HN1A02F

HN1A02F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A02F Audio Frequency Power Amplifier Applications Switching applications High hFE : hFE(1) = 120~400 Low VCE(sat.) : VCE (sat) = −0.2 V (max.) (IC = −400 mA, IB = −8 mA) Small Power Motor Driver Application. Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC* Tj Tstg Rating −15 −15 −5 −800 −160 300 150 −55~150 Unit V V V mA mA mW °C °C 1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1 (E1) (B1) (C2) (E2) (B2) (C1) JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high EIAJ ― temperature/current/voltage and the significant change in TOSHIBA 2-3N1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating Weight: 0.015mg(typ) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating. Power dissipation per element should not exceed 200mW. Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteristic Collector cut-off current Emitter cut-off current Collector-Emitter Brakedown Voltage DC current gain Collector-emitter saturation voltage Base-Emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE (sat) VBE fT Cob ― ― ― ― Test Circuit ― ― Test Condition VCB = −15V, IE = 0 VEB = −5V, IC = 0 IC = −10mA,IB= 0 VCE = −1V, IC = −100mA VCE = −1V, IC = −800mA IC = −400mA, IB = −8mA VCE = −5V, IC = −10mA VCE = −5V, IC = −10mA VCB = −10V, IE = 0, f = 1MHz Min ― ― −15 120 40 ― −0.5 ― ― Typ. ― ― ― ― ― ― ― 120 13 Max −100 −100 ― 400 ― −0.2 −0.8 ― ― V V MHz pF Unit nA nA V Note: hFE Classification Y (Y): 120~240, GR (G): 200~400 ( ) Marking Symbol Marking Equivalent Circuit (Top View) 26 1 2007-11-22 HN1A02F (Q1,Q2 Common) IC – VCE −1000 hFE – IC Emitter common 2000 Emitter common −6 Ta = 25°C −4 (mA) COLLECTOR CURRENT IC hFE −800 −5 1000 500 300 25 −25 100 50 30 Ta = 100°C VCE = −1 V −600 −3 −2 E −400 IB = −1 mA −200 0 0 0 −2 −4 −6 −8 −10 −12 CURRENT GAIN 10 −1 −3 −10 −30 −100 −300 −1000 COLLECTOR-EMITTER VOLTAGE (V) VCE COLLECTOR CURRENT IC (mA) IC – VBE COLLECTOR-EMITTERSATURATION VOTAGE VCE (sat) (V) VCE (sat) – IC (mA) −2 Emitter common −1 −0.5 −0.3 IC/IB = 50 −800 Emitter common VCE = −1 V −600 COLLECTOR CURRENT IC Ta = 100°C −400 25 −25 −0.1 −0.05 −0.03 Ta = 100°C 25 −25 −3 −10 −30 −100 −300 −1000 −200 −0.01 −1 COLLECTOR CURRENT IC (mA) 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 BASE-EMITTER VOLTAGE VBE (V) PC* – Ta COLLECTOR POWER DISSPATION PC (mW) 500 400 300 200 100 0 0 25 50 75 100 125 150 175 ANBIENT TEMPERATURE Ta *Total Rating. (°C) 2 2007-11-22 HN1A02F RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2007-11-22