GT8G132

GT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G132 Strobe Flash Applications Unit: mm • • • • • Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms (Note 1) Symbol VCES VGES VGES IC ICP PC Tj Tstg Rating 400 ±6 ±8 8 150 1.1 150 −55~150 2 Unit V V Collector current Collector power dissipation Junction temperature Storage temperature range A W °C °C JEDEC JEITA TOSHIBA ― ― 2-6J1C Note 1: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t] Weight: 0.080 g (typ.) Equivalent Circuit 8 7 6 5 1 2 3 4 These devices are MOS type. Users should follow proper ESD handling procedures. Operating condition of turn-off dv/dt should be lower than 400 V/µs. 1 2002-05-17 GT8G132 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance (Note 2) tf toff Rth (j-a) 2 Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Test Condition VGE = ±6 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 150 A, VGE = 4 V VCE = 10 V, VGE = 0, f = 1 MHz 4V 0 2.0 Ω 51 Ω Min   0.6   Typ.    2.3 2800 1.0 1.1 1.6 2.2  Max ±10 10 1.2 7.0  Unit µA µA V V pF        µs  VIN: tr < 100 ns = tf < 100 ns = Duty cycle < 1% =  300 V  114 °C/W Note 2: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t] Marking GT8G132 ※ Type ※ Lot Number Month (Starting from Alphabet A) Year (Last Number of the Christian Era) 2 2002-05-17 GT8G132 IC – VCE 200 4.0 160 4.5 5.0 120 3.5 VGE = 2.5 V 3.0 160 5.0 120 4.5 200 IC – VCE 4.0 3.5 3.0 (A) IC Collector current Collector current IC (A) VGE = 2.5 V 80 80 40 Common emitter Tc = −40°C 0 0 1 2 3 4 5 40 Common emitter Tc = 25°C 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC – VCE 200 4.0 160 5.0 120 4.5 3.0 3.5 160 5.0 120 VGE = 2.5 V 80 200 IC – VCE 4.0 4.5 3.0 3.5 (A) IC Collector current Collector current IC (A) 80 VGE = 2.5 V 40 Common emitter Tc = 70°C 0 0 1 2 3 4 5 40 Common emitter Tc = 125°C 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC – VGE 200 3 25 70 VCE (sat) – Tc IC = 150 A 2.5 120 2 90 1.5 60 (A) 160 Tc = 40°C 120 125 80 Collector-emitter saturation voltage VCE (sat) (V) Collector current IC 1 0.5 Common emitter VGE = 4 V −40 0 40 80 120 160 40 Common emitter VCE = 5 V 0 0 1 2 3 4 5 0 −80 Gate-emitter voltage VGE (V) Case temperature Tc (°C) 3 2002-05-17 GT8G132 VCE – VGE 5 5 VCE – VGE (V) Common emitter Tc = 25°C 4 IC = 150 A (V) Common emitter Tc = −40°C 4 IC = 150 A Collector-emitter voltage VCE Collector-emitter voltage VCE 120 3 3 90 2 120 90 2 1 60 60 1 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VCE – VGE 5 5 VCE – VGE (V) Common emitter Tc = 125°C 4 IC = 150 A (V) Common emitter Tc = 70°C 4 IC = 150 A Collector-emitter voltage VCE Collector-emitter voltage VCE 120 3 90 2 3 90 2 60 1 120 1 60 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VGE (OFF) – Tc Gate-emitter cut-off voltage VGE (OFF) (V) 1.4 1.2 Common emitter VCE = 5 V IC = 1 mA 10000 C – VCE Cies 1 0.8 0.6 (pF) Capacitance C 1000 100 Cres Coes Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 10 100 1000 0.4 0.2 0 −80 −40 0 40 80 120 160 10 1 Case temperature Tc (°C) Collector-emitter voltage VCE (V) 4 2002-05-17 GT8G132 Switching Time – RG 10 500 VCE, VGE – QG 10 (V) toff 400 8 Collector-emitter voltage VCE tf ton Switching time 1 200 VGE 4 tr Common emitter VCE = 300 V VGE = 4 V IC = 150 A Tc = 25°C 100 VCE 0 0 20 40 Common emitter VCC = 300 V RL = 2.0 Ω Tc = 25°C 60 2 0.1 1 10 100 1000 0 80 Gate resistance RG (Ω) Gate charge QG (nC) Switching Time – ICP 10 800 Maximum Operating Area toff (µF) 600 (µs) tf 1 Main capacitance CM Switching time ton 400 Common emitter tr VCC = 300 V VGE = 4 V RG = 51 Ω Tc = 25°C 100 150 200 200 VCM = 350 V < Tc = 70°C VGE = 4.0 V 10 Ω < RG < 300 Ω = = 0.1 0 50 0 0 40 80 120 160 200 Collector current IC (A) Peak collector current ICP (A) Minimum Gate Drive Area 200 ICP (A) 160 Peak collector current Tc = 25°C 120 70 80 40 0 0 2 4 6 8 Gate-emitter voltage VGE (V) 5 2002-05-17 Gate-emitter voltage 300 6 VGE (µs) (V) GT8G132 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 6 2002-05-17