CUHZ20V,H3F

CUHZ Series TOSHIBA Zener Diode Silicon Epitaxial Planar Type CUHZ Series Applications Voltage surge protection Features • Small package • The typical voltage of VZ is accorded to E24 series Packaging and Internal Circuit 1 2 1: Cathode 2: Anode US2H Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25°C) Characteristics Symbol Rating Unit Power dissipation PD*1 1200 mW 500 mW PD *2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25°C) Type No. Electrostatic discharge voltage *3 Contact Air Peak pulse Peak pulse *4 power *4 current VESD(kV) PPK(W) IPP(A) CUHZ5V6 ± 30 1750 91 CUHZ6V2 ± 30 1800 87 CUHZ6V8 ± 30 1800 CUHZ8V2 ± 30 CUHZ12V ± 30 Note: Type No. Electrostatic discharge voltage *3 Contact Air Peak pulse power *4 Peak pulse *4 current VESD(kV) PPK(W) IPP(A) CUHZ16V ± 30 2100 42 CUHZ20V ± 30 2100 36 73 CUHZ24V ± 30 2100 27 1900 68 CUHZ30V ± 30 2100 26 2100 60 CUHZ36V ± 30 2100 23 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *1: Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2 *2: Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, pad dimensions of 4 mm × 4 mm. *3: according to IEC61000-4-2 *4: according to IEC61000-4-5, tp = 8 / 20 μs Start of commercial production 2021-04 © 2021 Toshiba Electronic Devices & Storage Corporation 1 2021-09-17 CUHZ Series CUHZ series Electrical Characteristics (Unless otherwise specified, Ta = 25 ºC) Zener Voltage Type No. Dynamic Impedance ZZ (Ω) Dynamic resistance Clamp voltage Test Current RDYN (Ω) *1 VC (V) *1*2 IZ (mA) Total capacitance Reverse Current Ct (pF)*3 IR (μA) Typ. Typ. Typ. Max Test Voltage VR(V) 10 0.02 5.7 860 10 3.5 10 0.02 6.1 735 10 5.0 30 10 0.014 7.2 585 0.5 5.5 10 30 10 0.035 8.5 450 0.1 7 12.6 10 30 10 0.13 13.6 280 0.1 10 17.1 10 35 10 0.085 17 210 0.1 14 20 21.2 10 35 10 0.13 20.6 180 0.1 17.6 24 25.6 10 70 10 0.14 25.5 150 0.1 19 CUHZ30V 28.0 30 32.0 10 80 10 0.21 33.8 125 0.1 27 CUHZ36V 34.0 36 38.0 9 100 9 0.39 41.2 105 0.1 32.5 Test Current VZ (V) Min Typ. Max IZ (mA) CUHZ5V6 5.3 5.6 6.0 10 30 CUHZ6V2 5.8 6.2 6.6 10 30 CUHZ6V8 6.4 6.8 7.2 10 CUHZ8V2 7.7 8.2 8.7 CUHZ12V 11.4 12 CUHZ16V 15.3 16 CUHZ20V 18.8 CUHZ24V 22.8 Max *1: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between ITLP1 = 16 A and ITLP2 = 30 A. *2: ITLP = 16 A *3: VR = 0 V, f = 1 MHz Marking List Type No. Marking (CUHZ5V6) Marking Type No. Marking CUHZ5V6 LL CUHZ16V M7 CUHZ6V2 LM CUHZ20V M9 CUHZ6V8 LN CUHZ24V MB CUHZ8V2 LQ CUHZ30V MD M4 CUHZ36V MF CUHZ12V 1 2 LL Land Pattern Dimensions (for reference only) (Unit: mm) © 2021 Toshiba Electronic Devices & Storage Corporation 2 2021-09-17 CUHZ Series CUHZ series Characteristics Curves (Note) IZ - VZ (1) IZ - VZ (2) γZ - VZ αZ - V Z Ct - VR (1) Ct - VR (2) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 3 2021-09-17 CUHZ Series CUHZ series Characteristics Curves (Note) PRSM - tw P D - Ta rth(j-a) - tw Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 4 2021-09-17 CUHZ Series CUHZ5V6 Characteristics Curves (Note 1) ITLP - VTLP Clamp Waveform +8 kV VC – IPP (Note 2) (Note 3) (Note 2) Peak Pulse Current (VC - IPP) Clamp Waveform -8 kV (Note 3) (Note 3) Clamp waveform measurement circuit Based on IEC61000-4-5 8/20 μs pulse. IEC61000-4-2 (Contact) Note 1: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 5 2021-09-17 CUHZ Series CUHZ6V2 Characteristics Curves (Note 1) ITLP - VTLP Clamp Waveform +8 kV VC – IPP (Note 2) (Note 3) (Note 2) Peak Pulse Current (VC - IPP) Clamp Waveform -8 kV (Note 