GT15J311_06

GT15J311_06

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    GT15J311_06 - HIGH POWER SWITCHING APPLICATIONS - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
GT15J311_06 数据手册
GT15J311,GT15J311(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311, GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed Low saturation voltage : tf = 0.30μs (Max.) (IC = 15A) : VCE (sat) = 2.7V (Max.) (IC = 15A) Unit: mm FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Emitter−Collector Forward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 600 ±20 15 30 15 30 70 150 −55~150 UNIT V V A A A A W °C °C JEDEC JEITA TOSHIBA Weight: 1.5 g (typ.) ⎯ ⎯ 2-10S1C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Marking 15J311 Part No. (or abbreviation code) JEDEC Lot No. ⎯ ⎯ 2-10S2C JEITA A line indicates lead (Pb)-free package or lead (Pb)-free finish. TOSHIBA Weight: 1.4 g (typ.) 1 2006-10-31 GT15J311,GT15J311(SM) Electrical Characteristics (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Collector Cut−Off Current Gate-Emitter Cut-Off Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Switching Time Turn−On Time Fall Time Turn−Off Time Peak Forward Voltage Reverse Recovery Time Thermal Resistance (IGBT) Thermal Resistance (Diode) SYMBOL IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j−c) Rth (j−c) IF = 15A, VGE = 0 IF = 15A, di / dt = −100A / μs ― ― TEST CONDITION VGE=±20V, VCE = 0 VCE = 600V, VGE = 0 IC = 1.5mA, VCE = 5V IC = 15A, VGE = 15V VCE = 20V, VGE = 0, f = 1MHz Inductive Load VCC = 300V, IC = 15A VGG = ±15V, RG = 75Ω MIN ― ― 5.0 ― ― ― ― (Note 1) ― ― ― ― ― ― TYP. ― ― ― 2.1 950 0.12 0.40 0.15 0.50 ― ― ― ― MAX ±500 1.0 8.0 2.7 ― ― ― 0.30 ― 2.0 200 1.79 3.45 V ns °C / W °C / W μs UNIT nA mA V V pF Note 1: Switching time measurement circuit and input / output waveforms Switching loss measurement waveforms 2 2006-10-31 GT15J311,GT15J311(SM) 3 2006-10-31 GT15J311,GT15J311(SM) 4 2006-10-31 GT15J311,GT15J311(SM) 5 2006-10-31 GT15J311,GT15J311(SM) 6 2006-10-31 GT15J311,GT15J311(SM) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-10-31
GT15J311_06
### 物料型号 - 型号:GT15J311, GT15J311(SM)

### 器件简介 - 类型:第三代绝缘栅双极晶体管(IGBT),N沟道 - 应用:高功率开关应用和电机控制应用 - 特点:增强模式类型,高速开关,低饱和电压

### 引脚分配 - GATE:2号引脚 - COLLECTOR (HEAT SINK):1号引脚 - EMITTER:3号引脚

### 参数特性 - 最大集电极-发射极电压(VCES):600V - 最大栅极-发射极电压(VGES):±20V - 集电极电流(DC)(Ic):15A - 集电极峰值电流(1ms)(ICP):30A - 发射极-集电极最大正向电流(IF):15A - 最大正向峰值电流(IFM):30A - 集电极功耗(Tc= 25°C)(Pc):70W - 最大结温(Tj):150℃ - 存储温度范围(Tstg):-55~150°C

### 功能详解 - 开关时间:上升时间(tr) 0.12us至0.30us,下降时间(tf) 0.15us至0.30us - 开通时间(ton):0.40us - 关断时间(toff):0.50us - 正向峰值电压(VF):2.0V - 反向恢复时间(trr):200ns - 热阻(IGBT)(Rth (j-c)):1.79°C/W - 热阻(Diode)(Rth (j-c)):3.45°C/W

### 应用信息 - 应用领域:适用于需要高功率开关和电机控制的场合。

### 封装信息 - 重量(GT15J311):1.5g(典型值) - 重量(GT15J311(SM)):1.4g(典型值)
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