GT5G131_06

GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm • • • • • 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode Peak collector current: IC = 130 A (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms (Note 1) Symbol VCES VGES VGES IC ICP PC Tj Tstg Rating 400 ±6 ±8 5 130 1.1 150 −55~150 2 Unit V V Collector current Collector power dissipation Junction temperature Storage temperature range A W °C °C JEDEC JEITA TOSHIBA ― ― 2-6J1C Note 1: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t] Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Weight: 0.080 g (typ.) Equivalent Circuit 8 7 6 5 1 2 3 4 These devices are MOS type. Users should follow proper ESD handling procedures. Operating condition of turn-off dv/dt should be lower than 400 V/μs. 1 2006-11-02 GT5G131 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance (Note 2) tf toff Rth (j-a) 2 Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Test Condition VGE = ±6 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 130 A, VGE = 3 V VCE = 10 V, VGE = 0, f = 1 MHz 3V 0 2.3 Ω 30 Ω Min ⎯ ⎯ 0.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 2.2 2800 1.3 1.4 1.5 1.8 ⎯ Max ±10 10 1.0 7.0 ⎯ Unit μA μA V V pF ⎯ ⎯ ⎯ 300 V ⎯ ⎯ ⎯ ⎯ μs ⎯ VIN: tr < 100 ns = tf < 100 ns = Duty cycle < 1% = ⎯ ⎯ 114 °C/W Note 2: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t] Marking GT5G131 ※ Type Lot No. ● on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2006-11-02 GT5G131 IC – VCE 200 3.0 160 160 3.5 200 IC – VCE 3.0 (A) (A) 3.5 2.5 Collector current IC 120 Collector current IC 2.5 120 80 VGE = 2.0 V 80 VGE = 2.0 V 40 Common emitter Tc = −40°C 0 0 1 2 3 4 5 40 Common emitter Tc = 25°C 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC – VCE 200 200 IC – VCE (A) (A) 160 3.5 3.0 3.5 160 3.0 120 2.5 80 VGE = 2.0 V 40 Common emitter Tc = 125°C 0 0 1 2 3 4 5 Collector current IC 120 2.5 80 VGE = 2.0 V 40 Common emitter Tc = 70°C 0 0 1 2 3 4 5 Collector current IC Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC – VGE 200 3 VCE (sat) – Tc IC = 130 A 2.5 100 70 1.5 40 1 0.5 Common emitter VGE = 3 V 0 −80 −40 0 40 80 120 160 (A) 160 25 70 Collector-emitter saturation voltage VCE (sat) (V) 5 Collector current IC 2 120 Tc = −40°C 125 80 40 Common emitter VCE = 5 V 0 0 1 2 3 4 Gate-emitter voltage VGE (V) Case temperature Tc (°C) 3 2006-11-02 GT5G131 VCE – VGE 5 5 VCE – VGE VCE (V) Common emitter Tc = −40°C Common emitter Tc = 25°C 4 IC = 130 A 3 70 2 100 VCE (V) 4 IC = 130 A 3 70 2 Collector-emitter voltage 100 1 40 Collector-emitter voltage 1 40 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VCE – VGE 5 5 VCE – VGE VCE (V) Common emitter Tc = 70°C Common emitter Tc = 125°C 4 VCE (V) 4 IC = 130 A 3 100 Collector-emitter voltage Collector-emitter voltage 70 3 70 100 IC = 130 A 2 2 1 40 1 40 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VGE (OFF) – Tc (V) 1.4 Common emitter 1.2 VCE = 5 V IC = 1 m A 10000 C – VCE Gate-emitter cut-off voltage VGE (OFF) Cies 1 0.8 0.6 (pF) Capacitance C 1000 100 Cres Coes Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 10 100 1000 0.4 0.2 0 −80 −40 0 40 80 120 160 10 1 Case temperature Tc (°C) Collector-emitter voltage VCE (V) 4 2006-11-02 GT5G131 Switching Time – RG 10 500 VCE, VGE – QG 10 VCE (V) toff ton 400 8 Switching time (μs) Collector-emitter voltage tf 1 tr Common emitter VCE = 300 V VGE = 3 V IC = 130 A Tc = 25°C 0.1 1 10 100 1000 200 VGE Common emitter 100 VCE 0 0 20 40 VCC = 300 V RL = 2.3 Ω Tc = 25°C 60 4 2 0 80 Gate resistance RG (Ω) Gate charge QG (nC) Switching Time – ICP 10 800 Maximum Operating Area Main capacitance CM (μF) Switching time (μs) toff tf 1 ton 600 400 Common emitter tr VCC = 300 V VGE = 3 V RG = 30 Ω Tc = 25°C 100 150 200 VCM = 350 V 200 Tc < 70°C = VGE = 4 V 10 Ω < RG < 300 Ω = = 0 0 40 80 120 160 200 0.1 0 50 Collector current IC (A) Peak collector current ICP (A) Minimum Gate Drive Area 200 ICP (A) 160 Peak collector current 120 Tc = 25°C 70 80 40 0 0 2 4 6 8 Gate-emitter voltage VGE (V) 5 2006-11-02 Gate-emitter voltage 300 6 VGE (V) GT5G131 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-02