3) (Note 3) Clamp waveform measurement circuit Based on IEC61000-4-5 8/20 μs pulse. IEC61000-4-2 (Contact) Note 1: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 6 2021-09-17 CUHZ Series CUHZ6V8 Characteristics Curves (Note 1) ITLP - VTLP Clamp Waveform +8 kV VC – IPP (Note 2) (Note 3) (Note 2) Peak Pulse Current (VC - IPP) Clamp Waveform -8 kV (Note 3) (Note 3) Clamp waveform measurement circuit Based on IEC61000-4-5 8/20 μs pulse. IEC61000-4-2 (Contact) Note 1: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 7 2021-09-17 CUHZ Series CUHZ8V2 Characteristics Curves (Note 1) ITLP - VTLP Clamp Waveform +8 kV VC – IPP (Note 2) (Note 3) (Note 2) Peak Pulse Current (VC - IPP) Clamp Waveform -8 kV (Note 3) (Note 3) Clamp waveform measurement circuit Based on IEC61000-4-5 8/20 μs pulse. IEC61000-4-2 (Contact) Note 1: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 8 2021-09-17 CUHZ Series CUHZ12V Characteristics Curves (Note 1) ITLP - VTLP Clamp Waveform +8 kV VC – IPP (Note 2) (Note 3) (Note 2) Peak Pulse Current (VC - IPP) Clamp Waveform -8 kV (Note 3) (Note 3) Clamp waveform measurement circuit Based on IEC61000-4-5 8/20 μs pulse. IEC61000-4-2 (Contact) Note 1: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 9 2021-09-17 CUHZ Series CUHZ16V Characteristics Curves (Note 1) ITLP - VTLP Clamp Waveform +8 kV VC – IPP (Note 2) (Note 3) (Note 2) Peak Pulse Current (VC - IPP) Clamp Waveform -8 kV (Note 3) (Note 3) Clamp waveform measurement circuit Based on IEC61000-4-5 8/20 μs pulse. IEC61000-4-2 (Contact) Note 1: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 10 2021-09-17 CUHZ Series CUHZ20V Characteristics Curves (Note 1) ITLP - VTLP Clamp Waveform +8 kV VC – IPP (Note 2) (Note 3) (Note 2) Peak Pulse Current (VC - IPP) Clamp Waveform -8 kV (Note 3) (Note 3) Clamp waveform measurement circuit Based on IEC61000-4-5 8/20 μs pulse. IEC61000-4-2 (Contact) Note 1: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 11 2021-09-17 CUHZ Series CUHZ24V Characteristics Curves (Note 1) ITLP - VTLP Clamp Waveform +8 kV VC – IPP (Note 2) (Note 3) (Note 2) Peak Pulse Current (VC - IPP) Clamp Waveform -8 kV (Note 3) (Note 3) Clamp waveform measurement circuit Based on IEC61000-4-5 8/20 μs pulse. IEC61000-4-2 (Contact) Note 1: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 12 2021-09-17 CUHZ Series CUHZ30V Characteristics Curves (Note 1) ITLP - VTLP Clamp Waveform +8 kV VC – IPP (Note 2) (Note 3) (Note 2) Peak Pulse Current (VC - IPP) Clamp Waveform -8 kV (Note 3) (Note 3) Clamp waveform measurement circuit Based on IEC61000-4-5 8/20 μs pulse. IEC61000-4-2 (Contact) Note 1: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 13 2021-09-17 CUHZ Series CUHZ36V Characteristics Curves (Note 1) ITLP - VTLP Clamp Waveform +8 kV VC – IPP (Note 2) (Note 3) (Note 2) Peak Pulse Current (VC - IPP) Clamp Waveform -8 kV (Note 3) (Note 3) Clamp waveform measurement circuit Based on IEC61000-4-5 8/20 μs pulse. IEC61000-4-2 (Contact) Note 1: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 14 2021-09-17 CUHZ Series Package Dimensions Unit: mm Weight: 5.4 mg (typ.) © 2021 Toshiba Electronic Devices & Storage Corporation 15 2021-09-17 CUHZ Series RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.  TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.  This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.  Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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