CRS10I40B(TE85L,QM

CRS10I40B Schottky Barrier Diode CRS10I40B 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features (1) Peak forward voltage: VFM = 0.45 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A (3) Repetitive peak reverse voltage: VRRM = 40 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packaging and Internal Circuit 1: Anode 2: Cathode 3-2A1S 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Repetitive peak reverse voltage VRRM Average forward current IF(AV) (Note 1) Non-repetitive peak forward surge current IFSM (Note 2) Rating Unit 40 V 1 A 25 Junction temperature Tj 150 Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tℓ = 126 , square wave (α = 180°), VR = 20 V Note 2: f = 50 Hz, half-sine wave, non-repetitive Start of commercial production ©2020 Toshiba Electronic Devices & Storage Corporation 1 2010-10 2020-10-14 Rev.3.0 CRS10I40B 5. Thermal Characteristics Characteristics Symbol Thermal resistance (junction-to-ambient) Thermal resistance (junction-to-lead) Note Rth(j-a) Rth(j-ℓ) Test Condition Max Unit Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land size: 2 mm × 2 mm) (board thickness: 0.64 mm) 70 /W Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land size: 6 mm × 6 mm) (board thickness: 1.6 mm) 140 Junction to cathode lead 20 /W 6. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Symbol Note Test Condition Min Typ. Max Unit V VFM(1) IFM = 0.1 A (pulse measurement)  0.26  VFM(2) IFM = 0.7 A (pulse measurement)  0.34  VFM(3) IFM = 1 A (pulse measurement)  0.37 0.45 IRRM(1) VRRM = 5 V (pulse measurement)  8  IRRM(2) VRRM = 40 V (pulse measurement)  17 100 VR = 10 V, f = 1 MHz  62  Cj µA pF 7. Marking Fig. 7.1 Marking Marking Code Part Number SS CRS10I40B ©2020 Toshiba Electronic Devices & Storage Corporation 2 2020-10-14 Rev.3.0 CRS10I40B 8. Usage Considerations (1) Schottky barrier diodes (SBDs) have reverse current greater than other types of diodes. This makes SBDs more vulnerable to damage due to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. (2) The absolute maximum ratings are rated values that must not be exceeded during operation, even for an instant. The following are the recommended general derating methods for designing a circuit board using this device. VRRM:Use this rating with reference to (1) above. VRRM has a temperature coefficient of 0.1 %/ at low temperatures. Take this coefficient into account when designing a circuit board that will be operated in a low-temperature environment. IF(AV):We recommend that the worst-case current be no greater than 80 % of the absolute maximum rating of IF(AV) and that the worst-case junction temperature, Tj, be kept below 120 . When using this device, allow margins, referring to the Ta(max)-IF(AV) curve. IFSM:This rating specifies peak non-repetitive forward surge current. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. Tj: Derate device parameters in proportion to this rating in order to ensure high reliability. We recommend that the junction temperature (Tj) of a device be kept below 120 . (3) Thermal resistance (junction-to-ambient) varies with the mounting conditions of a device on a circuit board. An appropriate thermal resistance value should be used, considering the heat sink, circuit board design and land pattern dimensions (provided for reference only). (4) For other design considerations, see the Rectifiers databook or the Toshiba Semiconductor website. 9. Land Pattern Dimensions (for reference only) Fig. 9.1 Land Pattern Dimensions for Reference Only (Unit: mm) ©2020 Toshiba Electronic Devices & Storage Corporation 3 2020-10-14 Rev.3.0 CRS10I40B 10. Characteristics Curves (Note) Fig. 10.1 IF - VF Fig. 10.2 PF(AV) - IF(AV) Fig. 10.3 Ta(max) - IF(AV) Fig. 10.4 Tℓ(max) - IF(AV) Fig. 10.5 Peak Repetitive Forward Current ©2020 Toshiba Electronic Devices & Storage Corporation 4 2020-10-14 Rev.3.0 CRS10I40B Fig. 10.6 rth(j-a) - t Fig. 10.7 Cj - VR Note: Fig. 10.8 IR - Tj The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2020 Toshiba Electronic Devices & Storage Corporation 5 2020-10-14 Rev.3.0 CRS10I40B Package Dimensions Unit: mm Weight: 0.013 g (typ.) Package Name(s) TOSHIBA: 3-2A1S Nickname: S-FLAT ©2020 Toshiba Electronic Devices & Storage Corporation 6 2020-10-14 Rev.3.0 CRS10I40B RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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