DF6D5M4N
ESD Protection Diodes
Silicon Epitaxial Planar
DF6D5M4N
1. General
The DF6D5M4N is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device
interfaces and other applications to protect against static electricity and noise.
Utilizing snapback characteristics, the DF6D5M4N provides low dynamic resistance and superior protective
performance. Furthermore, the DF6D5M4N is a multibit device with a flow-through type design that is easy for
board layout and mounting.
2. Applications
Mobile Equipment
� Smartphones
� Tablets
� Notebook PCs
Desktop PCs
Note:
This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
3. Features
(1)
Suitable for use with a 3.3 V signal line. (VRWM ≤ 3.6 V)
(2)
Protects devices with its high ESD performance.
(VESD = ±20 kV (Contact / Air) @IEC61000-4-2)
(3)
Low dynamic resistance protects semiconductor devices from static electricity and noise.
(RDYN = 0.8 Ω (typ.))
(4)
Snapback characteristics realizing low clamping voltage protects semiconductor devices.
(VC = 10 V@IPP = 2 A (typ.))
(5)
The DF6D5M4N is a multibit device with a flow-through type.
(1.25 mm × 1.0 mm size (Nickname: DFN6))
4. Packaging
DFN6
Start of commercial production
2022-03
©2016-2022
Toshiba Electronic Devices & Storage Corporation
1
2022-01-26
Rev.3.0
DF6D5M4N
5. Example of Circuit Diagram
6. Quick Reference Data
Characteristics
Working peak reverse voltage
Total capacitance
Symbol
Note
VRWM
(Note 1)
Ct
Test Condition
Min
Typ.
Max
Unit
�
�
�
3.6
V
VR = 0 V, f = 1 MHz
�
0.2
0.3
pF
Dynamic resistance
RDYN
(Note 2)
�
�
0.8
�
Ω
Electrostatic discharge voltage
(IEC61000-4-2) (Contact)
VESD
(Note 3)
�
�
�
20
kV
Note 1: Recommended operating condition.
Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A.
Note 3: Criterion: No damage to devices.
©2016-2022
Toshiba Electronic Devices & Storage Corporation
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2022-01-26
Rev.3.0
DF6D5M4N
6.1. ESD Clamp Waveform (Note)
Fig. 6.1.1
+8 kV
Fig. 6.1.2
-8 kV
Fig. 6.1.3
+15 kV
Fig. 6.1.4
-15 kV
Fig. 6.1.5
Note:
IEC61000-4-2 (Contact)
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016-2022
Toshiba Electronic Devices & Storage Corporation
3
2022-01-26
Rev.3.0
DF6D5M4N
6.2. TLP Characteristics (Note)
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
6.3. Clamp Voltage - Peak Pulse Current (V C - I PP ) (Note)
Fig. 6.3.1
V C - I PP
Fig. 6.3.2
Based on IEC61000-4-5 8/20 µs
pulse.
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016-2022
Toshiba Electronic Devices & Storage Corporation
4
2022-01-26
Rev.3.0
DF6D5M4N
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 �)
Characteristics
Symbol
Note
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2) (Contact)
VESD
(Note 1)
±20
kV
Electrostatic discharge voltage (IEC61000-4-2) (Air)
±20
Peak pulse power (tp = 8/20 µs)
PPK
Peak pulse current (tp = 8/20 µs)
IPP
30
W
2
A
(Note 2)
Junction temperature
Tj
150
�
Storage temperature
Tstg
-55 to 150
�
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
8. Electrical Characteristics (Unless otherwise specified, T a = 25 �)
VRWM: Working peak reverse voltage
VBR: Reverse breakdown voltage
IBR: Reverse breakdown current
IR: Reverse current
VC: Clamp voltage
IPP: Peak pulse current
RDYN: Dynamic resistance
Fig. 8.1
Characteristics
Working peak reverse voltage
Total capacitance
Definitions of Electrical Characteristics
Symbol
Note
VRWM
(Note 1)
Ct
Dynamic resistance
RDYN
Reverse breakdown voltage
VBR
Reverse current
IR
Clamp voltage
VC
Test Condition
Min
�
VR = 0 V, f = 1 MHz
(Note 2)
(Note 3)
(Note 2)
�
Typ.
Max
Unit
�
�
3.6
V
�
0.2
0.3
pF
�
0.8
�
Ω
IBR = 1 mA
4.0
5.0
6.0
V
VRWM = 3.6 V
�
�
0.1
µA
IPP = 1 A
�
7.5
�
V
IPP = 2 A
�
10
15
ITLP = 16 A
�
22
�
ITLP = 30 A
�
34
�
V
Note 1: Recommended operating condition.
Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A.
Note 3: Based on IEC61000-4-5 8/20 µs pulse.
©2016-2022
Toshiba Electronic Devices & Storage Corporation
5
2022-01-26
Rev.3.0
DF6D5M4N
9. Characteristics Curves (Note)
Fig. 9.1
Note:
I-V
Fig. 9.3
Ct - VR
Fig. 9.5
S21 - f
Fig. 9.2
Fig. 9.4
IR - VR
Ct - f
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016-2022
Toshiba Electronic Devices & Storage Corporation
6
2022-01-26
Rev.3.0
DF6D5M4N
10. Internal Circuit
1: GND
2: I/O 1
3: I/O 2
4: N.C.
5: N.C.
6: N.C.
11. Equivalent Circuit (Top view)
12. Marking (Top view)
13. Land Pattern Dimensions (for reference only)
Unit: mm
©2016-2022
Toshiba Electronic Devices & Storage Corporation
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2022-01-26
Rev.3.0
DF6D5M4N
Package Dimensions
Unit: mm
Weight: 0.0017 g (typ.)
Package Name(s)
Nickname: DFN6
©2016-2022
Toshiba Electronic Devices & Storage Corporation
8
2022-01-26
Rev.3.0
DF6D5M4N
RESTRICTIONS ON PRODUCT USE
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
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