeded for a moment to have you use an element safely. Please refer to each following absolute maximum ratings on the occasion of use and design. VRRM: VRRM has a temperature coefficient of 0.1 %/°C. Please take this coefficient into account when designing a circuit board that will be operated in a low-temperature environment. IF(AV): We recommend that the current be in less than 80 % of rating and the junction temperature (Tj) be in less than 80 % of absolute maximum rating under the worst condition. This rating is based on the premise that the device is radiating heat enough. Therefore, when enough heat radiation is not expected, please consider the margin to the permission curve of Ta(max) - IF(AV) for using the device. IFSM : This rating specifies a non-repetitive limit value. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. Tj : Derate device parameters in proportion to this rating in order to ensure high reliability. We recommend that the junction temperature (Tj) of a device be kept below 80 %. 3) Thermal resistance (junction-to-ambient) varies with the mounting conditions of the device on the circuit board. An appropriate thermal resistance value that should be used, must be considering the circuit board design and soldering land size. 4) For other design considerations, see the Toshiba website. 2 2019-04-01 CRS05 I F – VF PF (AV) – IF (AV) Forward current IF Average forward power dissipation PF (AV) (W) 0.6 (A) 10 Tj = 150°C 125°C 1 25°C 75°C 0.5 DC 180° 0.4 120° 0.3 α = 60° Rectangular waveform 0.2 0° α 0.1 Conduction angle: α Pulse test 0.1 0 0.1 0.2 0.3 0.4 0.5 Forward voltage 0.6 VF 0.7 0.8 0 0 0.9 0.2 0.4 DC 120 100 180° 80 60 40 Rectangular waveform 120° IF(AV) α = 60° 0° α 20 0 0 360° Conduction angle: α VR = 15 V 0.2 0.4 0.6 0.8 1.0 Average forward current 1.2 1.4 IF (AV) 160 Maximum allowable ambient temperature Ta max (°C) Maximum allowable ambient temperature Ta max (°C) 140 140 Repetitive peak forward current IFRM Transient thermal resistance rth (j-a) (°C/W) (A) time t (A) α = 60° 80 60 120° Rectangular waveform IF(AV) 40 20 180° 0° α 360° Conduction angle: α VR = 15 V 0.2 0.4 0.6 0.8 1.0 1.2 IF (AV) 1.4 1.6 (A) Repetitive peak forward current Device mounted on a ceramic board: board size: 50 mm × 50 mm Soldering land: size 2 mm × 2 mm board thickness: 0.64 mm 1 1.6 100 Average forward current 100 0.1 1.4 DC (A) Device mounted on a glass-epoxy board: board size: 50 mm × 50 mm Soldering land size: 6 mm × 6 mm board thickness: 1.6 mm 0.01 1.2 IF (AV) 120 rth (j-a) – t 1 0.001 1.0 Device mounted on a ceramic board: board size: 50 mm × 50 mm Soldering land size: 2 mm × 2 mm board thickness: 0.64 mm 0 0 1.6 1000 100 0.8 Ta max – IF (AV) Device mounted on a glass-epoxy board: board size: 50 mm × 50 mm Soldering land size: 6 mm × 6 mm board thickness: 1.6 mm 160 0.6 Average forward current (V) Ta max – IF (AV) 180 360° 10 100 (s) 28 Ta = 25°C f = 50 Hz 24 20 16 12 8 4 0 1 10 100 Number of cycles 3 2019-04-01 CRS05 I R – Tj PR (AV) – VR 0.8 Pulse test Average reverse power dissipation PR (AV) (W) Repetitive peak reverse current IR (mA) 100 10 VR = 30 V 1 20 V 0.1 15 V 10 V 5V 0.01 0.001 0 20 40 60 80 100 Junction temperature Tj 120 140 0.7 0.6 VR DC 0.5 Conduction angle: α Tj = 150°C 0.4 300° 240° 0.3 0.2 180° 120° α = 60° 0.1 0 0 160 Rectangular waveform 0° 360° 10 20 Reverse voltage VR (°C) 30 (V) Cj – VR 1000 f = 1 MHz Junction capacitance Cj (pF) Ta = 25°C 100 10 1 10 Reverse voltage VR 100 (V) 4 2019-04-01 CRS05 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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