CRS14

CRS14 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS14 Switching Mode Power Supply Applications Portable Equipment Battery Applications ② Unit: mm • • • • Forward voltage: VFM = 0.49 V (max) @ IF = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V Suitable for high-density board assembly due to the use of a small surface-mount package, “S-FLATTM” 2.6 ± 0.1 3.5 ± 0.2 Average forward current: IF (AV) = 2.0 A Absolute Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Storage temperature Symbol VRRM IF (AV) IFSM Tj Tstg Rating 30 2.0 (Note 1) 30 (50 Hz) −40 to 150 −40 to 150 Unit 0.9 ± 0.1 + 0.2 1.6 − 0.1 ① 0.98 ± 0.1 0.16 0 ~ 0.1 V A A °C °C ① ANODE ② CATHODE JEDEC JEITA TOSHIBA ⎯ ⎯ 3-2A1A Note 1: Ta = 64°C : Device mounted on a ceramic board Board size : 50 mm × 50 mm Soldering size : 2 mm × 2 mm Board thickness : 0.64 mm Rectangular waveform (α = 180°), VR = 15 V Weight: 0.013 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-04-20 0.65 ± 0.2 0.65 ± 0.2 CRS14 Electrical Characteristics (Ta = 25°C) Characteristics Symbol VFM (1) Peak forward voltage VFM (2) VFM (3) Repetitive peak reverse current Junction capacitance Test Condition IFM = 0.1 A (pulse test) IFM = 1.0 A (pulse test) IFM = 2.0 A (pulse test) Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. 0.35 0.415 0.44 0.8 10 90 Max ⎯ ⎯ 0.49 ⎯ 50 ⎯ μA pF V Unit IRRM (1) VRRM = 5 V (pulse test) IRRM (2) VRRM = 30 V (pulse test) Cj VR = 10 V, f = 1.0 MHz Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land: 2 mm × 2 mm) (board thickness: 0.64 mm) Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 6 mm × 6 mm) (board thickness: 1.6 mm) ⎯ ⎯ 70 °C/W Thermal resistance (junction to ambient) Rth (j-a) ⎯ ⎯ 140 Thermal resistance (junction to lead) Rth (j-ℓ) ⎯ ⎯ ⎯ 20 °C/W 2 2009-04-20 CRS14 Marking Part No.(or abbreviation code) Abbreviation Code SD Part No. CRS14 Cathode Anode SD Cathode mark and Lot code Standard Soldering Pad Unit: mm 1.2 1.2 2.8 Handling Precaution Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded,even for a moment. Do not exceed any of these ratings. The following are the general derating methods that we recommend when you design a circuit with a device. VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into account designing a device at low temperature. We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IF(AV) and Tj be below 120°C. When using this device, take the margin into consideration by using an allowable Tamax-IF(AV) curve. This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at a Tj of below 120°C. IF(AV): IFSM: Tj: Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 3 2009-04-20 CRS14 iF – vF (A) 10 1.2 PF (AV) – IF (AV) DC Average forward power dissipation PF (AV) (W) 3 Tj = 150°C 1 125°C 75°C 0.3 25°C iF 1.0 180° 0.8 120° α = 60° Rectangular waveform Instantaneous forward current 0.6 0.1 0.4 0.03 0.2 0° α 360° Conduction angle α 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.0 Instantaneous forward voltage vF (V) Average forward current IF (AV) (A) 50 mm × 50 mm, soldering land: 2 mm × 2 mm) 160 140 Rectangular waveform Ta max – IF (AV) Ceramic substrate (substrate size: Ta max – IF (AV) Glass-epoxy substrate (substrate size: 50 mm × 50 mm, soldering land: 6 mm × 6 mm) 160 140 Rectangular waveform Maximum allowable temperature Ta max (°C) Maximum allowable temperature Ta max (°C) 120 100 80 60 40 20 0 0.0 120° α = 60° 0° α 360° IF (AV) Conduction angle α VR = 15 V 120 100 80 60 0° α 360° IF (AV) Conduction angle α VR = 15 V DC DC 40 180° 20 0 0.0 α = 60° 0.4 120 0.8 1.2 1.6 2.0 2.4 2.8 3.2 180° 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Average forward current IF (AV) (A) Average forward current IF (AV) (A) Tℓ max – IF (AV) 160 1000 500 rth (j-a) – t Device mounted on a glass-epoxy board: board size: 50 mm × 50 mm Soldering land: 6.0 mm × 6.0 mm board thickness: 1.6 mm Maximum allowable lead temperature Tℓ max (°C) 140 120 100 80 60 40 0° α 360° IF (AV) 20 Conduction angle α VR = 15 V Transient thermal impedance rth (j-a) (°C/W) 300 100 50 30 α = 60° 120° 180° DC Rectangular waveform 10 5 3 Device mounted on a ceramic board: board size: 50 mm × 50 mm Soldering land: 2.0 mm × 2.0 mm board thickness: 0.64 mm 0.01 0.1 1 10 100 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 1 0.001 Average forward current IF (AV) (A) Time t (s) 4 2009-04-20 CRS14 Surge forward current (non-repetitive) 40 1000 Ta = 25°C Cj – VR (typ.) f = 1 MHz Ta = 25°C IFSM (A) (pF) Junction capacitance Cj f = 50 Hz 30 500 300 Peak surge forward current 20 100 50 30 10 0 1 3 5 10 30 50 100 10 1 3 5 10 30 50 100 Number of cycles Reverse voltage VR (V) IR – Tj 100 Pulse test 10 (typ.) 0.8 PR (AV) – VR Average reverse power dissipation 0.7 0.6 Rectangular waveform 0° 360° (typ.) (mA) VR = 30 V 1 (W) Reverse current IR 0.5 0.4 0.3 0.2 0.1 0 VR Conduction angle α Tj = 150°C 300° 240° 180° 120° 60° DC 20 V 10 V 0.01 3V 0.001 5V 0.0001 0 20 40 60 80 100 120 140 160 PR (AV) 0.1 0 4 8 12 16 20 24 28 Junction temperature Tj (°C) Reverse voltage VR (V) 5 2009-04-20 CRS14 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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