GT30J101

GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 30 60 155 150 −55~150 Unit V V A W °C °C JEDEC JEITA TOSHIBA Weight: 4.6 g ― ― 2-16C1C 1 2002-01-18 GT30J101 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c)  Test Condition VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 3 mA, VCE = 5 V IC = 30 A, VGE = 15 V VCE = 20 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 30 A VGG = ±15 V, RG = 43 Ω (Note1) Min   5.0   Typ.    2.1 2200 0.12 0.40 0.15 0.70  Max ±500 1.0 8.0 2.7  Unit nA mA V V pF        0.30 µs  0.81 °C/W Note1: Switching time measurement circuit and input/output waveforms VGE GT30J301 −VGE IC RG L VCC VCE 0 IC 90% VCE 10% td (off) tf toff ton 10% 10% td (on) tr 90% 10% 0 90% 10% Note2: Switching loss measurement waveforms VGE 0 90% 10% IC 0 VCE 10% Eoff Eon 2 2002-01-18 GT30J101 IC – VCE 100 Common emitter Tc = 25°C 20 Common emitter Tc = −40°C VCE – VGE (V) 80 (A) IC 20 15 60 13 Collector-emitter voltage VCE 16 12 Collector current 12 40 8 60 4 20 30 IC = 1 0 A 0 0 4 8 12 16 20 20 VGE = 10 V 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE – VGE 20 Common emitter Tc = 25°C 20 Common emitter Tc = 125°C VCE – VGE (V) Collector-emitter voltage VCE 16 12 (V) Collector-emitter voltage VCE 16 12 8 60 30 8 20 4 IC = 1 0 A 30 60 4 20 IC = 1 0 A 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC – VGE 100 Common emitter VCE = 5 V 4 Common emitter VGE = 15 V 3 VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 80 60 50 40 30 IC 60 Collector current (A) 2 20 10 40 20 Tc = 125°C 0 0 25 −40 12 16 20 1 IC = 5 A 4 8 0 −60 −20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (°C) 3 2002-01-18 GT30J101 Switching time ton, tr – RG 3 10 Switching time ton, tr – IC Common emitter VCC = 300 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C (µs) 1 0.5 0.3 tr Common emitter 0.1 0.05 0.03 3 VCC = 300 V VGG = ±15 V IC = 3 0 A : Tc = 25°C : Tc = 125°C 10 30 100 300 1000 (µs) ton 3 ton, tr ton, tr 1 0.5 0.3 ton Switching time Switching time 0.1 0.05 0.03 tr 0.01 0 5 10 15 20 25 30 Gate resistance RG (Ω) Collector current IC (A) Switching time toff, tf – RG 3 Common emitter VCC = 300 V VGG = ±15 V IC = 3 0 A : Tc = 25°C : Tc = 125°C 10 5 3 Switching time toff, tf – IC Common emitter VCC = 300 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C (µs) 1 0.5 0.3 (µs) toff toff toff, tf toff, tf tf 1 0.5 0.3 Switching time Switching time 0.1 0.05 0.03 0.1 tf 0.05 0.03 3 10 30 100 300 1000 0.01 0 5 10 15 20 25 30 Gate resistance RG (Ω) Collector current IC (A) Switching loss 10 Eon, Eoff – RG 10 Eon Switching loss Common emitter VCC = 300 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C Note2 Eon, Eoff – IC (mJ) 3 Eoff 1 Eon, Eoff Eon, Eoff (mJ) 3 Eon 1 0.3 Eoff Switching loss 0.3 0.1 0.03 1 Common emitter VCC = 300 V VGG = ±15 V IC = 3 0 A : Tc = 25°C : Tc = 125°C Note2 3 10 30 100 300 1000 Switching loss 0.1 0.03 0.01 0 5 10 15 20 25 30 Gate resistance RG (Ω) Collector current IC (A) 4 2002-01-18 GT30J101 C – VCE 10000 500 Common emitter VCE, VGE – QG 20 (V) Collector-emitter voltage VCE (pF) Cies 1000 16 C 300 VCE = 100 V 200 200 8 100 Common emitter VGE = 0 30 f = 1 MHz Tc = 25°C 10 0.3 1 3 10 30 100 Coes 100 4 Cres 300 1000 0 0 20 40 60 80 0 100 Collector-emitter voltage VCE (V) Gate charge QG (nC) Safe operating area 100 IC max (pulsed)* 50 IC max (continuous) 30 10 5 3 *: Single nonrepetitive pulse Tc = 25°C 0.5 Curves must be derated 0.3 1 linearly with increase in temperature. 3 10 30 100 300 1000 3000 DC operation 10 ms* 100 100 µs* 50 µs* 50 30 Reverse bias SOA (A) (A) IC IC 1 ms* 10 5 3 Collector current Collector current 1 0.5 0.3 Tj < 125°C = VGE = ±15 V RG = 43 Ω 0.1 1 3 10 30 100 300 1000 3000 0.1 1 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 10 2 Rth (t) – tw Transient thermal impedance Rth (t) (°C/W) 10 1 10 0 10 −1 −2 −3 Tc = 25°C 10 10 10 −4 10 −5 10 −4 10 −3 10 −2 10 −1 10 0 10 1 10 2 Pulse width tw (s) 5 2002-01-18 Gate-emitter voltage 300 300 12 Capacitance VGE (V) 3000 RL = 10 Ω 400 Tc = 25°C GT30J101 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 6 2002-01-18