GT30N135SRA,S1E(S

GT30N135SRA Discrete IGBTs Silicon N-Channel IGBT GT30N135SRA 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications • Dedicated to Soft Switching Applications • Dedicated to Induction Cooktops and Home Appliance Applications Note: The product(s) described herein should not be used for any other application. Note 1: This transistor is sensitive to electrostatic discharge and should be handled with care. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: (5) Low saturation voltage: VCE(sat) = 1.65 V (typ.) (IC = 30 A, Ta = 25 �) (6) High junction temperature: Tj = 175 � (max) IGBT tf = 0.25 µs (typ.) (IC = 60 A) 3. Packaging and Internal Circuit 1: Gate 2: Collector(Heatsink) 3: Emitter TO-247 Start of commercial production 2021-07 ©2021 Toshiba Electronic Devices & Storage Corporation 1 2021-04-28 Rev.1.0 GT30N135SRA 4. Absolute Maximum Ratings (Note) (T a = 25 �, unless otherwise specified) Characteristics Collector-emitter voltage (Note 2) Gate-emitter voltage Collector current (DC) (Tc = 25 �) Collector current (DC) (Tc = 100 �) (Note 1) Diode forward current (DC) (Tc = 25 �) Diode forward current (DC) (Tc = 100 �) (Tc = 25 �) Junction temperature Unit VCES 1350 V VGES ±25 V IC 60 A ICP 120 A ICSM 260 A IF 60 A 30 Diode forward current (100 µs) Collector power dissipation Rating 30 Collector current (1 ms) Non-repetitive peak collector current Symbol 120 A PC 348 W Tj 175 � Storage temperature Tstg -55 to 175 � Mounting torque TOR 0.8 N�m Note: (Note 2) IFP Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT. Note 1: The maximum value of the capacitor charging current limited on Tj < 175 � and t < 3 µs Note 2: To perform derating ensures the device reliability. In operation, the collector emitter voltage(VCES) should be below 1150 V, as well as junction temperature(Tj) should be below 140 �. 5. Thermal Characteristics Characteristics Junction-to-case thermal resistance ©2021 Toshiba Electronic Devices & Storage Corporation 2 Symbol Max Unit Rth(j-c) 0.43 �/W 2021-04-28 Rev.1.0 GT30N135SRA 6. Electrical Characteristics 6.1. Static Characteristics (T a = 25 �, unless otherwise specified) Characteristics Gate leakage current Collector cut-off current Symbol Test Condition IGES VGE = ±25 V, VCE = 0 V ICES VCE = 1350 V, VGE = 0 V Min Typ. Max Unit � � ±100 nA � � 100 µA V(BR)CES IC = 0.5 mA, VGE = 0 V 1350 � � V Gate-emitter cut-off voltage VGE(OFF) IC = 60 mA, VCE = 5 V 5.3 � 7.3 V Collector-emitter saturation voltage VCE(sat)(1) IC = 30 A, VGE = 15 V (pulse test) � 1.65 1.95 V VCE(sat)(2) IC = 30 A, VGE = 15 V, Tc = 125 � (pulse test) � 1.90 � VCE(sat)(3) IC = 60 A, VGE = 15 V (pulse test) � 2.15 2.60 VCE(sat)(4) IC = 60 A, VGE = 15 V, Tc = 125 � (pulse test) � 2.60 � VF(1) IF = 30 A, VGE = 0 V (pulse test) � 1.75 2.40 VF(2) IF = 30 A, VGE = 0 V, Tc = 125 � (pulse test) � 1.85 � Collector-emitter breakdown voltage Diode forward voltage ©2021 Toshiba Electronic Devices & Storage Corporation 3 V 2021-04-28 Rev.1.0 GT30N135SRA 6.2. Dynamic Characteristics (T a = 25 �, unless otherwise specified) Characteristics Symbol Input capacitance Cies Reverse transfer capacitance Cres Output capacitance Coes Test Condition VCE = 25 V, VGE = 0 V, f = 100 kHz Min Typ. Max Unit � 3700 � pF � 40 � � 55 � Qg VCE = 600 V, IC = 60 A, VGE = 15 V � 270 � nC Switching time (rise time) tr � 0.14 � µs Switching time (turn-on time) ton Resistive load VCE = 600 V, IC = 60 A, VGE = +15 V, RG = 10 Ω See Fig. 6.2.1, 6.2.2 � 0.21 � � 0.25 0.35 Total gate charge Switching time (fall time) Switching time (turn-off time) Switching loss (turn-off switching loss) tf � 0.50 � Eoff(1) toff Inductive load VCE = 300 V, IC = 60 A, VGE = +15 V, RG = 39 Ω L = 30 µH, C = 0.33 µF See Fig. 6.2.3, 6.2.4 � 0.80 � Eoff(2) Inductive load VCE = 300 V, IC = 60 A, VGE = +15 V, RG = 39 Ω, L = 30 µH, C = 0.33 µF Tc = 125 � See Fig. 6.2.3, 6.2.4 � 1.30 � mJ Fig. 6.2.1 Test Circuit of Switching Time Fig. 6.2.2 Timing Chart of Switching Time Fig. 6.2.3 Test Circuit of Switching Loss Fig. 6.2.4 Timing Chart of Switching Loss ©2021 Toshiba Electronic Devices & Storage Corporation 4 2021-04-28 Rev.1.0 GT30N135SRA 7. Marking (Note) Fig. 7.1 Note: Marking A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ©2021 Toshiba Electronic Devices & Storage Corporation 5 2021-04-28 Rev.1.0 GT30N135SRA 8. Characteristics Curves (Note) Fig. 8.1 I C - V CE Fig. 8.2 I C - V CE Fig. 8.3 I C - V CE Fig. 8.4 I C - V CE V CE(sat) - T c Fig. 8.6 I C - V GE Fig. 8.5 ©2021 Toshiba Electronic Devices & Storage Corporation 6 2021-04-28 Rev.1.0 GT30N135SRA Fig. 8.7 V GE - Q g Fig. 8.8 Fig. 8.9 r th(j-c) - t w (Guaranteed Maximum) Fig. 8.11 Fig. 8.10 Safe Operating Area (Guaranteed Maximum) IF - VF ©2021 Toshiba Electronic Devices & Storage Corporation C -V CE Fig. 8.12 7 VF - Tc 2021-04-28 Rev.1.0 GT30N135SRA Note: Fig. 8.13 PC - Tc Fig. 8.14 E off - V CE Fig. 8.15 E off - I C Fig. 8.16 E off - R G Fig. 8.17 E off - T c The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2021 Toshiba Electronic Devices & Storage Corporation 8 2021-04-28 Rev.1.0 GT30N135SRA Package Dimensions Unit: mm Weight: 6.15 g (typ.) Package Name(s) TOSHIBA: 2-16L1A Nickname: TO-247 ©2021 Toshiba Electronic Devices & Storage Corporation 9 2021-04-28 Rev.1.0 GT30N135SRA RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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