GT60J323

GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • • • • • • Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ±25 33 60 120 30 120 68 170 150 −55 to 150 Unit V V A A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2C Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.74 1.56 Unit °C/W °C/W Equivalent Circuit Collector Marking Part No. (or abbreviation code) TOSHIBA Gate Emitter GT60J323 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT60J323 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 30 A, VGE = 0 IF = 30 A, di/dt = −100 A/μs Test Condition VGE = ±25 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 300 V, IC = 60 A VGG = ±15 V, RG = 30 Ω (Note 1) Min ― ― 3.0 ― ― ― ― ― ― ― ― Typ. ― ― ― 1.9 4800 0.17 0.23 0.16 0.41 1.4 0.1 Max ±500 1.0 6.0 2.5 ― ― ― 0.26 ― 2.0 0.2 V µs μs Unit nA mA V V pF Note 1: Switching time measurement circuit and input/output waveforms VGE 0 RG 0 VCC 0 VCE td (off) RL IC 90% 90% 10% 90% 10% tf toff 10% tr ton 2 2006-11-01 GT60J323 IC – VCE 120 Common emitter Tc = −40°C 100 15 120 Common emitter Tc = 25°C 100 IC – VCE 15 20 80 10 8 7 (A) 20 80 8 7 Collector current IC Collector current IC (A) 60 40 10 60 40 20 VGE = 6 V VGE = 6 V 20 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC – VCE 120 Common emitter Tc = 125°C 100 20 10 120 Common emitter VCE = 5 V IC – VGE (A) Collector current IC 15 7 60 Collector current IC 80 (A) 80 60 VGE = 6 V 40 8 100 40 25 −40 Tc = 125°C 20 20 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE (sat) – Tc 3.2 IC = 120 A 2.4 80 Collector-emitter saturation voltage VCE (sat) (V) 60 1.6 30 10 0.8 Common emitter VGE = 15 V 0.0 −60 −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT60J323 VCE, VGE – QG 400 Common emitter RL = 5 Ω Tc = 25°C 20 30000 10000 C – VCE VCE (V) VGE (V) Collector-emitter voltage Capacitance C (pF) 300 15 5000 3000 1000 500 300 100 50 30 10 0.0 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 1 10 Cies 200 VCE = 300 V 100 10 Gate-emitter voltage Coes 100 5 200 Cres 0 0 80 160 240 0 320 100 1000 Gate charge QG (nC) Collector-emitter voltage VCE (V) Switching Time – RG Common emitter 3V CC = 300 V IC = 6 0 A VGG = ±15 V 1 Tc = 25°C 0.5 0.3 5 10 5 toff ton 3 Switching Time – IC Common emitter VCC = 300 V RG = 30 Ω VGG = ±15 V Tc = 25°C toff tf 0.1 t on 0.05 0.03 tr Switching time (μs) Switching time (μs) tr tf 1 0.5 0.3 0.1 0.05 0.03 0.01 0 10 100 1000 0.01 0 10 20 30 40 50 60 70 Gate resistance RG (Ω) Collector current IC (A) Safe Operating Area 3000 1000 500 300 IC max (pulsed) * 100 50 30 IC max (continuous) Reverse Bias SOA 3000 Tj ≤ 125°C VGG = 20 V RG = 10 Ω *: Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. 1000 500 300 100 50 30 10 5 3 1 1 (A) Collector current IC 10 ms* 1 m s* 10 μs* 100 μs* 10 5 DC operation 3 1 1 Collector current IC (A) 10 100 1000 10000 10 100 1000 10000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 4 2006-11-01 GT60J323 ICmax – Tc Maximum DC collector current ICmax (A) Common emitter VGE = 15 V Transient thermal impedance rth (t) (°C/W) 70 60 50 40 30 20 10 0 25 103 2 rth (t) – tw Tc = 25°C 10 101 Diode stage 100 IGBT stage 1 0 −1 1 0 −2 10−3 10−5 1 0 −4 10−3 10−2 10−1 100 101 102 50 75 100 125 150 Case temperature Tc (°C) Pulse width tw (s) IF – V F 100 50 Irr, trr – IF 500 300 Irr (A) Common emitter VGE = 0 80 (A) Peak reverse recovery current Forward current IF 60 10 trr 5 3 Irr 100 40 25 Tc = 125°C −40 0 0 0.4 0.8 1.2 1.6 2.0 50 30 Common emitter di/dt = −100 A/μs VGE = 0 Tc = 25°C 10 15 20 25 10 30 20 1 0 5 Forward voltage VF (V) Forward current IF (A) Cj – V R 1000 500 f = 1 MHz Irr, trr – di/dt (A) 200 10 Common emitter IF = 30 A Tc = 25°C 8 trr Tc = 25°C Cj (pF) trr Reverse recovery time Junction capacitance 100 50 30 Peak reverse recovery current Irr 300 (ns) 6 100 4 Irr 10 5 3 1 3 5 10 30 50 100 300 500 2 0 0 0 40 80 120 160 200 Reverse voltage VR (V) di/dt (A/μs) 5 2006-11-01 Reverse recovery time trr (ns) 30 GT60J323 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01